A theoretical study, within the effective-mass approximation, on the coupling effects of applied magnetic fields along the growth direction of the superlattice on the surface electron states in a semi-infinite semiconductor superlattice is presented by using an effective-barrier height method.
By studying surface electron states of the semi-infinite superconductor in the tight-binding approximation, two branches of surface states are obtained, one of which is unique to the superconducting state.
The correlation of the superior catalytic properties of the Co B/SiO 2 catalyst to its amorphous structure and surface electronic state was discussed briefly based on the kinetic studies and various characterizations,including ICP,DSC,SEM,XPS,XRD.
The relationship between the structure, surface electronic state of the amorphous alloy and the catalytic performance was systematically studied based on a series of characterization of catalysts, together with the kinetic studies.
According to the results of ICP, XRD, XPS, BET and SEM, the promoting effect of ultrasonic wave was discussed briefly by considering the surface electronic state, surface area, particle shape and size, pore size and pore volume of the Raney Ni catalyst.
Recent experimental studies confirm that such electron energy losses measured from various semiconductor surfaces are indeed representative of many improtant parameters associated with surface atomic and electronic structures, including band gap, distribution of surface electronic states, behavior of surface optical phonons, bonding configurations of surface atoms, products of surface reactions, etc.
Based on the comparison between the activity of the amorphous Ru B/SiO 2 catalyst and that of either the corresponding crystalline Ru B/SiO 2 or the Ru/SiO 2, the promoting effect of the amorphous structure and the surface electronic characteristics of the catalyst on its activity was discussed briefly according to the characterization results of ICP, XRD, DSC, SEM, XPS and hydrogen chemisorption.
According to various characterizations, such as EDX, BET, XRD, TEM, XPS etc. , it was found that, besides the modification on the surface electronic characteristics, the introduction of the SO42- -dopant into the TiO2 network could considerably increase the pore volume, the BET surface area, and the crystallizing degree of the anatase phase of the TiO2 photocatalyst. These factors could possibly account for the promoting effect of the SO42- -dopant on the activity of the TiO2 photocatalyst.
It is found that both surfaces are characterized by surface electron states with spectra exhibiting clearly defined singularities, namely, relatively narrow maxima and minima of the density of states in the energy range of ?1 eV.
It is shown that, on the boundary of a semiconductor, surface electron states (waves) may arise whose dispersion laws are obtained under the conditions when conduction electrons are located either in or outside the field of the acoustic wave.
The influence of the parameters of surface electron states, the nonferroelectric surface layer, and screening by free carriers on the period is described.
The linewidths (inverse lifetimes) Γe-e of Be(0001) and Mg(0001) surface electronic states are calculated as the projection of the imaginary part of the self-energy operator of a quasiparticle onto the state.
Distributions for the effective density of surface electronic states in the band gap of GaAs, which are obtained from the electric-field dependence of the surface photovoltage, depend on the measurement temperature.
Aquantitative understanding of the local density of electron states(LDOS)inside the quantum corrals at different energies was obtained by solving Schrdinger wave equation. Atheoretical picture o f surface LDOS was plotted by computer.
表面电子态
surface electron states
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