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喇曼光谱测量
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  the raman spectroscopy
     In the Raman spectroscopy of YBa 2Cu 3O 7-x thin films the intensity of 0(4) vibration phonon peak(~500cm -1 ) was large much more than of 0(2)-0(3) out of phase vibration phonon peak(~340cm -1 ). This indicate that the films were grown along a axis.
     对于YBa2Cu3O7-x薄膜进行喇曼光谱测量,发现0(4)振动的声子峰(~500cm-1)强度远远大于0(2)-0(3)反相振动的声子峰(~340cm-1)强度,应用群论分析证明薄膜主要是沿a轴生长的。
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  “喇曼光谱测量”译为未确定词的双语例句
     Measurement of O_2(a~1Δ)yield of COIL singlet oxygen generator using Raman spectroscopy
     利用喇曼光谱测量氧碘激光器氧发生器的O_2(a~1Δ)产率
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     TEMPERATURE AND SPECIES CONCENTRATION MEASUREMENTS IN TURBULENT FLAMES BY LASER RAMAN SPECTROSCOPY
     紊流火焰温度和浓度的激光喇曼光谱测量
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     Research on Coherent Anti-stokes Raman Spectroscopy Measurement Technology
     相干反斯托克斯喇曼光谱测量技术
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     Measurement of chlorine utilization by spontaneous raman scattering technique
     利用喇曼光谱测量氧碘化学激光器氯气利用率的实验研究
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     The Raman spectrum of folded longitudinal acoustic phonon modes of ZnS-ZnSe strained-layer superlattice have been reported. In the region 10~90cm-1, three doublets were observed at room temperature
     本文报道室温下ZnS-ZnSe应变层超晶格的纵声学声子折叠模的喇曼光谱测量,在10~90cm~(-1)范围内得到三级双峰结构。
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  相似匹配句对
     Research on Coherent Anti-stokes Raman Spectroscopy Measurement Technology
     相干反斯托克斯光谱测量技术
短句来源
     TEMPERATURE AND SPECIES CONCENTRATION MEASUREMENTS IN TURBULENT FLAMES BY LASER RAMAN SPECTROSCOPY
     紊流火焰温度和浓度的激光光谱测量
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     LASER RAMAN SPECTROSCOPY
     激光光谱
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     THE PHOTOELECTRIC RECEIVER AND THE SYNCHRONOUS GATING SYSTEM USED IN THE RAMAN DIFFERENCE SPECTRUM MEASUREMENT
     差分光谱测量中的光电接收和同步门控系统
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     New Generation Raman Instrumentation
     新时代的光谱仪
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  the raman spectroscopy
The results obtained from the electroreflectance and secondary-neutral-mall spectra correlate with the Raman spectroscopy data.
      
According to the Raman spectroscopy data, the process of selective oxidation leads to stress relaxation in the InAs quantum dots and to the formation of amorphous arsenic at the boundary between oxidized and unoxidized regions.
      
The Raman spectroscopy data confirm that the 3C-SiC layer grows immediately on the 6H-SiC substrate without any transition layers.
      
The Raman spectroscopy method was used for structural characterization of TiO2 thin films prepared by atomic layer deposition (ALD) and pulsed laser deposition (PLD) on fused silica and single-crystal silicon and sapphire substrates.
      
The Raman spectroscopy data are comparable to those of other M@C82 endohedral compounds.
      
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Europium activated yttrium vanadate is a high efficient red emitting phosphor. Its absorption and emission characteristics have been extensively studied.In this paper,the preliminary results of the investigation of luminescence of this phosphor at high pressure were reported.The sample used in this work was a powder material, which was obtained . from Changchun Institute of Physics, Academia Sinica. The concentration of europium is 5 mole %, The hydrostatical pressure was produced by a diamond anvil cell, using...

Europium activated yttrium vanadate is a high efficient red emitting phosphor. Its absorption and emission characteristics have been extensively studied.In this paper,the preliminary results of the investigation of luminescence of this phosphor at high pressure were reported.The sample used in this work was a powder material, which was obtained . from Changchun Institute of Physics, Academia Sinica. The concentration of europium is 5 mole %, The hydrostatical pressure was produced by a diamond anvil cell, using a 4:1 mixture of methanol and ethanol as pressure transmitting medium. The pressure calibration was performed by using the ruby RI fluorescence standard given by NBS of America. The excitation source was an argon laser whose output was focused on the sample by a microscope. The fluprescenpe and Raman scattering signals were focused onto the entrance slit of a GDM-1000 double grating spectometer through a microscope and detected by a cooled RCA C31034 photomultiplier tube. The photoelectric pulses from PMT were counted and transformed into the analogical voltage by a 5C1 photon counting system and then displayed on a strip chart recorder.The luminescence spectra of YVO4:Eu excited by an Ar+ laser (A = 4880 A) were recorded at room temperature under various pressures between 0 and 130 kbar.All lines observed showed red shifting under pressure. The energy difference between two Stark levels 7F1(A2) and 7F1(E) increased and the intensities of the lines, except the line 6D2(A1) - 7F6(B2(1)),decreased with increasing pressure.The shift rates of the lines were in the range of -0.4~-1.02cm-1/kbar, except the line 6D0 (A1) -7F1 (A2) for which it was about- 0.0588cm-1/kbar. At about 71.7kbar, a sudden change occured in the luminescence spectra of YVO4:Eu. At first, two new lines appeared at about 16189 and 16279cm-1, whose intensities increased enormously with a small variation of the pressure. At the same time, the intensity of the original lines decreased rapidly and even vanished. Some changes occured also in the spectral ranges from 14000 to 14400cm-1 and from 16600 to 16900cm-1. The new lines showed also the red-shifting as the pressure was increased.It was found that when the pressure was decreased from a pressure above 71.7kbar and even reduced to one atomosphere, the spectrum showed the blue-shifting and the intensities of the lines increased, but the spectrum keeped the same characteristic structure as that observed under the pressure above 71.7kbar.We attribute the sudden changing of the luminescence spectra to the phase transition of the sample at high pressure. The existence of the phase transition has been verified by the variation of Raman spectra of the sample at same pressure.Since that the crystal-field operates only on the J levels,and that the resultant splitting of each J level is significantly less than the spacing between different J levels, it seems likely that the two strongest lines, at 16186 and 16279cm-1, still correspond to 5D0????????7F2 transition. Therefore, we believe that the europium ions cccupy the noncentrosymrnetric sites.

用金刚石对顶砧微型压机产生上百千巴的压力,用氩离子激光器作激发光源,测量了高压下YVO_4:Eu的发光。实验结果表明,随着压力的升高,所观测到的谱线均发生红移,强度下降(~5D_2(A_1)-~7F_6(B_2~(1))线除外),在大约71.7kbar时,发光光谱发生突变,有一些新的谱线产生,与此同时,原有谱线的强度急剧下降以至消失。对高压下YVO_4:Eu喇曼光谱的测量表明,在相同的压力下,喇曼光谱也发生了突变。这说明,在71.7kbar时,样品发生了相变。

For poly-crystalline semiconductor film deposited on an insulator and then recrystallized by a laser beam, the influence of the substrate upon recrystallization of the film was analyzed theoretically. We found the critical laser power necessary for solid-liquid phase transition to take place, will change to a lower value as the poor thermal conduction of insulating substrate being reasonably considered. It is well known that the existence of stress in recrystallized films may be taken as a criterion for melting...

For poly-crystalline semiconductor film deposited on an insulator and then recrystallized by a laser beam, the influence of the substrate upon recrystallization of the film was analyzed theoretically. We found the critical laser power necessary for solid-liquid phase transition to take place, will change to a lower value as the poor thermal conduction of insulating substrate being reasonably considered. It is well known that the existence of stress in recrystallized films may be taken as a criterion for melting process that undergoes during laser irradiation. A large number of SOI samples prepared by LPCVD technology were studied after its laser recrystallization, to obtain the critical transition conditions through strass determination by use of Raman peak shifts. A comparison of the calculations based on the model taking low thermal conductance of the substrate into account with the experimental results showed its fitting is better than that with the influence of substrate being neglected.

从理论的角度分析了绝缘衬底对其上面半导体多晶膜激光熔化再结晶过程的影响,发现低导热的绝缘层使产生固-液相变的临界激光功率有明显的降低。用喇曼光谱测量了激光再结晶SOI层中的应力。应力的出现是多晶膜内曾经发生过固-液相变的佐证。从这一思想出发,对LPCVD方法制备的大量SOI样品进行激光再结晶临界条件的研究,证明了忽略绝缘层低热导影响的模型不能解释实验结果,而经过修正的公式则可以较好地拟合实验结果。

A method has been developed for determining the alloy compositions of ternary Ⅲ-Ⅴ compoudn semiconductors by measuring their Raman spectroscopy and the intensity ratio of the two mode behaviour for the long-wavelength optical phonons, A method ats6 is presented for studying the energy band structure of semiconductors by resonant Raman scattering. Resonant behaviour of two-TA and two-TO-phonon modes at the indirect gap (γ80-X3C) are investigated for GaP.

阐述了从喇曼光谱测量三元化合物半导体的双模频移和双模强度比率来确定含金组分。提出了由共振喇曼散射研究半导体的能带结构。实验观测了半导体 GaP在间接带隙(Γ_8?—Χ_(3c))附近的2TA和2TO双声子共振特性。实验表明共振喇曼散射可以测定半导体的直接带隙和间接带隙。

 
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