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退火对
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  thermal annealing on
     The influences of Joule heating and thermal annealing on giant stress impedance (GSI) effect in amorphous Fe 73.5 Cu 1Nb 3Si 13.5 B 9 wires were investigated.
     研究了焦耳退火和等温退火对Fe73.5Cu1 Nb3Si1 3.5B9非晶丝巨应力阻抗效应的影响。
短句来源
     Effects of CdCl_2 Thermal Annealing on CdTe/CdS Solar Cells
     CdCl_2气相退火对CdTe/CdS太阳能电池的影响
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     Effect of Thermal Annealing on Dark Current of Al_(0.3)Ga_(0.7)N Metal-Semiconductor-Metal UV Photodiodes
     热退火对MSM Al_(0.3)Ga_(0.7)N紫外探测器暗电流的影响
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     Effect of Rapid Thermal Annealing on Ti/Al-GaN Contacts
     快速热退火对Ti/Al-GaN接触的影响
短句来源
     The influence of thermal annealing on the conductivity of a- C:H:N films was also investigated .
     还研 究了热退火对 a- C:H:N薄膜的电导率的影响。
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  “退火对”译为未确定词的双语例句
     Effect of stress annealing on magnetic properties for nanocrystalline Fe_(73.5)Cu_1Nb_3Si_(13.5)B_9 alloy
     应力退火对Fe_(73.5)Cu_1Nb_3Si_(13.5)B_9纳米晶合金磁性能的影响
短句来源
     VTE Preparation of Compound Substrates of γ-LiAlO_2/α-Al_2O_3 and Influence of Erosion and Annealing
     VTE法制备γ-LiAlO_2/α-Al_2O_3复合衬底以及腐蚀和退火对其影响
短句来源
     Giant Stress impedance Effect in Amorphous and Electropulsing Annealed Fe_(73.5)Cu_1Nb_3Si_(13.5)B_9 Ribbons
     脉冲电流退火对Fe_(73.5)Cu_1Nb_3Si_(13.5)B_9合金薄带巨应力阻抗效应的影响
短句来源
     Effect of Post Annealing in Oxygon on the Properties of La_(0.67)Ca_(0.33)MnO_3-Ag Thin Films
     氧气氛后退火对La_(0.67)Ca_(0.33)MnO_3-Ag薄膜性能的影响
短句来源
     Influence of Vacuum Annealing on the Transport Property of La_(0.7)Ca_(0.3)MnO_3 Epitaxial Films
     真空退火对La_(0.7)Ca_(0.3)MnO_3外延薄膜输运特性的影响
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     In [1] W.
     W.
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     Present a 3e payment model based on N.
     · 在N.
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     Study on the Influence of Annealing on Properties of High Speed Steel
     退火高速钢性能的影响
短句来源
     Study on Crystalline Quality of Cd-Annealing CdZnTe Wafers Grown by Bridgman Method
     退火CdZnTe晶体质量的影响
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     ANNEALING OF GLASS
     玻璃的退火
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  thermal annealing on
Effect of ionizing irradiation and thermal annealing on the entropy of the atomic system of a SiO2 film
      
The influence of thermal annealing on the photoluminescence spectrum is also studied.
      
Effect of thermal annealing on the luminescence properties of ZnCdSe/ZnSe quantum-well structures
      
The optical constants of layers of porous silicon in the range 600-800 nm have been determined and the effect of vacuum thermal annealing on them has been investigated.
      
The effect of irradiation by Ar ions and thermal annealing on the properties of porous gallium phosphide (por-GaP) obtained by electrolytic methods is investigated.
      
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Specimen is common aluminium whose diameter is 1.665 mm.and length is 24 cm. The change of electrical resistivity after cold working is measured.The conclusion may be demonstrated as follows:the electrical resistivity is decrease as the strain less than 8.5% and is increase as the (?)train is larger than 8.5%.When E equals to 12.5% △ρ is zero,then △ρ is positive.The experiment also measures influence of annealing to the electrical resistivity and the change of it after quenching.From these we expect to know...

Specimen is common aluminium whose diameter is 1.665 mm.and length is 24 cm. The change of electrical resistivity after cold working is measured.The conclusion may be demonstrated as follows:the electrical resistivity is decrease as the strain less than 8.5% and is increase as the (?)train is larger than 8.5%.When E equals to 12.5% △ρ is zero,then △ρ is positive.The experiment also measures influence of annealing to the electrical resistivity and the change of it after quenching.From these we expect to know the source of influence to electrical resistivity by plastic deformation.

样品是工业纯铝,直径1.665毫米,长24厘米的铝丝,测量它拉伸过程中电阻率的变化。得到的结果:形变率ε<8.5%时,电阻率减少。当ε>8.5%,电阻率开始上升。至ε=12.5%△ρ=0。以后△ρ为正值。为了探讨电阻率改变的本质,还测量了退火对电阻率的影响和铝丝在高温淬火后电阻的变化。根据这些实验结果,试图进一步探讨范性形变对铝电阻影响的本质。

The effects of low temperature wet—nitrogen annealing on the interface of SiO_2-Si has been investigated by the high frequency C-V and quasi-static C-V techniques.The results indicate that both surface charges and interface state densities are effectively reduced by the 450℃ wet-N_2 annealing after the deposition and before the etching of aluminum.And comparisons have been made between the effects of annealing taken before deposition,before etching and after etching of aluminum.It is shown that the annealing...

The effects of low temperature wet—nitrogen annealing on the interface of SiO_2-Si has been investigated by the high frequency C-V and quasi-static C-V techniques.The results indicate that both surface charges and interface state densities are effectively reduced by the 450℃ wet-N_2 annealing after the deposition and before the etching of aluminum.And comparisons have been made between the effects of annealing taken before deposition,before etching and after etching of aluminum.It is shown that the annealing before etching gives minimum surface charge and interface state densities.The results and the mechanism of annealing are discussed.

用高频C—V和准静态C-V技术研究了低温湿氮退火对SiO_z—Si界面的影响。结果表明,铝淀积后并在铝腐蚀之前的460℃湿氮退火有效地减少了表面电荷和界面态密度。还比较了铝淀积前退火、铝腐蚀前退火和铝腐蚀后退火的效果,证明铝腐蚀前退火给出最小的表面电荷和界面态密度。对结果和退火机理进行了讨论。

Several types of stresses are analysed in YAG:Nd3+ crystal grown by Czochralski method. It is shown experimentally that the defect stress and chemical stress account for a considerable portion of the total stress. Therefore high temperature annealing has little effect on the illimination of stress, it even leads to the contrary results.

本文分析了引上法生长的YAG:Nd~(3+)晶体中几种应力.实验表明缺陷应力和化学应力占晶体总应力很大一部分,因此高温退火对消除应力效果不显著,有时甚至导致相反的结果.

 
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