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红色激光器
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  “红色激光器”译为未确定词的双语例句
     Slope efficiency of 0.56 W/A and strip red output power as high as 100 mW, vertical and parallel far field divergence angle of 31° and 9° respectively are obtained for 20 μm ridge laser device without coating.
     制得的未镀膜20μm脊型条形红色激光器的输出功率达到100 mW,斜率效率0.56W/A,垂直和平行远场发散角分别为31°和9°.
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  相似匹配句对
     Characteristics of AlGaInP Red Laser Diode and Its Thermal Property Analysis
     红色AlGaInP激光器的特性及热特性分析
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     On Red Manzhouli
     《红色满洲里》
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     The basic rules of laser including:
     所以,从激光器
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     Red Sports Car
     红色跑车
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     Laser Q-Switching
     激光器Q调
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  red laser
Based on analysis of transmission in atmospheric channel concerning 650 nm laser beam, performance of wireless laser communication link utilizing a low power red laser diode was evaluated.
      
Electron impact rovibrational excitation of the HF molecule (in the electronic ground state) is studied in the presence of an infra-red laser beam taken in the dipole approximation.
      
It is a way of producing localized tissue necrosis with light, most conveninently from a low-power, red laser, after prior administration of a photosensitizing agent, thereby initiating a non-thermal cytotoxic effect and tissue necrosis.
      
Electrophysiological recordings demonstrated that the sensilla respond to brief warming by red laser light or to broadband IR radiation.
      
The regime is characterized by a well-determined threshold intensity that is proposed to be associated with the threshold of bulk intrinsic laser-induced breakdown (LIB) by visible and near-infra-red laser radiation.
      
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AlGalnP/ GalnP strained Quantum well laser device emitting at about 680 nm wavelength has been fabricated and analyzed. Slope efficiency of 0.56 W/A and strip red output power as high as 100 mW, vertical and parallel far field divergence angle of 31° and 9° respectively are obtained for 20 μm ridge laser device without coating. For a 4 μm uncoated deep eroded laser device, the slope efficiency is 0.4 W/A, the output power about 10 mW, the peak wavelength 681 nm and the width 0.5 nm. The characteristic temperature...

AlGalnP/ GalnP strained Quantum well laser device emitting at about 680 nm wavelength has been fabricated and analyzed. Slope efficiency of 0.56 W/A and strip red output power as high as 100 mW, vertical and parallel far field divergence angle of 31° and 9° respectively are obtained for 20 μm ridge laser device without coating. For a 4 μm uncoated deep eroded laser device, the slope efficiency is 0.4 W/A, the output power about 10 mW, the peak wavelength 681 nm and the width 0.5 nm. The characteristic temperature is between 120-190 K for the device of different cavity length. The total internal losses of those devices arc 4.27/ cm, the internal quantum efficiency is 45%.

设计和制备了λ=680 nm的红色AlGaInP/GaInP应变量子阱激光器.制得的未镀膜20μm脊型条形红色激光器的输出功率达到100 mW,斜率效率0.56W/A,垂直和平行远场发散角分别为31°和9°.未镀膜4μm深腐蚀器件的功率可达10 mW,斜率效率为 0.4 W/A,峰值波长为681 nm,峰值半宽为0.5nm.不同腔长器件的特性显示器件的内损耗为4.27/cm,内量子效率达45%.对不同腔长的器件进行了变温测试,得到器件的特征温度为120~190 K.

 
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