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衬底特性
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  substrate characteristic
     PZT thick films are fabricated upon different seed layers considering the influence of the substrate characteristic to the thick film quality. The technology result is tested to confirm the function of the seed layer.
     考虑衬底特性对厚膜品质的影响 ,在不同的种子层上分别制备了 PZT厚膜 ,测试工艺结果 ,证实了种子层的作用。
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  “衬底特性”译为未确定词的双语例句
     The results show that the anisotropic property of high-temperature superconductor substrates have an influence on the performances of HTS microstrip antennas,which varies with substrates,while the variation of the properties of HTS substrates with the temperature also affects the performances of antennas.
     计算和分析结果表明,高温超导衬底的各向异性特性会影响高温超导微带天线的性能,而且这种影响因衬底而异,同时,衬底特性随温度的变化也将影响天线的性能。
短句来源
  相似匹配句对
     Properties of conducting transparent Zn-Sn-O films deposited on organic substrates
     柔性衬底Zn-Sn-O透明导电膜的特性
短句来源
     Characteristic Analysis for CPW′s on Thin Substrate
     薄衬底共面波导的特性分析
短句来源
     ENERGY CHARACTERISTICS OF R.L.C
     R.L.C的能量特性
短句来源
     PROPERTIES OF BIPOLARONS
     双极化子的特性
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  substrate characteristic
The HTS film and substrate characteristic tolerance sensitivity is investigated.
      


Polycrystalline silicon thin film soalr cell on low cost SSP substrate is studied to satisfy the needs of cost reduction and industrialization. The best efficiency of 6.36% (J SC=24.55 mA·cm -2,V OC=432.6 mV,F f=0.598 7) has been achieved. Processing conditions and further work are discussed.

采用颗粒硅带 (SSP)作为衬底 ,利用快速热化学气相沉积 (RTCVD)方法外延多晶硅薄膜并制作了转换效率达 6 .36 %的薄膜太阳电池 .对衬底特性、电池制作工艺、存在问题及进一步的研究方向做了探讨 .

A silicon based lead zirconate titanate (PZT) thick film technology by tape casting is studied in this paper.PZT thick films are fabricated upon different seed layers considering the influence of the substrate characteristic to the thick film quality.The technology result is tested to confirm the function of the seed layer.The influence of the sintering time to the tape casting PZT thick film quality is analyzed and the optimum sintering time is concluded.The silicon based PZT thick film technology in this...

A silicon based lead zirconate titanate (PZT) thick film technology by tape casting is studied in this paper.PZT thick films are fabricated upon different seed layers considering the influence of the substrate characteristic to the thick film quality.The technology result is tested to confirm the function of the seed layer.The influence of the sintering time to the tape casting PZT thick film quality is analyzed and the optimum sintering time is concluded.The silicon based PZT thick film technology in this paper can be used to fabricate the substrate of the radio frequency antenna.

研究了基于流延技术制备硅基锆钛酸铅 (PZT)厚膜的工艺。考虑衬底特性对厚膜品质的影响 ,在不同的种子层上分别制备了 PZT厚膜 ,测试工艺结果 ,证实了种子层的作用。分析了高温烧结时间对流延 PZT厚膜品质的影响 ,确定了最优高温烧结时间。文章提出的硅基 PZT厚膜工艺可用于制备射频天线的介质基片

Spectroscopic ellipsometric measurements in the infrared region is used to characterize the structure of CVD-diamond films. According to the status of surface and interface, different models are developed for diamond films on smooth silicon substrate and rough alumina substrate respectively with theoretical simulations followed. The Bruggeman effective media approximation, which includes the factors such as roughness, void and phase mixture, is applied to simulate the effects of rough surface and complicated...

Spectroscopic ellipsometric measurements in the infrared region is used to characterize the structure of CVD-diamond films. According to the status of surface and interface, different models are developed for diamond films on smooth silicon substrate and rough alumina substrate respectively with theoretical simulations followed. The Bruggeman effective media approximation, which includes the factors such as roughness, void and phase mixture, is applied to simulate the effects of rough surface and complicated interface on the ellipsometric data. It is found that the establishment of appropriate model has the strongest influence on the fit of ellipsometric spectra. The films on silicon substrates are well described by a two-layer film model. The bulk film (first layer) is pure diamond. The second layer (surface) represents a rough surface sublayer about (879 nm) thick, which contains 28.3% voids. But satisfactory agreements between experimental and calculated data cannot be obtained when the two-layer film model is applied to diamond films on alumina substrates. The best fit is achieved for the samples on alumina substrates with a (three-component) interface layer (64.13% alumina+23.34% diamond+12.53% void) included by Bruggeman effective media approximation.

用红外椭圆偏振仪对热丝化学气相沉积法制备的金刚石薄膜的光学参量进行了测量。由于表面状态和界面特性的差异 ,分别对镜面抛光硅片和粗糙氧化铝基片上的金刚石薄膜建立了不同的模型 ,并在此基础上进行了测试结果的计算拟合。为了综合反应诸如表面粗糙度等表面界面因素对测试结果的影响 ,根据衬底特性将表面层和界面层分离出来 ,并采用Bruggeman有效介质方法对它们的影响进行了近似处理。结果表明 ,硅衬底上金刚石薄膜的椭偏数据在模型引入了厚度为 879nm的表面粗糙层之后能得到很好的拟合。而对于氧化铝衬底上的金刚石薄膜而言 ,除了在薄膜表面引入了粗糙层之外 ,还必须在衬底和金刚石界面处加入一层由体积分数为 0 641的氧化铝、体积分数为 0 2 3 3 4的金刚石和体积分数为 0 12 53的空隙组成的复合过渡层 (厚度 995nm ) ,才能使计算值与实验参量很好地吻合。

 
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