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腐蚀面
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  etched surface
     Research purposes:Cracks and etched surface occur on the web,bottom plate and cross beam of bottom railway steel bridge. These are the common disasters after the bridge services for many years.
     研究目的下承式铁路钢桥在其腹部、底板和横梁上出现裂纹和腐蚀面,这是该种钢桥在服役多年后普遍存在的病害。
短句来源
  “腐蚀面”译为未确定词的双语例句
     Good micro bridge can be obtained in the system when PDS is 5? g/L, the quality percentage of TMAH is 25? %, the mol ratio of TMAH/KOH is 2, and the technique is 80?
     选用 5 g/L的过硫酸盐 (PDS)与TMAH质量分数为 2 5 %、TMAH与KOH摩尔比为2的KTMAH混合液作为腐蚀液 ,并在 80℃× 2 .5h的腐蚀条件下能得到平整的腐蚀面 ,可以制备质量较好的微桥结构
短句来源
     Energy-dispersive X-ray (EDX) and scanning electron microscope (SEM) analyses indicates that the anti-corrosion capacities of 1Cr20Ni14Si2 and 1Cr18Ni9Ti are better, and 15CrMo and 12Cr1MoV are worse.
     通过对材料的腐蚀面进行了X射线能谱(EDX)和扫描电子显微镜(SEM)分析发现,材料1Cr20Ni14Si2及1Cr18Ni9Ti抗腐蚀性能较好,12Cr1MoV和15CrMo抗腐蚀性能较差。
短句来源
     The α-Ti foil with protective layer in one side bended to corrosion surface gradually during corrosion process in 0.1 mol / L H2SO4, while the passive film was formed,i. e. a tensile stress was developed in the surface layer of the sample.
     结果表明,一边涂有保护层的α-Ti薄条在0.1mol/LH2SO4溶液中自然腐蚀过程中,随着钝化膜的形成,薄条不断向腐蚀面弯曲(保护面鼓起),即在试样表层产生一个拉应力。
短句来源
     The mesa etching of 2 .4μm GaInAsSb infrared detectors has been investigated in this present work, a etchant consisting of hydrofluoric acid, hydroge peroxide, tartic acid and water for the chemical etching GaInAsSb/GaSb materials has been proposed and a suit- able ratio of this etchant for fabricating 2.4μm GaInAsSb infrared detectors has been deter- mined by experiment results. This will be better the surface passivation of GaInAsSb in- frared detectors.
     本文提出了适于2.μm GaInsSb台面结构探测器制备的HF/H2O2/ C4H6O6/H2O腐蚀液体系,并确定了合适的成分配比。 实验结果表明,该腐蚀液 体系对GaInAsSb材料腐蚀速度适中、侧向腐蚀小、不破坏光刻胶保护、腐蚀面 平整、腐蚀槽齐整、受外延付表面质量影响较小。
短句来源
     The typical micromechanical process by means of alkaline etching was adopted to manufacture silicon micromirror array with smooth curved surface,and profilographic tests were conducted on samples to calculate the rapid etched surfaces formed in the process.
     采用碱性腐蚀的典型微机械加工法 ,制备出了光滑曲面的硅微透镜列阵 ,对试验样品进行了轮廓曲线测试 ,计算出了该腐蚀工艺的快腐蚀面 .
短句来源
  相似匹配句对
     Corrosion
     腐蚀
短句来源
     Low Temperature Corrosion Analysis of Heating Surface for a HRSG
     余热锅炉受热低温腐蚀分析
短句来源
     Research on the Corruption of Heated Surface Pipe of Power Plant Boiler
     电厂锅炉受热管子腐蚀研究
短句来源
     corrosion in water;
     污水腐蚀;
短句来源
     and then digital terrain model can be generated.
     模型。
短句来源
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  etched surface
The relief of the etched surface was examined by optical, scanning electron, and atomic-force microscopy.
      
The polishing properties of the etchants were compared by analyzing statistical distribution of such characteristics of the relief of the etched surface as the height and length of micro- and nanowaves.
      
The mechanism of the process is investigated by exploring the morphology of the etched surface.
      
Thin dopant films vacuum deposited on the etched surface of the crystals are irradiated by ruby (λ=0.694 μm) and Nd:YAG (λ=1.06 μm) laser pulses (pulse duration 20 ns) over a wide energy interval (0.1-1.8 J/cm2).
      
Freeze-etch studies have reported the absence of such knobs from the "etched" surface of the inner mitochondrial membranes.
      
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  corroded surface
The corroded surface was examined by IR spectroscopy.
      
Fractal characteristic of pits distribution on 304 stainless steel corroded surface and its application in corrosion diagnosis
      
Despite corroded surface textures suggestive of extensive weathering and dissolution, spatial trends in the detrital heavy-mineral populations are predominantly controlled by source and hydraulic factors.
      
The effects of discharges between a metal electrode and a solution surface and/or an interaction of hollow cathode plasma jet, plasma pencil, with liquid on the corroded surface of bronze and glass artifacts were studied.
      
Scanning electron microscopy was employed to characterize the corroded surface and to observe the extent of pitting in different media.
      
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In the fabrication of high efficiency green LED,the isolation and mesa formation have particular significance.In this work we have studied the chemical etching technique and mesa formation with alkaline K3Fe(CN)6 etchant which provides higher etching rate and a perfect surface is excellent for GaP. For GaP material and have examined the dependence of etching depth and appearance on etching time and etching temperature.We have found that the alkaline K3Fe(CN)6 etchant which providss higher etching rate and a...

In the fabrication of high efficiency green LED,the isolation and mesa formation have particular significance.In this work we have studied the chemical etching technique and mesa formation with alkaline K3Fe(CN)6 etchant which provides higher etching rate and a perfect surface is excellent for GaP. For GaP material and have examined the dependence of etching depth and appearance on etching time and etching temperature.We have found that the alkaline K3Fe(CN)6 etchant which providss higher etching rate and a perfect surface is excellent for GaP,

高效GaP绿色发光二极管制造中,器件的隔离和台面制作具有十分重要意义。本文介绍了用于GaP发光器件的隔离和台面制作的碱性铁氰化钾化学腐蚀技术。观察了腐蚀温度,腐蚀时间对腐蚀深度和表面形貌间关系。结果表明:碱性铁氰化钾对GaP台面腐蚀是一种优良的腐蚀剂,具有较高的腐蚀速率(2微米/分),并可获得光滑无凹坑或少凹坑的腐蚀面。对出现的实验现象从机理上作了解释。

Some key points for LPE growth of InGaAsP/InP buried heterostructure are investigated in thispaper. A new etchant-Br2/HBr system was put forward to obtain an ideal double channel geometry shape suitable to the growth of the BH structure. Anodization and etching procedures were adopted to remove effectively the damaged surface layer and poison impurities due to unequal dissolution rates of the crystal components by the photolithographic etchants. In addition,the novel processing procedure for controlling the...

Some key points for LPE growth of InGaAsP/InP buried heterostructure are investigated in thispaper. A new etchant-Br2/HBr system was put forward to obtain an ideal double channel geometry shape suitable to the growth of the BH structure. Anodization and etching procedures were adopted to remove effectively the damaged surface layer and poison impurities due to unequal dissolution rates of the crystal components by the photolithographic etchants. In addition,the novel processing procedure for controlling the axial p-n junction position by Zn diffsion during the 2 nd step LPE was also explored.The good performance of 1.3μm LD has been achieved with threshold current minimum of 25mA,typically 30mA and light output power up to 12.5mW driven by 60mA d-c current at room temperature.

本文对InGaAsP/InP(DC-PBH)激光器掩埋异质结液相外延生长中的几个关键工艺问题进行了研究,提出了获得有利于沟道掩埋生长的理想沟道几何图形的新的腐蚀配方(Br_2/HBr),对二次外延再生长光刻腐蚀面损伤层和有害杂质的去除采用了阳极氧化工艺,同时探索了利用二次外延过程中Zn扩散来控制限制层(3)掺杂的新方法,在研究基础上制造了重现性好且性能良好的1.3μm激光二极管,室温时,阈值电流最低小于25mA,典型值为30mA,在60mA直流电流的驱动下,光输出功率高达12.5mW。

The undercutting of convex corners of (001) silicon in aqueous KOH for silicon micromachining and the preferential etched planes i. e.the fast etching planes and their intersections to (001) Si have been investigated based on the crystallographic character of silicon and anisotropi cetching experiments. To prevent undercutting of convex corner two kind of mask compensation structures i. e.' shar pangle' and 'right angle' added to convex corners have been studied. Experiments have shown excellent...

The undercutting of convex corners of (001) silicon in aqueous KOH for silicon micromachining and the preferential etched planes i. e.the fast etching planes and their intersections to (001) Si have been investigated based on the crystallographic character of silicon and anisotropi cetching experiments. To prevent undercutting of convex corner two kind of mask compensation structures i. e.' shar pangle' and 'right angle' added to convex corners have been studied. Experiments have shown excellent convex corner etching results based on both mask compensation structures, and some important design parameters have been introduced.

通过分析硅的结晶学特性及实验考察硅各向异性腐蚀的择优腐蚀面和削角线,研究了尖角与方角的掩模补偿方案,提取了削角因子,并且给出了针对于特定腐蚀深度的最佳补偿图形及设计参数。研究结果表明该方法可对硅微机械加工中凸角腐蚀的削角部分进行全面补偿。

 
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