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晶棒
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  crystal bar
     Hafnium Crystal Bar Produced by Iodide Decomposition Method
     碘化法生产可锻性铪晶棒
短句来源
     This Paper Presented a simple method for measuring wedge angle between end-faces of crystal bar used in microwave delay lipe.
     本文介绍了一种简便的测量微波延迟线所用晶棒两端面间楔角大小的方法。
短句来源
     The hafnium crystal bar was produced by the iodide decomposition method from wast material of processing.
     用碘化物热分解法由铪加工残料生产铪晶棒
短句来源
  boule
     Boule sizes are typically 25mm diameter by 80mm long.
     晶棒尺寸通常为Φ25x80mm。
短句来源
  crystalbar
     Hafnium Crystal Bar Produced by Iodide Decomposition Method
     碘化法生产可锻性铪晶棒
短句来源
     This Paper Presented a simple method for measuring wedge angle between end-faces of crystal bar used in microwave delay lipe.
     本文介绍了一种简便的测量微波延迟线所用晶棒两端面间楔角大小的方法。
短句来源
     The hafnium crystal bar was produced by the iodide decomposition method from wast material of processing.
     用碘化物热分解法由铪加工残料生产铪晶棒
短句来源
  “晶棒”译为未确定词的双语例句
     Polycrystalline and Directionally Solidified Rods of Tb_(0.27)Dy_(0.73)Fe_(1.9) and Their Magnetostrictive Properties
     Tb_(0.27)Dy_(0.73)Fe_(1.9)多晶与定向晶棒及其磁致伸缩特性
短句来源
     Sb2Se3 nanobelts of 40 - 100 nm in width and nanorods of 100 - 250 nm in diameter were synthesized by a hydrothermal-coreduction method at 105 - 180 ℃ for 24 hours.
     采用水热共还原法在105-180℃合成了宽度为40-100nm的Sb2Se3纳米单晶带和直径为100-250nm的纳米单晶棒
短句来源
     Laser pulse at wavelength 0.95 μm was generated with a 6 mmdiameter,19 mm long rod,which was pumped with a ruby laser The maximum outputenergy is 1.62 mJ and the slop efficiency is 0.79 %.
     室温下用红宝石激光泵浦,在φ6×19mm的晶棒中,获得0.95μm的激光脉冲,最大输出能量达1.62mJ,泵浦斜率效率为0.79%。
短句来源
     A model of formation and growth of Sb2Se3 nanobelts and nanorods is proposed.
     并提出了Sb2Se3单晶带和单晶棒的生长模型。
短句来源
     Doped with SbI 3 the pseudotermary n-type thermoelectric material (Bi 2Te 3) 0.90 (Sb 2Te 3) 0.50 (Sb 2Se 3) 0.05 was grown by means of to and fro zone melting method and its axial thermoelectric property was mensurated.
     本文采用往复区熔法生长了掺杂 Sb I3的 ( Bi2 Te3) 0 .90 ( Sb2 Te3) 0 .0 5( Sb2 Se3) 0 .0 5赝三元 n型半导体温差电材料 ,测定了晶棒轴向温差电性能 .
短句来源
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  crystal bar
However, the current manual crystal bar alignment procedure is very much dependant on operator skill, and is not repeatable, leading to variations of the oscillators' quality.
      
However, mature granules with a central crystal bar lost their affinity towards colloidal gold.
      
The allotropie transformation hcp(a) >amp;amp;#x21CC; bcc(>amp;amp;#x0392;) has been examined in crystal bar zirconium.
      
By contrast, crystal bar Zr, tested under the same atmosphere, exhibited neither flow softening nor significant interruption hardening, but deformed in a conventional manner.
      
In the temperature range 723 to 823 K (450° to 550°C) annealed, crystal bar α-Zr exhibits anomalous behavior with respect to both single stress and incrementally stressed creep tests.
      
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  boule
One of the necessary conditions for growing quality crystals is the rigorous maintenance of the given boule profile.
      
Measurements of microhardness and the length of dislocation rays from the rosette around the indentation pit can clearly identify nonuniform distributions of structural defects, both along the direction of growth and along a diameter of a CdTe boule.
      
It is shown that the emissivity of the electroluminescent sources depends on the manganese concentration and the part of a ZnSe: Mn boule from which a plane-parallel wafer is cut.
      
Ensemble des zéros d'une fonction holomorphe bornée dans la boule unité
      
Gradients des fonctions intérieures dans la boule unité de ?n
      
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The object of this article is to present the experimental facts about the spiral crystals. The spiral crystal is just like a straight crystal bar with definite orientation coiled on a cylindrical surface. It is not formed spontaneously, but is formed under control. Some problems on spiral crystal are discussed.

本文报道关于铌酸锂螺旋晶体的实验事实。这种螺旋晶体就像一根具有一定取向的直晶棒被弯曲盘卷在一个圆柱面上,它不是自发地而是受人工控制形成的。文中并就此螺旋晶体作了一些讨论。

Distribution of defects caused by hydrogen in silicon single crystals is investigated by means of X-ray projection topography. It has been observed that the defect density and its size in new exposure surface area are similar to those in the crystal interior, which are different from those observed in thin wafer. These results are discussed briefly.

利用X射线形貌术方法研究了含氢硅单晶中氢致缺陷的分布。将原生晶棒从内部切开,观察到在切口暴露表面附近,热处理后产生的氢致缺陷的密度与尺寸与内部未暴露部分相同,而不同于薄片退火的情况,对此结果作了简要的讨论。

The structures and crystallization behavior of polytetrafluoroethy-lene (PTFE) were studied with electronoptical microscope, electron diffraction and di-fferential scanning calorimetry (DSC) techniques respectively. It was shown that themorphology of PTFE depends not only on the radiation intensity, but also on cry-stalline perfectness of PTFE. The irradiated PTFE had five kinds of typical structuremorphology including, to the surface crystals, needle-like+spherulite, rodlike. singlecrystals and spheric particles....

The structures and crystallization behavior of polytetrafluoroethy-lene (PTFE) were studied with electronoptical microscope, electron diffraction and di-fferential scanning calorimetry (DSC) techniques respectively. It was shown that themorphology of PTFE depends not only on the radiation intensity, but also on cry-stalline perfectness of PTFE. The irradiated PTFE had five kinds of typical structuremorphology including, to the surface crystals, needle-like+spherulite, rodlike. singlecrystals and spheric particles. These results were correlated with DSC crystallizationcurves very well. From electron pattern it is demonstrated that in these irradiated crystals there exi-sts some ordered regions, which act as nucleus of crystal. This indicated that withinsome range of dose, the inhomogenous distribution of irradiation of the same crystal,enables a perfect crystal lattice to have higher resistance to γ irradiation.

用电子显微镜(TEM、SEM),偏光显微镜,电子衍射(E.D)和示差扫描量热(DSC)等方法研究了~(60)Coγ辐射聚四氟乙烯(PTFE)的结晶行为。结果表明,PTFE晶体的形态随辐照剂量增大呈有规律的变化。经辐照过的PTFE晶体可以产生表面晶体、针晶十球晶、棒晶、单晶、球粒结构五类结晶形态。它们的结晶过程不仅与辐照条件有关,而且与PTFE晶体的完整性有关。这些结果与DSC测得的结晶性质之间存在对应关系。电镜图象表明,辐照过的晶体存在有序微区,它在结晶时起晶核作用。同一晶体辐照的不均一性,道明一个完整的晶格有抗γ射线的能力。

 
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