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外延生长技术     
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  growth technology
     Research on Growth Technology of β-SiC Thin Films Epitaxial Grown on Si Substrates
     Si基β-SiC薄膜外延生长技术研究
短句来源
     The development of the growth technology of Si/Ge superlattices and the discovery of luminesceilce of porous silicon give rise to intense interest of investiration on . the Si-based low-dimensional structuxe materials. This paper reviews recent progress in this field, including:electronic states and optical properties of Si/Ge superlattices, transport properties of modulatinn doped Si/Ge.
     Si/Ge超晶格外延生长技术的发展和多孔硅发光现象的发现引起了对硅基低维结构材料的关注.本文简单综述了近年来在Si/Ge超晶格电子态和光学性质、调制掺杂Si/GexSi1-x异质结构输运性质以及多孔硅发光机理等方面的研究进展.
短句来源
     The perfectness of HgCdTe crystal has been greatly improved for the obvious development of epitaxial growth technology, therefore, double-crystal diffraction measurement is required for evaluating crystal quality quantitatively.
     体晶和外延生长技术的进步明显改善了HgCdTe晶体的结构完整性,更多地提出了可定量评价其结晶品质的双晶衍射测量的需求。
短句来源
  epitaxy technique
     Since molecular beam epitaxy technique appeared, the research of semiconductor physics has gained many amazing break throughs.
     自从分子束外延生长技术出现以来,半导体物理的研究获得许多惊人的突破。
短句来源
     improves epitaxy technique to reduce loss.
     改进外延生长技术以降低各种损耗。
短句来源
  epitaxy techniques
     Modern Epitaxy Techniques
     现代外延生长技术
短句来源
     Because of the continual progress of epitaxy growth techniques theheterojunction devices,quantum wells and superlattice materials were developedrapidly. This article reviews briefly the most advanced epitaxy techniques includingMBE,MOCVD,CBE,ALE,and HWE of the present.
     由于现代外延生长技术的不断完善,使异质结器件、量子阱与超晶格材料的生长与应用得到迅速发展.本文概述了目前半导体材料与器件研究最先进的几种外延生长技术,包括MBE、MOCVD、CBE、ALE和HWE.
短句来源
  a epitaxial technology
     A Epitaxial Technology for Si_(1-x)Ge_x/Si Materials
     Si_(1-x)Ge_x/Si材料外延生长技术
短句来源

 

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      growth technology
    The problem arises in applications connected with modified Czochralski crystal growth technology using the heat field rotation method.
          
    A setup and growth technology for manufacturing carbon nanotubes by the catalytic gas-phase pyrolysis of ethanol are described.
          
    InAsSbP/InAs heterostructures for thermophotovoltaic converters: Growth technology and properties
          
    One of the most important characteristics associated with crystal growth technology is the entrapment of inclusions by the growing crystal.
          
    The AlGaAs diode laser is based on organometallic vapour epitaxial crystal growth technology.
          
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      epitaxy technique
    A single-crystal Si substrate and a Si film grown using the molecular-beam epitaxy technique serve as the diffracting crystals of the X-ray interferometer.
          
    The paper reports the results of measurements of the lattice IR reflection and Raman scattering spectra for the Ga1-xAlxP (x=0-0.8) films grown on the GaP(111) substrate by the liquid-phase epitaxy technique.
          
    A low-temperature liquid phase epitaxy technique involving rapid cooling of a solution melt has been developed for the growth of epitaxial GaAs films on germanium substrates.
          
    Single crystal thin films of Bi substituted iron garnets have been grown by the liquid phase epitaxy technique.
          
    Thin insulating and c-axis oriented films of La2CuO4 are grown using a molecular beam epitaxy technique.
          
    更多          
      epitaxial techniques
    Results obtained were in good agreement with others already reported in the literature for similar structures grown using different epitaxial techniques.
          
    Therefore, epilayers obtained using high growth rates exhibit electronic properties very similar to the ones obtained using conventional epitaxial techniques.
          
    Liquid phase epitaxial techniques have been developed for the preparation of thin films of optical materials.
          
    High purity n-type GaAs samples grown by a variety of epitaxial techniques were transmutation doped with a low fluence of thermal neutrons to produce Ge and Se impurities from the host Ga and As atoms, respectively.
          
    Growth and characterization of superconducting V3Si on Si and Al2O3 by molecular beam epitaxial techniques
          
    更多          
      epitaxy techniques
    Scientists at the Naval Research Laboratory have been using molecular beam epitaxy techniques to grow a variety of high quality magnetic transition metal (TM) films and superlattices having TM thicknesses in the 1-10 monolayer regime.
          
    This value is quite small for films prepared by vapor-phase epitaxy techniques.
          
    In comparison to the complex flow occurring in other vapor phase epitaxy techniques, the hydrodynamics in the VLE reactor are simple, well behaved, and can be fully described by a few algebraic equations.
          
    Materials grown at low temperatures by molecular beam epitaxy techniques have exhibited high resistivity after annealing, and sub-picosecond carrier recombination times.
          
    Development of quick, superior quality epitaxy techniques for SiC and GaN on homoand heterogeneous substrates.
          
      其他


    The growth of liquid phase epitaxial (LPE) films on the [111] direction of the Gd_3Ga_5O_(12) substrates with nominal film compositions in the (YSmLuCa)_3 (FeGe)_5O_(l2) system is studied. The effect of the molar ratio of Lu_2O_3/Sm_2O_3, CaO/CaO+ GeO_2 and the Substitution of Gd~(3+) ions on the temperature coefficient of the collapse fiel d H_0 and other bubble material Parameters is discussed in detail. Experimentai results show that high quality 3μ bubble films can be obtained with proper selection of the...

    The growth of liquid phase epitaxial (LPE) films on the [111] direction of the Gd_3Ga_5O_(12) substrates with nominal film compositions in the (YSmLuCa)_3 (FeGe)_5O_(l2) system is studied. The effect of the molar ratio of Lu_2O_3/Sm_2O_3, CaO/CaO+ GeO_2 and the Substitution of Gd~(3+) ions on the temperature coefficient of the collapse fiel d H_0 and other bubble material Parameters is discussed in detail. Experimentai results show that high quality 3μ bubble films can be obtained with proper selection of the molar ratio of Lu_2O_3/Sm_2 O_3 and CaO/CaO + GeO_2·The temperature stability of the small bubble material can be greatly improved with the substitution of Gd~(3+) ions.

    本文简要地讨论了3微米泡径CaGe系石榴石膜的配方选择和技术指标的制定。应用液相外延生长技术,在Gd_(3)Ga_(5)O_(12)的[111]方向上生长了(YSmLuCa)_3(FeGe)_(5)O_(12)系石榴石膜。详细阐述了Lu_(2)O_3/Sm_(2)O_3比、CaO/GeO_(2)O+CaO比和G~(+3)对破灭场H_0的温度系数和其它磁泡参数的影响。实验表明:适当选择Lu_(2)O_3/Sm_(2)O_3比和CaO/Ca+GeO_2比,可以获得优质的3微米泡径磁泡材料。在石榴石膜中加入Gd~(+3)可以大大改善小泡径材料的温度稳定性。

    The silicon epitaxy of the SiCl_4-SiH_4-H_2 system has been studied.The results obtainedshow that the SiCl_4-SiH_4 mixed source is better than SiCl_4 or SiH_4,used separately,and that whenmixed in suitable proportion,it may be used to substitute SiH_2Cl_2.This mixed source maydecrease the temperature of epitaxy,control the velocity of silicon growth,improve the homo-genity of silicon epitaxy and restrain the autodoping effect.The mixed source epitaxy maysatisfy different conditions for the preparation of different...

    The silicon epitaxy of the SiCl_4-SiH_4-H_2 system has been studied.The results obtainedshow that the SiCl_4-SiH_4 mixed source is better than SiCl_4 or SiH_4,used separately,and that whenmixed in suitable proportion,it may be used to substitute SiH_2Cl_2.This mixed source maydecrease the temperature of epitaxy,control the velocity of silicon growth,improve the homo-genity of silicon epitaxy and restrain the autodoping effect.The mixed source epitaxy maysatisfy different conditions for the preparation of different kinds of semiconductor devices.

    本文探讨了SiCl_4/SiH_4/H_2混合源常压和低压硅外延生长技术.实验结果表明,混合源兼有SiCl_4和SiH_4两者的优点,并在一定比例下具有SiH_2Cl_2源的特性.它能降低外延生长温度、调节淀积速率,改善淀积的均匀性和抑制自掺杂效应.因此它可适应多种器件的要求.

    A two-step epitaxial growth technique from low pressure to atmos-pheric pressure has been presented.The doping profile of the epitaxial filmhas been measured by means of the resistance spreading technique.Theresults have shown that the technique is of great advantage to reduceautodoping and to improve the quality of epitaxial layers.

    本文提出了低-常压两步外延生长技术。用扩展电阻法测量了外延层的杂质分布。结果表明,低一常压两步外延对减小自掺杂和保证外延层质量非常有利。

     
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