助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   蓝宝石衬底 的翻译结果: 查询用时:1.231秒
图标索引 在分类学科中查询
所有学科
无线电电子学
工业通用技术及设备
物理学
材料科学
更多类别查询

图标索引 历史查询
 

蓝宝石衬底
相关语句
  sapphire substrate
     Study of Processing and Properties of Si_3N_4 Films Prepared on Sapphire Substrate
     蓝宝石衬底上Si_3N_4膜系的制备工艺与性能研究
短句来源
     Study of Processing and Properties of SiO_2 Films Prepared on Sapphire Substrate
     蓝宝石衬底上SiO_2薄膜的制备工艺与性能研究
短句来源
     Output Power of an AlGaN/GaN HFET on Sapphire Substrate
     蓝宝石衬底AlGaN/GaN HFET功率特性
短句来源
     The main contents and results are listed as follows:With the help of OPFCAD software, anti-reflective and protective films of SiO2/Si3N4、 SiO2/Si3N4/SiO2 are designed on the sapphire substrate and analysis of structure sensitive factor and variation are done.
     利用OPFCAD软件在蓝宝石衬底上设计了SiO_2/Si_3N_4、SiO_2/Si_3N_4/SiO_2等增透保护膜系,并对所设计的膜系进行了结构敏感因子(n,d)及结构偏差分析。
短句来源
     The fabrication of HEMT of AlGaN/GaN heterostructures grown on sapphire substrate is reported. Without any heat dissipation equipments,gate-length 0.3μm and gate-width 100μm devices exhibit excellent DC characteristics,saturated current is 55.9mA,maximal current is 92.1mA.
     报道了蓝宝石衬底、栅长为0.3μm AlGaN/GaN HEMT器件的制备,在未采用散热设备的条件下测得栅宽为100μm器件的饱和电流为55.9mA,最大源漏电流为92.1mA。
短句来源
更多       
  3 substrate
     GROWTH AND PROPERTIES OF SUPERCONDUCTING EPITAXIAL MgB_ 2 THIN FILM FABRICATED ON Al_ 2O_ 3 SUBSTRATE BY HYBRID PHYSICAL CHEMICAL VAPOR DEPOSITION
     混合物理化学气相沉积法制备蓝宝石衬底外延MgB_2薄膜性质的研究
短句来源
     GaN films grown in pairs on two opposite c faces of Al 2O 3 substrate by low pressure metal organic vapor phase epitaxy (MOVPE) have been studied by sc anning electron microscopy (SEM) and converged beam electron diffraction (CBED).
     用低压金属有机气相外延方法设备在蓝宝石衬底两个相反取向的C面上同时生长六方相氮化镓薄膜 ,对此进行了扫描电子显微镜、透射电子显微镜的分析和研究。
短句来源
  sapphire substrates
     The main contents and results are as follows:(1) With the help of OPFCAD software, anti-reflective and protective films of SiO_2、 SiO_2/Si_3N_4、 SiO_2/Si_3N_4/SiO_2 are designed on sapphire substrates.
     (1)利用OPFCAD软件在蓝宝石衬底上设计了SiO_2/Si_3N_4、SiO_2/Si_3N_4/SiO_2增透保护膜系。
短句来源
     Development of AlGaN/GaN Power HEMTs Grown on Sapphire Substrates
     蓝宝石衬底AlGaN/GaN功率HEMTs研制
短句来源
     MOCVD-grown 0.25μm gate-length AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated on sapphire substrates.
     在蓝宝石衬底上用MOCVD技术生长的AlGaN/GaN结构上制作出0.25μm栅长的高电子迁移率功率晶体管.
短句来源
     AlGaN/GaN and AlGaN/AlN/GaN heterostructure two-dimensional electron gas materials are grown on sapphire substrates by low-pressure MOCVD technique. AlGaN/GaN HEMTs and AlGaN/AlN/GaN HEMTs are fabricated by the same device processes.
     利用低压MOCVD技术在蓝宝石衬底上生长了AlGaN/GaN异质结和AlGaN/AlN/GaN异质结二维电子气材料,采用相同器件工艺制造出了AlGaN/GaNHEMT器件和AlGaN/AlN/GaNHEMT器件.
短句来源
     Cascode Connected AlGaN/GaN Microwave HEMTs on Sapphire Substrates
     蓝宝石衬底AlGaN/GaN共栅共源微波HEMTs器件(英文)
短句来源
更多       
  “蓝宝石衬底”译为未确定词的双语例句
     The results show that after SiO_2、 SiO_2/Si_3N_4、 SiO_2/Si_3N_4/SiO_2 films deposited on the surfaces of sapphires the average transmittances over 3~5μm waveband can exceed 97%, which can meet the requirements of missile dome.
     设计结果表明,蓝宝石衬底上双面镀SiO_2/Si_3N_4、SiO_2/Si_3N_4/SiO_2膜系,在3~5μm波段平均透过率大于97%,可满足导弹头罩设计和使用的要求。
短句来源
     0.25μm Gate-Length AlGaN/GaN Power HEMTs on Sapphire with f_T of 77GHz
     f_T为77GHz的蓝宝石衬底0.25μm栅长AlGaN/GaN高电子迁移率功率器件(英文)
短句来源
     AlGaN/GaN High Electron Mobility Transistors on Sapphires with f_(max) of 100GHz
     f_(max)为100GHz的蓝宝石衬底AlGaN/GaN高电子迁移率晶体管(英文)
短句来源
     Using the pulse laser at the energy density of 400mJ/cm~2,the GaN film was successfully transferred from sapphire to Cu.
     采用激光剥离技术,在400mJ/cm2脉冲激光能量密度条件下,成功地将GaN薄膜从蓝宝石衬底转移至Cu衬底。
短句来源
     Investigation on SiO_2 thin films prepared on sapphire
     蓝宝石衬底上制备SiO_2薄膜的研究
短句来源
更多       
查询“蓝宝石衬底”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  sapphire substrate
The possibility of obtaining a film of Li1.3Al0.3Ti1.7(PO4)3 solid electrolyte on a sapphire substrate from an aqueous peroxide solution of a precursor was analyzed.
      
Quasibicrystal structures with interblock boundaries of epitaxial zinc oxide layers on a sapphire substrate along a given direction have been obtained for producing submicron electronic devices.
      
The source was a thin NiCr film sputtered on a thin sapphire substrate and suspended by nylon threads.
      
Germanium nanocrystals were formed in a GeO2 film during the process of germanium monoxide gas-phase deposition onto a sapphire substrate and studied by photoluminescence (PL) and Raman scattering spectroscopy.
      
The fluorescence spectra of Mg porphin molecules deposited from the gas phase on a sapphire substrate simultaneously with tetrahydrofuran molecules are measured.
      
更多          
  3 substrate
It is shown that the use of the buffer technique allows one to grow on one (102) α-Al2O3 substrate ZnO layers oriented in the (110)and (0001) planes with clearly pronounced interlayer boundaries.
      
In the film on a ZrO2(Y2O3) substrate the electrical resistivity was almost 1.5 orders of magnitude higher than that in the other three films.
      
A complex of studies of the physical properties of thin lanthanum manganite La0.67Ca0.33MnO3 films were performed for a monolithic layered structure consisting of a LiNbO3 substrate and a La0.67Ca0.33MnO3 thin epitaxial film.
      
The sample is a sequence of layers Y50nm[Dy4.3nm/Y2.8nm]350/Y234nm/Nd200nmAl2O3 (substrate) that is grown as a single crystal with the [001] axis of the hexagonal lattice, which is perpendicular to the layer plane.
      
According to the ferromagnetic resonance data, the Curie point of Ge:Mn and Si:Mn on a GaAs substrate and of Si:Fe on an Al2O3 substrate is no lower than 420, 500, and 77 K, respectively.
      
更多          
  sapphire substrates
Nitrogen-doped ZnO films are grown on (0001)-oriented sapphire substrates by magnetron RF sputtering in an Ar-NO plasma at a pressure of about 10 mTorr and Ar-to-NO flow-rate ratios of 0-90.
      
Films were deposited on sapphire substrates using layer-by-layer ion-plasma sputtering with subsequent vacuum annealing.
      
The films are prepared by molecular-beam epitaxy on single-crystal sapphire substrates with a Nb(110)buffer layer.
      
The layers were grown by laser-plasma deposition onto heated single-crystal gallium arsenide or sapphire substrates.
      
The formation of epitaxial heterostructures including YBa2Cu3O7-δ and SrTiO3 thin films on R-plane sapphire substrates has been studied.
      
更多          


In this paper, fabrication of a MESFET/SOS microwave differential amplifier is described. The full ion implantation technique is applied. Only three masks are needed to simplify the processes.The D. C. and microwave properties for MESFET/SOS devices at room temperature and liquid nitrogen temperature (i. e. 77K) are also investigated.Experimental results at 77K indicate that obvious improvements can be obtained at low temperature.The D. C. intrinsic transconductance increases about 46%. The improvement in unity...

In this paper, fabrication of a MESFET/SOS microwave differential amplifier is described. The full ion implantation technique is applied. Only three masks are needed to simplify the processes.The D. C. and microwave properties for MESFET/SOS devices at room temperature and liquid nitrogen temperature (i. e. 77K) are also investigated.Experimental results at 77K indicate that obvious improvements can be obtained at low temperature.The D. C. intrinsic transconductance increases about 46%. The improvement in unity current gain frequency is from 4.9 GHz to 6.5 GHz. The improvements are attributed by the large increase in average electron mobility as well as in drift velocity at 77 K.

本文介绍的MESFET/SOS微波差分放大器是在蓝宝石衬底上硅外延薄膜内制备的.该电路特征线宽为1μm,制备工艺简单,仅需三块掩模,应用全离子工艺,具有足够小的漂移电压和失调电流.由于采用蓝宝石为衬底,大大减小了寄生电容,从而获得高的频率特性.在77K时对器件的测量结果表明,低温下器件的直流和微波特性均获得显著的改善.直流本征跨导增加了约46%,单位电流增益频率从4.9GHz增加到6.5GHz.作者认为这主要归因于低温下平均电子迁移率和电场漂移速度有很大的提高.

In this paper, a new method for improving the crystalline quality of SOS films is developed.lt consists of three steps: (1) A thin amorphous silicon layer is prepared by electron beam evaporation. (2) The wafer is annealed in a hydrogen atmosphere. (3) The required thickness (0.6-0.8μm) of SOS film is deposited by the standard OVD method on the thin silicon layer. The resulting SOS films are examined by reflection electron diffraction, Nomarski phase interference microscopy, carrier concentration measurement...

In this paper, a new method for improving the crystalline quality of SOS films is developed.lt consists of three steps: (1) A thin amorphous silicon layer is prepared by electron beam evaporation. (2) The wafer is annealed in a hydrogen atmosphere. (3) The required thickness (0.6-0.8μm) of SOS film is deposited by the standard OVD method on the thin silicon layer. The resulting SOS films are examined by reflection electron diffraction, Nomarski phase interference microscopy, carrier concentration measurement and optical absorption measurement. The results show that the crystalline perfection of the film is good,the optical absorption factor FA≤ 140 @×106cm-2. The autodoping is expressed and the carrier concentration is lower than 1×1013cm-3.

这是一种提高SOS膜结晶质量的新方法.这种方法包括三步:1)在蓝宝石衬底上先用电子束蒸发薄无定形硅保护层.2)然后在氢气中进行退火处理.3)再用通常CVD方法在带薄硅层上外延生长所需厚度(0.6~0.8μm)的SOS膜.对所得SOS膜进行电子衍射、Nomarski相衬干涉显微镜表面观察、载流子浓度测量和光吸收研究表明:SOS膜质量完好,光吸收因子F_A≤140×10~6cm~(-2),抑制了自掺杂,载流子浓度不超过1×10~(13)cm~(-3).

Ⅲ-Ⅴ compound GaN has the Wurtzite crystal structure and belongs to symmetry group Vβγ For GaN, group theory predicts the following lattice phonons: A1 branch in which the Raman-active phonon is polarized in the z direction and which is infrared active also, and E1 branch in which the phonon polarized in the x, y plane can be observed in both infrared and Raman experiments, two E2 branches which are Raman active and two silent B1 modes. The A1 and E1 modes can be split into longitudinal (LO) and transverse (TO)...

Ⅲ-Ⅴ compound GaN has the Wurtzite crystal structure and belongs to symmetry group Vβγ For GaN, group theory predicts the following lattice phonons: A1 branch in which the Raman-active phonon is polarized in the z direction and which is infrared active also, and E1 branch in which the phonon polarized in the x, y plane can be observed in both infrared and Raman experiments, two E2 branches which are Raman active and two silent B1 modes. The A1 and E1 modes can be split into longitudinal (LO) and transverse (TO) components by the macroscopic electric field associated with the longitudinal phonon.Volia Lemos et al. have observed three Raman active optical phonon modes E2, A1(TO) and E1 (TO) in GaN epitaxy layer grown by vapor phase epitaxy (VPE) on sapphire substrate, No E1 (LO)mode was. observed in Raman scattering experiment previously.The present work shows a Raman scattering experimental result in un-doped N-GaN samples grown on (0001) oriented sapphire substrate by VPE. An Ar+ laser was used as the excitation source.In order to simultaneously examine all possible Raman active modes, we made the laser beam incident at 60°from the normal to the sample sur- face and a hight scattering configuration was used for detecting the scattering light. The SEM morphology photographs and Laue patterns for all GaN samples used this work have been taken in order to check their quality.A new scattering peak X at about 734±3cm-1 which has never been reported for GaN epitaxy layer is observed. The characteristics of this peak are as follows:1) It can be observed in some N-GaN samples repeatedly;2) The intensity of the X peak follows an (n + 1) temperature dependence, where n is defined by n= (ethv/kT- 1)-1. This means that the X line is a one order of stoks Raman scattering peak;3) The back scattering intensity of the X peak is decreased enormously;4) The intensity of the X peak depends on the quality of GaN epitaxy layer, the higher the quality of the crystal, the higher the intensity of the X peak.It has been reported by infrared reflection experiment that the E1 (LO)phonon vibration frequency is at 800±70cm-1. According to the facts mentioned above, we affirm that the peak X is the E1 longitudinal optical phonon mode in GaN crystal. Group theory predicts that the E1(LO) scattering should be forbidden under back scattering condition. We have observed a weak X peak in the Raman scattering experiment. This can be explained as follows:The imperfection caused by defects in GaN crystal destroys the crystal symmetry, as a result the selection rule of Raman scattering should be broken partly.We have also observed Raman spectra on N-GaN samples grown with different growth rate. It has been found that the intensity ratio of A! (TO) and E2 modes depends on the growth rate of samples. It has been also found that the quality of GaN epitaxy layer is affected by growth rate. So we can characterize the quality of GaN epitaxy layer by the intensity ratio of Ai (TO) and E2 modes in a Raman scattering spectrum.

测量了在蓝宝石衬底上气相外延生长GaN的拉曼散射谱。除观察到已被确认的两个E_2,一个A_1(TO)和一个E_1(TO)声于振动以外,在734±3cm~(-1)处观察到一个散射峰且从实验上确认其为GaN的纵向光学声子模E_1(LO)。而且发现其强度与外延层晶体质量密切相关。A_1(TO)和高频E_2散射峰相对强度变化显示不同生长条件引起的外延层质量的变化。

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关蓝宝石衬底的内容
在知识搜索中查有关蓝宝石衬底的内容
在数字搜索中查有关蓝宝石衬底的内容
在概念知识元中查有关蓝宝石衬底的内容
在学术趋势中查有关蓝宝石衬底的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社