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    THE TERNARY BLUE-EMITTING PHOSPHOR SrGa_2S_4:Ce
    三元系SrGa_2S_4:Ce蓝色发光材料
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    Nanocrsytalline Ba1-xMgAl10O17∶xEu2+ (0.05≤x≤0.4) blue-emitting phosphor was successfully prepared by low-temperature combustion synthesis.
    采用燃烧法在低温成功合成了纳米Ba1-xMgAl10O17∶xEu2+(0.05≤x≤0.4)蓝色荧光粉,着重研究了Eu2+掺入量对荧光粉光谱特性的影响。
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    So,we choose the host lattice LaMgAl_(11)O_(19)(LMA), which has a distorted magnetoplumbite structure and consists of spinel-like blocks separated by mirror planes, has its particular excellence: (1) Eu~(3+),Tb~(3+) and Eu~(2+) all can replace La~(3+) on the mirror planes to form red, green and blue-emitting luminescent center.
    LaMgAl_(11)O_(19)系六方晶系的畸变磁铅矿结构,由镜面层和尖晶石层两部分组成。 LaMgAl_(11)O_(19)具有其独特的优点,(1)Eu~(3+)、Tb~(3+)和Eu~(2+)均将取代镜面上La离子位置,分别形成红色、绿色和蓝色发光;
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    In chapter 4, a group of NaYF4:Yb3+,Tm3+ samples were prepared by high temperature solid-state reaction and Precipitation method, respectively. The effects of Yb3+ concentration on emission intensities were investigated, and the optimized Yb3+ concentration was obtained.
    第四章中分别采用沉淀法和高温固相法制备了NaYF4:Yb3+,Tm3+双掺杂蓝光样品,讨论了沉淀法所制备样品中Yb3+离子掺杂浓度对蓝色上转换发光的影响,得到了Yb3+离子的最佳掺杂浓度。
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    The blue-emitting long persistent phosphor CaAl_2O_4:Eu~(2+),Nd~(3+)was prepared by combustion synthesis and the influence of above processing conditions on its luminescence was investigated.
    (2) 利用燃烧法制备CaAl_2O_4:E~(2+),Nd~(3+)蓝色长余辉材料,探讨(1)中所述因素对CaAl_2O_4长余辉材料发光性能的影响。
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Microscopic observations showed that the blue electroluminescent lines in znS:Cu single crystal emit not only blue light but also green light. The outer layer region of a.c. electroluminescent lines only emits blue while the inner region emits green.Hence, it revealed the phenomena of delamination luminescence under the microscope.

显微观察证明,在ZnS:Cu单晶中,蓝色的交流电致发光线不只是发射蓝色光,它同时还发射绿色光。蓝色光只发射于发光线的外层区域,而其内层区域是绿色光的发射区。因此,在显微镜下就显示出了分层发光现象。

ZnS:Cu phosphor is a well known material in practice, and the chemistry of its activator center has been widely studied.This work is intended to analyse the possible reactions involved during the formation of luminescence centers on the basis of thermodynamics and predict the valence of the center.As fluorescent ZnS is generally prepared under constant temperature and constant pressure, it is possible to define the chemical equilibrium in terms of the change of the free energy, for which the following equation...

ZnS:Cu phosphor is a well known material in practice, and the chemistry of its activator center has been widely studied.This work is intended to analyse the possible reactions involved during the formation of luminescence centers on the basis of thermodynamics and predict the valence of the center.As fluorescent ZnS is generally prepared under constant temperature and constant pressure, it is possible to define the chemical equilibrium in terms of the change of the free energy, for which the following equation is always used for approximate calculation,If AGJ<0, the reaction will proceed forward automatically. Thus, according to the calculations, it is found that:a) Reactions which produce blue emitting fluorescent ZnS: Zn are .ZnS + 1/2 O2 (trace) = 2ZnO (trace) +1/2 S2 (1-1)From these reactions, free zinc atom CZn(g)] can be formed but under the presence of oxygen, free zinc atom is introduced through such physical-chemistry process as absorption and diffusion, into the lattice. Consequently, a complex defect, which consists of a vacancy of sulfur and an interstitial zinc, is formed. This complex defect is considered as the blue emitting luminescence center, expressed as [Zn] []b) Reactions which produce fluorescent ZnS: Cu areZnS + 1/2 O2(trace) =ZnO(trace)+ 1/2 S2 (1-1)From these reactions, activator center is formed. At the same time, these reactions produce Cu2S or Cud. The formation of Cu center needs the existence of the free zinc atom. Free zinc atom dif fusses into ZnS crystal to form [Zn] [ ] complex defects. They are the "Receptors" of Cu2S or CuCl for introducing them into the crystal.It may thus be concluded, whatever Cu2S or CuCl gets into ZnS crystal the Cu is always in monovalence, coinciding with that obtained from ESR.

无激活剂znS天蓝色发光必须在存在氧的情况下反应形成游离锌,然后通过吸附、扩散等物理化学过程形成硫空位和填充锌的晶体缺陷、构成天蓝色发光的发光中心,以(Zn)〔 〕结构表示。 铜激活的ZnS:Cu荧光粉,Cu发光中心的形成同样需要存在氧的情况下形成游离锌,游离锌扩散入ZnS晶格形成(Zn)〔 〕结构,它是Cu_2S或CuCl进入晶体的“接受体”。无论是Cu_2S或CuCl进入晶格,Cu均为Cu~+状态。

Recently there has been considerable interest in blue electroluminescence (EL) in ZnSe diodes[1-5] . Two blue EL emission bands in Au-ZnSe MIS diodes at room temperature (RT) have been reported by us[4], attention was directed to determining the origin of two blue EL bands. Hu Deliang[5] has reported one blue EL emission band in C-ZnSe:Ga MS diodes at RT. In the present paper effort is concentrated on examining the origin of the blue EL emission band in C-ZnSe:Ga MS diodes.Nominally undoped ZnSe crystals were...

Recently there has been considerable interest in blue electroluminescence (EL) in ZnSe diodes[1-5] . Two blue EL emission bands in Au-ZnSe MIS diodes at room temperature (RT) have been reported by us[4], attention was directed to determining the origin of two blue EL bands. Hu Deliang[5] has reported one blue EL emission band in C-ZnSe:Ga MS diodes at RT. In the present paper effort is concentrated on examining the origin of the blue EL emission band in C-ZnSe:Ga MS diodes.Nominally undoped ZnSe crystals were grown from the vapour phase in sealed capsules containting slight excess of zinc[6,7] in this laboratory. Dice with dimensions of 3×3×1mm3 were annealed in molten Zn or Zn-Ga alloy to reduce their resistivities to the range 1 -10Ω·cm. The ohmic contact was In, the barrier electrode was Au or C and a layer of ZnS film was used as an insulating layer. Thus the ZnSe MS or MIS diodes were fabricated.Fig. 1 shows the EL emission spectra at 77K in forward-biased ZnSe diodes with different structure: Au-ZnSe MIS (A), Au-ZnSe: Ga MIS(B), C-ZnSe: Ga MS (C) and C-ZnSe MIS (D). There are two regions of photon energy in the spectra. The first of these is the region of exciton emission including ES and EX-2LO bands. The second is the region of edge emission including the series of free-to-bound (FB) bands labeled Q0FB, Q1FB, Q2FB which were equally spaced in energy by 31.5meV.Fig. 2 shows the temperature variation of the EL emission spectrum in a forward-biased C-ZnSe:Ga MS diode. The dominant features in the 77K spectrum are the series of QFB bands. As the temperature was increased the series of QFB bands became weak and were quenched above 130K, but at the same time the EX-2LO band was readily resolved right to room temperature where it was the blue band of lower energy. The results show that the blue EL emission band observed at RT in the C-ZnSe:Ga MS diode can be attributed to the recombination of a free exciton with the emission of two LO phonons.Fig. 3 shows blue EL emission spectra at RT in forward-biased ZnSe diodes with Au-ZnSe MIS (A and B) , C-ZnSe:Ga MS (C) and C-ZnSe MIS (D). It was found that only one blue band of lower energy can be observed in the C-ZnSe diodes. Comparing A with B in Fig.3, it was evident that the blue band of high energy is absorbed by ZnSe crystal, but the blue band of lower energy can pass through the ZnSe crystal. It is reasonable to think that two EL blue bands should be emitted from the C-ZnSe diodes,but the blue band of high energy was always absorbed.

测量了在77K和290K温度下,Au-ZnSe MIS,Au-ZnSe:Ga MIS,C-ZnSe:Ga MS和C-ZnSe MIS二极管的电致发光光谱,得到了以Au作势垒电极时通常有二个室温蓝带,而以C作势垒电极时只有一个室温低能蓝带。在77K—290K温度范围内,研究了C-ZnSe:Ga MS二极管在正向电压激发下的电致发光光谱随温度的变化。结果表明:室温低能蓝带的起因,在低温下可以归结为同时发射二个纵光学声子的自由激子的发射。文中指出,在C-ZnSe:Ga MS二极管上,观测不到室温高能蓝带,是由于晶体的吸收。由此可见,C-ZnSe:Ga MS结的室温蓝色电致发光的效率比Au-ZnSe MIS结的低得多。

 
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