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蓝色
相关语句
  blue
    Study on Blue and White Organic Light-Emitting Devices
    蓝色和白色有机电致发光器件的研究
短句来源
    BLUE ELECTROLUMINESCENCE IN REVERSE BIASED Zns: (Zn,Al)DIODES
    反向偏压下ZnS(Zn,Al)蓝色电致发光二极管
短句来源
    BLUE INJECTION ELECTROLUMINESCENCE OF C-ZnSe:Ga AT ROOM TEMPERATURE
    C-ZnSe:Ga的室温蓝色注入式发光
短句来源
    SPATIAL DISTRIBUTION OF BLUE ELECTROLUMINESCENCE IN ZnSe MIS DIODES
    ZnSe MIS二极管蓝色电致发光的空间分布
短句来源
    EFFECT OF ZnSe CRYSTAL QUALITY ON ITS BLUE ELECTROLUMINESCENCE
    ZnSe晶体质量对其蓝色电致发光的影响
短句来源
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  “蓝色”译为未确定词的双语例句
    Progress in Visible LED
    可见光LED的进展——发展趋势及蓝色LED(一)
短句来源
    Herein,this paper reports a double luminescent layer white OLEDs with a structure of ITO/CuPc/NPB/ADN∶TBPE(15 nm)/Alq3∶DCJTB(15 nm)/Alq3(35 nm)/LiF/Al.
    文章采用双发光层方法,即TBPe掺杂到ADN中作为蓝色发光层,DCJTB掺杂到Alq3中作为红色发光层,从而实现白光显示,器件结构为:ITO/CuPc/NPB/ADN∶TBPE(15nm)/Alq3∶DCJTB(15nm)/Alq3(35nm)/LiF/Al。
短句来源
    Photo assisted Growth of p ZnSe and Room Temperature EL of ZnSe Diodes
    光助MOCVD生长p-ZnSe及ZnSe p-n结室温蓝色电致发光
短句来源
    Lowev Applied Voltage Study of Blue-emitting ZnS: Zn,Pb Phosphor for FED and VFD
    用于FED和VFD的低压蓝色ZnS:Zn,Pb荧光粉的研究(英文)
短句来源
    Progress in the Study of High Brightness BlueGaN-based LEDs
    高亮度GaN基蓝色LED的研究进展
短句来源
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  blue
Determining the relative age of blue ballpoint ink by gas chromatography
      
A method for identifying the writing age of blue ballpoint pen ink has been established due to the imperative demand in forensic laboratories.
      
The content of the volatile components in blue ballpoint pen ink were determined by gas chromatography (GC).
      
Different kinds of blue ballpoint pen ink were detected and the repeatability of the experiment was investigated.
      
With increasing the length of the alkyl side chain, the UV and fluorescence spectra exhibit an obvious blue shift compared with those of the unsubstituted polymer.
      
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Diodes fabricated from ZnS crystals annealed in molten zinc containing 2% aluminium have been found to yield bright blue electroluminescence under reverse bias. Comparision of the electroluminescence and cathodoluminescence spectra for two type diodes.E and C together with electron microprobe and measurements of their current-voltage characteristics and brightness-current relationship in electroluminescence lead to an explanation of the production of the blue electroluminescence which is dependenton an aluminium-rich...

Diodes fabricated from ZnS crystals annealed in molten zinc containing 2% aluminium have been found to yield bright blue electroluminescence under reverse bias. Comparision of the electroluminescence and cathodoluminescence spectra for two type diodes.E and C together with electron microprobe and measurements of their current-voltage characteristics and brightness-current relationship in electroluminescence lead to an explanation of the production of the blue electroluminescence which is dependenton an aluminium-rich regioniswhich provides Vzn-Al complex] as luminescencecentres and additional donors to give a low resistivity region.

用在含有2%铝的锌中降阻的ZnS晶体制成发光二极管,在反向偏压下可以得到较亮的蓝色电致发光。比较两类二极管(E和C)的电致发光和阴极射线发光光谱。并且连同电子探针的分析,电致发光的电流-电压特性、亮度-电流特性测量,解释了蓝色电致发光的产生:它与富铝区有关,富铝区提供了V_(zn)—Al复合体形成蓝色发光中心并且提供了施主,降低了电阻。

The blue electroluminescence of C-ZnSe:Ga at room temperature is first reported,presented the measurement on the relative properties,and discussed the its luminous mechanism. A strong peak of the electroluminous spectra is at 4800A and a weak peak at 6300A. The self-activated emission at 6300A is reduced with increase of voltage,but the edge emission at 4800A increased. Therefore, the colours vary from red via yellow and green to blue.The bright blue light is observed in the bright room. Finally,the tentative...

The blue electroluminescence of C-ZnSe:Ga at room temperature is first reported,presented the measurement on the relative properties,and discussed the its luminous mechanism. A strong peak of the electroluminous spectra is at 4800A and a weak peak at 6300A. The self-activated emission at 6300A is reduced with increase of voltage,but the edge emission at 4800A increased. Therefore, the colours vary from red via yellow and green to blue.The bright blue light is observed in the bright room. Finally,the tentative idea of ZnSe varicoloured display is presented.

本文首次报导了C-ZnSe:Ga的室温蓝色注入式发光,测量了有关特性并讨论了发光机理。电致发光光谱具有强的4800A的蓝峰和弱的6300A的红峰。随着正向电压的增加,6300A的自激活发射相对减弱,而4800A的蓝色边缘发射逐渐增强。因此,当电压增加时,发光颜色由红色经黄色和绿色,逐渐变成纯蓝色。在明亮的房间里可以观察到鲜明的蓝色发射。文末提出了ZrSe多色显示的设想。

In recent years there has been considerable interest in blue EL emitted by forward-biased ZnSe MIS diodes1-5] . In our earlier work 6,7] , attention was directed to determining the origin of two emission bands in the blue at 4655 and 4770 A at room temperature. In the present paper the main interest is focused on the spatial distribution of blue EL in ZnSe MIS diodes.Nominally undoped ZnSe crystal, grown in this laboratory, were used in the present experiments. The boule crystals were grown from the vapour phase...

In recent years there has been considerable interest in blue EL emitted by forward-biased ZnSe MIS diodes1-5] . In our earlier work 6,7] , attention was directed to determining the origin of two emission bands in the blue at 4655 and 4770 A at room temperature. In the present paper the main interest is focused on the spatial distribution of blue EL in ZnSe MIS diodes.Nominally undoped ZnSe crystal, grown in this laboratory, were used in the present experiments. The boule crystals were grown from the vapour phase in sealed capsules containing slight excess of zinc 8,9] . Dice with dimensions of 3×3×1 mm3 were cut from the boules, and annealed in molten zinc at 850℃ for 100 h to reduce their resistivities to the range 1-10Ωcm. After polishing and etching, one large area face of the dice was then provided with an indium ohmic contact. A thick (500-1000 A) layer of ZnS was deposited on the opposite face by electron beam, and finally a circular gold electrode 1 mm in diameter was evaporated on top of ZnS layer.The photo of EL spots was taken from the surface of the dice carrying the gold contact with Model XJL-01 optical microscope. Model HHS-2X scanning electron microscope has been used to study the ZnSe diodes.With an optical microscope it was observed that the blue EL in ZnSe MIS diodes appears as a few scattered bright spots on the Crystal surface closed to the gold electrode. The number, size and intensity of the EL spots increase with the increase of the current density passing through the diode.Using scanning electron microscope, it was found that the electron beam-induced current image (EBICI) corresponded to the EL spots observed with optical microscope for ZnSe MIS diodes, as shown in Fig. 3. However both the absorbed electronic current image of low-resistivity ZnSe dice and the EBICI of ZnSe MS diodes (Fig.4) are homogeneous.On the ground of the above results, it is concluded that the distribution of resistivity of ZnSe dice in the crystal surface is homogeneous and the ZnSe crystal is flawless. The origin of nonuniformity of EBICI as well as of ELS must be attributed to the introduction of the insulating ZnS layer. Since in this case there is considerable mismatch of energy band,it is reasonable to think that more nonradiative recombination centers exist in the insulator-semiconductor interface of the ZnSe MIS diode.It was expected that if a homo-insulating layer is used in fabricating the ZnSe MIS diode, the homogeneity of EL emission could be improved. A new ZnSe MIS diode was made in which a ZnSe polycrystal film instead of a ZnS polycrystal film was used as an insulating layer. It was found that the ELS as well as the EBICI became densely packed spots in the diodes, as shown in Fig.5, and the ELS in the diodes appeared homogeneous when observed with naked eyes.We believe that perfectly uniform EL emission could be obtained from ZnSe MIS diode if a ZnSe epitaxial layer is used as the insulating layer.

本文研究了用ZnS多晶薄膜作绝缘层时制备的ZnSe MIS二极管,在正向电压激发下的蓝色电致发光的空间分布,在光学显微镜下观察到电致发光呈稀疏的点状分布。为了了解发光点的起因,用扫描电镜观测了二极管的二次电子像(SEI),束感生电流像(EBICI)和吸收电流像(AEI)。一个重要的发现是二极管的电致发光点(ELS)和EBICI有相当好的对应关系。文中指出了发光点的存在与绝缘层(Ⅰ)的引入有关。绝缘层一半导体(I-S)界面较大的能带失配和较差的结合,从而产生较多的无辐射复合中心,是产生稀疏发光点可能的原因。文中根据对发光点起因的分析,提出用ZnSe多晶薄膜取代ZnS多晶薄膜作绝缘层来铡备ZnSe MIS二极管。当用显微镜观察时,电致发光点呈密集分布,而用肉眼观察时是均匀的蓝色发光。文中还指出了进一步改进电致发光空间分布的可能途径。

 
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