Influence of Process Parameters on the Electrical Properties of N-type(Bi_2Te_3)_(0.90)(Sb_2Te_3)_(0.05)(Sb_2Se_3)_(0.05) Thermoelectric Materials by the Hot-pressing Method
Using DLTS method in conjunction with C-V method,the introduction rate andisochronal annealing behavior (from 400 K to 550 K) of E_3, E_4, E_5 and P_1, P_2, P_3 trapsinduced by 0.5 MeV,1 MeV and 5 MeV electron irradiation at room temperature in n-Type LPE GaAs layers have been studied.
The arbitrary shape,non dimensional Poisson equation,d 2 ψ d y 2+η-1y d ψ d y=1-Re -ψ (η=1￣3,0≤R≤1) of n type crystals is proposed; and its solution by perturbation method wis gioven.
The photovoltaic spectra of undoped n type InP single crystal (n=2×10~(16)cm~(-3))are measuredby equi-photon number method in the wavelength ranging from 0.75μm to band edge attemperatures of 298K, 77.4K, 50K, 20K, 13.7K.
Analyzed the troubles and wearing out happened in the usage of production, and compared ZZ2 with N rotors of the performance, considered that the ZZ2 rotor is better than type N;
This paper describes a method of transferring microwave power from type 14mm coaxial power standard to type N coaxial feedthrough or terminal power standards.
Since wavelet bases are not available for this general setting, the new idea used here is to apply the discrete Calderón-type reproducing formula associated to para-accretive functions developed in [14].
However, the ECV measurement of dopant concentration in the underlying lightly doped n-type substrate is significantly influenced by the upper heavily-doped layer.
Segmentation of p-n junction was performed by implantation of boron (for the n-type Ge) and mechanical grooving of the Li diffusion layer (for the p-type Ge).
Due to a far greater n type conductance inherent in the initial substances, the reactions are a model object for the development of methodology of the electrochemical approach.
This equation is also valid for other compounds of the RSi(OCH2CH2)3N type, in which silicon is bound to an sp2-carbon atom (R = CH = CH2, Ph, 2-furyl, 2-thienyl, etc.).
In the present paper, we get rid of this restriction: for an arbitrary type (n,K) (where n is the dimension of the complex tangent plane, and K is the real codimension), we construct a nice model surface.
In particular, we solve the problem of constructing a nondegenerate germ of a real analytic submanifold of a complex manifold of arbitrary given type (n,K) with the richest possible group of holomorphic automorphisms in the given class.
This method is well developed for surfaces of type (n,K), where K≤2; for such surfaces, tangent quadrics (i.e., surfaces determined by equations of degree 2) with a number of useful properties have been constructed.
A polymeric additive of the nonionogenic type N1 (3 × 106 g/mol) is proposed, which favors the deposition of chromium coatings that have good adhesion to the surface, do not crack, and have a thickness of several tens micrometers.
Using twisted Fock spaces, we formulate and study two twisted versions of the n-point correlation functions of Bloch-Okounkov, and then identify them with q-expectation values of certain functions on the set of (odd) strict partitions.
The operation adj on matrices arises from the (n - 1)st exterior power functor on modules; the analogous factorization question for matrix constructions arising from other functors is raised, as are several other questions.
The electrical conductivity, Hall coefficient, and magneto-resistance effect of n and p type InSb under temperatures 80-500°K have been measured, the impurity concentrations (after compensation) of samples varying in the range of 4×1013-7×1017cm-3.
This article describes the difference of mobility between N type indium antimonide ingot and the rectaugular sample, which was cut from the ingot on the position where we want to measure the mobility of ingot. This difference exceeds the error of the measurements. Therefore we think this is due to the introduction of the mechanical damage by cutting and grinding. And at the same time it is also due to the introduction of the thermal damage by the preparation of the electrical contacts. They influence the el...
The impurity-assisted indirect transition of n-type degenerate Germanium is a second order process. Electrons near the top of the valence band were excited to the (0, 0, 0) valley of the conduction band by the interaction with light and then scattered into the minimum of the conduction band by the short range field of impurity atoms. Using the second order perturbation theory, the absorption coefficient due to such processes was calculated. The fact that contributions of various donors are different and the...
n型
n-type
查询“n型”译词为用户自定义的双语例句
相关查询:
2008 CNKI－中国知网