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      n型
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  n-type
    NOTE ON THE IMPURITY-ASSISTED INDIRECT OPTICAL TRANSITION OF THE N-TYPE DEGENERATE GERMANIUM
    N型简并锗中杂质协助的间接光跃迁
短句来源
    INVERSION OF p-TYPE SILICON TO n-TYPE BY PULSED LASER IRRADIATION
    脉冲激光辐照p型硅单晶向n型转化
短句来源
    Photoluminescence Study on Annealing Behavior of n-Type Gallium Arsenide Irradiated with Neutrons
    中子辐照n型砷化镓退火特性的光致发光研究
短句来源
    STUDY OF NEUTRON IRRADIATION-INDUCED DEFECTS IN n-TYPE VAPOR PHASE EPITAXY GaAs LAYERS
    n型气相外延GaAs层中中子辐照感生缺陷的研究
短句来源
    THE UNIQUE BEHAVIOR OF FREE-CARRIERS IN N-TYPE DOPED NARROW-GAP HgCdTe
    窄禁带N型掺杂HgCdTe中自由载流子的奇特性质
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  “n型”译为未确定词的双语例句
    Infrared Spectra of n—type Monocrystal Silicon with High Resistivity
    高电阻率N型单晶硅的红外光谱
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    Theory of Conductivity and Impurity Band of n-InSb under Strong Magnetic Field
    强磁场下n型InSb杂质带及其电导的理论
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    INFLUENCE OF ANNEALING PROCESS AND OXYGEN CONTENT ON THE SUPERCONDUCTING TRANSITION OF Nd_(1.85)Ce_(0.15)CuO_(4+δ)
    后处理工艺及氧含量对n型氧化物超导体Nd_(1.85)Ce_(0.15)CuO_(4+δ)超导转变的影响
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    2-D R-N acousto-optic testability
    二维R-N型声光光学双稳态
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    A Newly Proposed Topological Index F 2 and Its Application in Correlation with Bond Energy of AB n Molecules
    一个新的拓扑指数F_2及其对AB_n型分子键能的研究
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  n-type
Since wavelet bases are not available for this general setting, the new idea used here is to apply the discrete Calderón-type reproducing formula associated to para-accretive functions developed in [14].
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However, the ECV measurement of dopant concentration in the underlying lightly doped n-type substrate is significantly influenced by the upper heavily-doped layer.
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Segmentation of p-n junction was performed by implantation of boron (for the n-type Ge) and mechanical grooving of the Li diffusion layer (for the p-type Ge).
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Some n-type semiconductor metal oxide sensors based on WO3 and In2O3 were studied in detecting unsymmetrical dimethylhydrazine (UDMH) vapors.
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One was from the orf215 region of the N-type mtDNA.
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         The electrical conductivity, Hall coefficient, and magneto-resistance effect of n and p type InSb under temperatures 80-500°K have been measured, the impurity concentrations (after compensation) of samples varying in the range of 4×1013-7×1017cm-3.
            文中报导了80—500°K间n型及p型InSb的电导率、霍尔系数及磁阻效应的测量,所用样品的杂质含量(补偿后)为4×10~(13)—7×10~(17)cm~(-3)。 由结果的分析得出InSb的本征载流子浓度、禁带宽度及电子迁移率等数值,讨论了电子的散射机构以及强磁场下磁阻与磁场强度成一次方正比关系的可能原因。
文摘来源
         This article describes the difference of mobility between N type indium antimonide ingot and the rectaugular sample, which was cut from the ingot on the position where we want to measure the mobility of ingot. This difference exceeds the error of the measurements. Therefore we think this is due to the introduction of the mechanical damage by cutting and grinding. And at the same time it is also due to the introduction of the thermal damage by the preparation of the electrical contacts. They influence the el...
            本文叙述由于发现区熔法制备的N型InSb单晶锭条的迁移率与锭条同处切下的矩形样品的迁移率之间的差别,超出测量误差范围之外,从而得到切割、研磨过程引入机械损伤及电极制备过程引入“热损伤”的看法,它们影响所研究的样品的电学性质。由电学性质的变化,测定了损伤深度约为0.2mm至0.4mm。由Read的位错散射理论所作的计算结果与实验结果比较,得到较好的符合,从而认为机械损伤主要是位错(即“位错裂隙”)的作用。同时,由实验结果,我们得到冷压焊金丝的电极制备方法比焊锡的好。
文摘来源
         The impurity-assisted indirect transition of n-type degenerate Germanium is a second order process. Electrons near the top of the valence band were excited to the (0, 0, 0) valley of the conduction band by the interaction with light and then scattered into the minimum of the conduction band by the short range field of impurity atoms. Using the second order perturbation theory, the absorption coefficient due to such processes was calculated. The fact that contributions of various donors are different and the...
            N型简并锗中杂质协助的间接光跃迁是个二级过程.价带顶附近的电子先受光的激发跃迁到导带的(0,0,0)谷,然后受杂质近程场的散射转入导带底.利用二级微扰理论计算了这种过程对光吸收系数的贡献.能说明不同的施主杂质的贡献是不同的,砷比磷的大.
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