n型 n-type(697)   n-type     K rm n-Type Equations for a Higher-order Shear Deformation Plate Theory and Its Use in the Thermal Postbuckling Analysis     高阶剪切变形板理论K■rm■n型方程及在热后屈曲分析中的应用 短句来源     Preparation and thermoelectric pro perties of n -type La_(0.9)Ni_xCo_(4-x)Sb_(12) compounds     N型La_(0.9)Ni_xCo_(4-x)Sb_(12)化合物的制备及热电性能研究 短句来源     Hall Measurements, FTIR and EPR for n-Type Boron and Phosphorus Co-doped Diamond Films     硼磷共掺杂n型金刚石薄膜的Hall效应、红外光谱和EPR研究 短句来源     The solution of n-type metal oxide crystals Poisson equation Ⅰ the solution of Poisson equation     N型金属氧化物泊松方程的解和费米能及E_f的变化范围 Ⅰ泊松方程解 短句来源     Research Situation about n-Type Thermoelectric Materials     n型热电材料的研究现状 短句来源 更多          “n型”译为未确定词的双语例句     The resistivities of samples decrease with the Ce content increasingwhen x=0.7～2.0, the increasing Ce content does not evidently decrease theresistivity when x>1.25;     (2) Ce 添加量在 x=0.1, 0.3 和 0.5时α 为正值，样品为 P 型传导，在 Ce 添加量高(x=0.7～2.0)时，样品的α 都为负值，样品为 N 型传导; 短句来源     (4) Ce0.5Co4Sb12 has thelowest thermal conductivity of 1.922～1.609 Wm-1K-1 at 100～500℃ lower thanthat of CoSb3 in the same group.     2.0)的 ZT 值随 Ce 含量的增加先升高后降低，其中 Ce1.0Co4Sb12 的最高, 并在100～500℃之间达到了 0.1675～0.374，其最大值为 400℃时的 0.374，该值是 N型样品中和本文实验中的最高 ZT 值; 短句来源     The problems of how to make full use of the resources superiority of the nonferrous metals, to develop the products of tin and antimony with high value and the lowest consumption of the nonrenewable resources must be resolved to keep the economy of our country sustainable development.     因而如何充分利用我国丰产有色金属的资源优势，节约一次资源，加速开发附加值高的产品，使得物尽其值，是保持我国经济的可持续性发展所必须解决的一个重要问题。 锑掺杂二氧化锡(antimony doped tin oxide，ATO)纳米粉体材料，是一种n型半导体透明导电材料。 短句来源     Both theoretical estimation and experimental measurements were done for the thermoelectric power generator module using p-FeSi2 and HMS as the P- and N-leg.     另外进行了以N型β-FeSi_2和P型HMS热电材料为基体的温差电池模型的理论计算和实际测量。 短句来源     The thermoelectric properties of La0.9NixCo4-xSb12 compounds indicate that properNickel substitute can reduce the electrical resistivity and the thermal conductivity.     实验表明，经 Ni 置换的La0.9NixCo4-xSb12 化合物全部表现为 n 型热电材料； Ni 的适量加入能进一步降低电阻率和热导率，达到优化热电性能目的。 短句来源 更多        查询“n型”译词为用户自定义的双语例句     我想查看译文中含有：的双语例句 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。   n-type Since wavelet bases are not available for this general setting, the new idea used here is to apply the discrete Calderón-type reproducing formula associated to para-accretive functions developed in [14]. 例句来源       However, the ECV measurement of dopant concentration in the underlying lightly doped n-type substrate is significantly influenced by the upper heavily-doped layer. 例句来源       Segmentation of p-n junction was performed by implantation of boron (for the n-type Ge) and mechanical grooving of the Li diffusion layer (for the p-type Ge). 例句来源       Some n-type semiconductor metal oxide sensors based on WO3 and In2O3 were studied in detecting unsymmetrical dimethylhydrazine (UDMH) vapors. 例句来源       One was from the orf215 region of the N-type mtDNA. 例句来源       更多                    The present paper is about the thin film SnO_2 which is manufuctured by evaporation method. The thickness of the sample is 5000(?), the carrier concentration measured by Hall effect is 4.99×10~(20) cm~(-3), the Hall mobility is 4.26 cm~2 V~(-1)S~(-1), the conductivety is 340.6 Ω~(-1)cm~(-1), the conductivity pattern is of n-type and the light transmissivity T (λ=0.589μm) is 85%. The carrier concentration is determined as the main factor for controlling conductivety properties. This film can be used as the t...             本文对用气态蒸发法制备的S_nO_2薄膜进行了基本物理特性的研究。试样薄膜的厚度为5000,利用霍耳效应测定其载流子浓度为4.99×10~(20)cm~(-3),霍耳迁移率为4.26cm~2V~(-1)S~(-1),导电类型为n型,用二探针法测定其电阻率为2.9×10~(-3)Ω·cm.光学测定其透过率T(λ=0.589μm)可达85%以上。由基本特性判定出支配S_nO_2薄膜电导特性的主要因素是载流子浓度,同时说明它可以用作电视技术中的透明电极材料,也可与其它半导体材料形成异质结制作太阳能电池。 文摘来源          The conditions of generated polyaniline film on platinum,glass car-bon and epitaxial silicon electrodes by using electrochemical polymericmethod and the relationship between electroactive and electrochromaticproperties for this film are discussed.Aniline film adherence at n~+/p-Siphotoanodes with Pt spettering layer is better than that at bare n~+/p-Si.It enhances the stability of photoanodes.             讨论了用电化学聚合法在铂、玻碳以及在p 型和n 型外延硅电极上生成聚苯胺膜的条件、膜的电活性与其变色性之间的关系。在有铂溅射薄层的n~+/p—Si光阳极上、膜的附着性较牢固、它使光阳极的稳定性得到改进。 文摘来源          This paper studies the properties of the mechanical deformation of N-type and P-type monocrystal silicon under external load. Moiré interferometry and speckle method are used to measure the deformation, and the results show that deformation decreases with the increase of load. This implies that there are lowenergy vacant layers in monocrystal silicon. The density of the silicon can be increased by compacting the vacant layers under external load.             本文的目的在于研究n型和p型硅单晶材料在外荷载作用下的变形性质。将云纹干涉和散斑干涉技术用于硅单晶材料变形性质的测定。试验结果表明,当载荷值小时,其变形量增大,而当载荷增加时,其变形增长量减小,这一现象证实了在硅晶体中存在着弱结合空位层,在外载荷作用下,排出晶体中的空位,致使晶体增密,或者说提高了硅单晶的密度所致。 文摘来源   << 更多相关文摘         相关查询: n型结构 n型硅的 n型电导 n带带型 n型方钴矿 n型函数 n型保护区 n型si n型热电偶 n型gap n型半导体 n型硅  对查询结果不满意

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