n型 n-type(697)   n-type     Numerical Simulations of Particle Distributions for Sulfur Doped n-type Diamond Thin Film in the Mixture of H_2/CH_4/H_2S/Ar     H_2/CH_4/H_2S/Ar气氛合成n型金刚石薄膜过程中硫分布的数值模拟 短句来源     Based on the theory of glow discharge, the angle distribution of electron and the recombination process are simulated by adopting Monte Carlo method. The doping process of n-type diamond film is investigated by this method for the first time.     本工作采用Monte Carlo方法，根据辉光放电理论，利用“伪碰撞”技巧和重整化方法深入研究了低温合成金刚石薄膜过程中电子的角分布以及电子的复合过程的影响，并且首次对以H_2S为掺杂源气体采用EACVD技术合成n型硫掺杂的金刚石薄膜的动力学过程进行了模拟。 短句来源     CdIn2O4(CIO)thin film,n-type ternary mental oxides thin film materials, has attracted much attention for its excellent optical and electrical properties and foreground for comprehensive application, and become a hot point in the research field of transparent conducting oxides(TCO) thin film.     CdIn2O4(CIO)薄膜是一种n型三元金属氧化物薄膜材料,由于其优异的光电性能和广泛的应用前景而倍受人们的青睐,成为当前透明导电氧化物(TCO)薄膜研究领域的热点之一。 短句来源     The Cu,Sn and Au films which take the N-type silicon as the substrate were bombarded with 2.0-4.5 MeV CI++ ion.     对以N型硅为基底的 Cu、Sn和 Au膜用能量 2．0～4．5MeV的 Cl＋＋离子进行了 轰击。 短句来源     Cd2SnO4 (CTO) films prepared by rf reactive sputtering from a Cd-Sn alloy target in Ar-O mixtures was found to be an n-type, defect and degenerate semiconductor in which oxygen vacancies provide the donor states and free-carrier concentration is up to 4.46×1026 m-3. The films were annealed at temperature up to 500℃ in stable Ar flow.     射频反应性溅射Cd-Sn合金靶沉积的Cd_2SnO_4(简称CTO)薄膜是n型缺陷简并半导体,并以氧空位作为施主态,载流子浓度高达4.46×10~(26)m~(-3)。 短句来源 更多          “n型”译为未确定词的双语例句     Using these silicon films as the intrinsic layer,p-i-n solar cells were prepared on SnO2 substrates. The open circuit voltage(Voc) was 0.891V.     以这部分材料作为太阳电池的本征层,在SnO2衬底上制备了p-i-n型太阳电池,电池的初始开路电压(Voc)达到了0.891V。 短句来源     In order to get refrigerating materials with excellent refrigerating effect, Bi and Te are used making Bi_2Te_3 by powder metallurgy method.     本文以Bi和Te的单质为原料,用粉末冶金的方法压制成Bi_2Te_3N型半导体制冷材料。 短句来源     Characteristics of Current Transportation from n-Si into Lamp Heating Rapid Thermal Nitridation Ultra-thin SiO_2 Films     从n型硅到RTN超薄SiO_2膜的电流传输特性 短句来源     X-ray diffraction test showed that N、P type materials were solid solutions based on Bi_2Te_3 and Sb2Te3 respectively.     X－ray测试结果表明，得到的N型材料是以Bi2Te3为基的固溶体，而P型材料是以Sb2Te3为基的固溶体。 短句来源     It is discussed that the capacityvoltage (CV) characteristics of the metalferroelectricsemiconductor (MFS) structure using semiconductor theory. The result shows that on the nSi,the CV curve of ideal MFS structure is counter clockwise and CV curve of carrier injected MFS structure is clockwise,which is agreement with the experiment.      用半导体理论讨论了金属铁电薄膜半导体（MFS）结构的电容电压（CV）特性，其结果表明：在n型Si基片上，理想MFS结构的CV曲线为逆时针回滞，有载流子注入的MFS结构的CV曲线为顺时针回滞，这与实验结果是一致的． 短句来源 更多        查询“n型”译词为用户自定义的双语例句     我想查看译文中含有：的双语例句 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。   n-type Since wavelet bases are not available for this general setting, the new idea used here is to apply the discrete Calderón-type reproducing formula associated to para-accretive functions developed in [14]. 例句来源       However, the ECV measurement of dopant concentration in the underlying lightly doped n-type substrate is significantly influenced by the upper heavily-doped layer. 例句来源       Segmentation of p-n junction was performed by implantation of boron (for the n-type Ge) and mechanical grooving of the Li diffusion layer (for the p-type Ge). 例句来源       Some n-type semiconductor metal oxide sensors based on WO3 and In2O3 were studied in detecting unsymmetrical dimethylhydrazine (UDMH) vapors. 例句来源       One was from the orf215 region of the N-type mtDNA. 例句来源       更多                    Dense and rigid n-CdS films are deposited by electron beam technology. The morphology of these films prior and after etching has been examined by scanning electron microscope. Having improved the structure of the evaporating chamber the sputtering phenomenon of the CdS grains has not been observed. Diffusion of Cd++ and Gu+ ions towards them opposite sides from the heterojunction has been determined by ionic probe method. The main characteristics of cells made from these evaporated films are: Isc -25mA/cm2,...             通过用电子枪蒸发新技术,成功地制备出致密、牢固、耐腐蚀和纯度高的n-型CdS膜。用扫描电子显微镜对CdS膜腐蚀前后的形貌进行了观察比较;采用离子探针技术对成结后的表面层Cd~#与Cu~+的分布进行了分析。采用此种镀膜法,通过结构参数的改进,避免了J.P.Sorbier指出的粒子飞溅现象,并在几种基板上获得I_(sc)、V_(oc)、FF和η的最佳值分别是:25mA/cm~2、480mV、70％和5—6％(AM1)。电子枪技术是沉积CdS膜的较好方法。 文摘来源          In this paper,it is reported that indium tin oxide (ITO) thin films were prepared by an electron beam technique.As these films are degenerate n-type semiconductors,they are used as a window material in heterojunction solar cells.The effect of heat treatment (300℃) in various environments.(H2,N2,Ar or air) on the electrical and optical properties of ITO prepared films has been investigated.As the resistivity is decreased and optical transparency is increased by heat treatment in H2 or Ar especially.A sheet r...             用电子束蒸发制得了透明导电的ITO(indiumtin oxide)薄膜(厚3000—5000(?)),其方块电阻为4.5—20Ω/□,波长7000(?)时的透光率为80—95％。用x-线衍射分析方法测定了膜的组成与结构,用扫描电镜(SEM)观察了薄膜的形貌。薄膜的颗粒度为1—3μm,载流子浓度(N)为3.9×10~(19)cm~(-3),霍耳迁移率(μ_H)为94cm~2·V~(-1)·s~(-1),电阻率(ρ)为4.0×0~(-4)—2×10~(-3)Ω·cm,E_g为3.4eV。测得的Hall电压是负值,说明它是一种n型半导体。 文摘来源          In this paper,a new preparation method for SnO2 transparent electro-conductive film atmospheric evaporation-thermal decomposition from aqueous solution,was presented.Some of its properties were characterized.It is suggested that this method is more simple in preparation of the transparent electro-conductive film of SnO2 on surfaces with any shapes in comparison with a number of known methods.The results obtained with XDS,AES and ESCA indicated that a oxygendefected SnOj-,film with n-type semiconductor was f...             本文报道了一种制备SnO_2透明导电薄膜的新方法——水溶液常压蒸发热解法并研究了该薄膜的性能。这种方法比喷涂热解法还要简单,而且可蒸镀在任意形状的表面上。测试表明,本法制备的SnO_2薄膜与喷涂热解法一样,在形成薄膜过程中也形成缺氧的SnO_(2-x)结构,因此具有n型半导体性质。SnO_2薄膜在可见光范围内具有减反射及透光性能;在红外光范围内具有反射及降低发射率的性能。 文摘来源   << 更多相关文摘         相关查询: n型结构 n型硅的 n型电导 n带带型 n型方钴矿 n型函数 n型保护区 n型si n型热电偶 n型gap n型半导体 n型硅  对查询结果不满意

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