n型 n-type(697)   n-type     A Liquid Junction Photoelectrochemical Cell with N-Type Semiconductor CdS_(1-x) Se_x     n型半导体CdS_(1-x)Se_x液结光电池 短句来源     Liquid Junction Photoelectrochemical Cells with n-Type Cds_1-αSeα Electrodes Ⅱ.Photoelectrochemical Properties of n-CdS0.9 Se0.1 Electrode     n型半导体CdS_(1-a)Se_a液结光电池Ⅱ,n-CdS_(0.9)Se_(0.1)电极的光电化学性能 短句来源     THE STUDIES OF N-TYPE SINGLE CRYSTAL CADMIUM TELLURIDE BASED PHOTOELECTROCHEMICAL CELL(I) THE SURFACE ETCHING AND REDOX COUPLE CHOOSING     N型单晶碲化镉光电化学电池的研究——(Ⅰ)表面刻蚀与氧化还原偶选择 短句来源     An Investigation of n-Type Si Contact Electrode     n型Si接触电极系统研究 短句来源     Preparation of Polyaniline Composite Electrode by N-type Doping     n型掺杂聚苯胺复合电极的研制 短句来源 更多          “n型”译为未确定词的双语例句     Carrier Trapping Effects in a-Si:H p-i-n Solar Cell Structure──a Study of Stability in a-Si:H Solar Cells     a－Si：Hp－i－n型太阳能电池中的载流子俘获效应──a－Si：H太阳能电池稳定性研究 短句来源     Research on KSDK-15N mine protable switch with flamepro of and multiple - function reversible     KSDK-15N型矿用隔爆多功能可逆手提式开关的研制 短句来源     p-n GaInP_2/GaAs tandem solar cells     p-n型GaInP_2/GaAs叠层太阳电池研究 短句来源     Protect the application on the short circuit in vertical difference of optic fibre of model LFP-943N     LFP-943N型光纤纵差保护在短线路上的应用 短句来源     Electrochemical Preparation and Characterization of Bi_2Te_(3-y)Se_y Thermoelectric Thin Films     n型Bi_2Te_(3-y)Se_y温差电材料薄膜的电化学制备及表征 短句来源 更多        查询“n型”译词为用户自定义的双语例句     我想查看译文中含有：的双语例句 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。   n-type Since wavelet bases are not available for this general setting, the new idea used here is to apply the discrete Calderón-type reproducing formula associated to para-accretive functions developed in [14]. 例句来源       However, the ECV measurement of dopant concentration in the underlying lightly doped n-type substrate is significantly influenced by the upper heavily-doped layer. 例句来源       Segmentation of p-n junction was performed by implantation of boron (for the n-type Ge) and mechanical grooving of the Li diffusion layer (for the p-type Ge). 例句来源       Some n-type semiconductor metal oxide sensors based on WO3 and In2O3 were studied in detecting unsymmetrical dimethylhydrazine (UDMH) vapors. 例句来源       One was from the orf215 region of the N-type mtDNA. 例句来源       更多                    This paper reports the preparation and properties of the epitaxial Si-film on (100) spinel grown by Czochralski method, the electrical properties of n-type doped film are good. It does not degrad after thermal oxidation treatments, The Hall mobility is 300cm2/volt. sec. (the highest 350). The carrier concentration is kept at 10 15 -10 16/cm3. The film thickness is 1-2 u.             本文叙述了在直拉法生长的尖晶石上外延硅膜的制备与性质。已在直拉法尖晶石 （１００）面衬底上生长出一批电学性能较好的Ｎ型单晶硅膜，并进行了热氧化稳定性试 验，Ｎ型掺杂的硅膜其霍尔迁移率一般在３００厘米２／伏·秒左右．最高达３８０厘米２／伏 ·秒。载流子浓度控制在 １０１５～１０１６／厘米３硅膜厚度在 １—２微米。 文摘来源          A sucessful reproducible method of preparation of semiconductor photoelectrode which was used as photoanode in the PEC cell for solar energy conversion has been described.Titanium dioxide film was thermally formed in the titanium plate in an electric furnace and was reduced in the argon or hydrogen atmosphere for obtaining a n-type semiconductor photoelectrode. The photoelectrochemical properties and the spectrum response of the PEG cell consisted of titanium dioxide was investigated, and the evolution of h...             本文叙述了用高温电炉法对钛片进行热氧化制备二氧化钛,并通过氩气或氢气热处理活化形成n-型半导体的二氧化钛光电极。此法优点是制备条件易于控制,结果易于重复。利用这种光电极组成了光电化学电池。研究了其光响应及光谱响应,并制得了氢。 文摘来源          The Ga1-xAlxAs/GaAs Multilayer structure is formed by liquid phase epitaxy with and without back etching, with the x value being controlled within the rang of 0.8-0.9. The carrier concentration of both p-GaAs and p-Ga1-xAlxAs layers is 1 -3× 1018 cm-3 and thier thickness is about IMm. The ohmic contacts are made by AuGe-Ni for n-type GaAs and CrAu or CrAuZn alloys for p-type GaAlAs respectively. The ohmic contacts on both sides are alloyed in a single run at 430-450℃ for 45 sec depending on the juncting dep...             用平衡外延生长和反腐蚀生长法制备了Ga_(1-x)Al_xAs/GaAs太阳电池的外延片。x值能控制在0.8—0.9,p-Ga_(1-x)Al_xAs与p-GaAs层浓度在1—3×10~(18)cm~(-3),厚度均小于1μm。用此外延片以AuGeNi,CrAu或CrAuZn分别作n型和p型的欧姆接触,在430—450℃之间,n型与p型一起合金化,时间～45秒。在不是最匹配的抗反射层条件下,AM1最高效率为17.8％,一般效率为13—15％。与已报道的数据相比,电池的短路电流还偏低,开路电压波动较大,短波部份的光谱响应也差。对比平衡生长与反腐蚀生长的p-n结特性,它们基本上相近,而反腐蚀重生长法略好一些。 文摘来源   << 更多相关文摘         相关查询: n型结构 n型硅的 n型电导 n带带型 n型方钴矿 n型函数 n型保护区 n型si n型热电偶 n型gap n型半导体 n型硅  对查询结果不满意

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