n型 n-type(697) n type(255)   n-type     THE DIFFUSION LENGTH OF MINORITY CARRIERS IN N-TYPE SILICON MEASURED WITH A SURFACE BARRIER DETECTOR     用面垒探测器测定n型硅中少数载流子的扩散长度 短句来源     Formation of ohmic contacts on n-type GaAs by laser beam alloying     用激光合金化在n型GaAs上制作欧姆接触 短句来源     EFFECT OF COMPONENTS ON THE OHMIC CONTACT RESISTIVITY OF N-TYPE GaAs     N型GaAs欧姆接触中各组份对比接触电阻的影响 短句来源     Ohmic Contacts on N-type GaAs Produced by Pulsed Laser Irradiation     用脉冲激光束在N型GaAs上制备欧姆接触 短句来源     Electrical Properties of Platinum and Palladium in n-type Silicon     n型硅中铂和钯的电学性质 短句来源 更多          n type     OSCILLATOR STRENGTH OF INTERSUBBAND TRANSITION IN N TYPE AlAs/GaAlAs QUANTUM WELL FOR THE NORMAL INCIDENT ABSORPTION     n型AlAs/GaAlAs量子阱子带间正入射吸收跃迁振子强度 短句来源     The experimental rules of thickness effect on N type metal oxide gas sensing thin films are presented.     介绍了N型金属氧化物气敏薄膜厚度效应的实验规律. 给出了响应时间和恢复时间随膜厚及气体浓度变化的规律; 短句来源     The DX Center in n Type Ⅲ Ⅴ Compound Semiconductors     n型Ⅲ-Ⅴ族化合物半导体中的DX中心 短句来源     DEEP ELECTRON STATES IN n TYPE Al DOPED ZnS1-xTex GROWN BY MOLECULAR BEAM EPITAXY     分子束外延生长的n型Al掺杂ZnS_(1-x)Te_x深中心研究 短句来源     2, We successfully achieved a pn junction structure in GaN epilayer by implantation of Mg ions and a subsequent annealing in N2 atmosphere to transfer GaN from n type to p type with a hole concentration of 2.70 X 1017/cm3.3 , The process and electrical properties of MSM photoconductive and Schottky ultraviolet detectors based on the GaN epilayer grown on sapphire substrates and silicon substrates were investigated respectively.     2、我们利用离子注入的方法对本系统外延生长的GaN薄膜进行Mg掺杂，通过在N_2气氛中退火，使得掺杂区域的本征n型GaN转为p型，空穴浓度为2.70×10~(17)/cm~3，从而形成pn结。 短句来源 更多          “n型”译为未确定词的双语例句     A Study of Physical Characteristics of the Metal-n-GaAs Interfaces     金属-n型GaAs界面物理特性研究 短句来源     STUDY OF HEAVILY N—DOPED MICROCRYSTALLINE —AMORPHOUS Si:H FILMS     高电导率N型微晶Si:H薄膜的研制 短句来源     Ohmic Contact On High Resistivity N-Si     高阻N型硅的欧姆接触 短句来源     THE INFLUENCE OF SURFACE ACCUMULATION LAYER ON TRANSPORT AND RECOMBINATION PROPERTIES IN N-Hg_(1-x)Cd_xTe     表面累积层对N型Hg_(1-x)Cd_xTe输运特性及复合特性的影响 短句来源     Some Aspects to Improve the PTC Effect in Donor-Dopped BaTiO_3 Thermistor     提高n型BaTiO_3热敏电阻PTC效应的途径 短句来源 更多        查询“n型”译词为用户自定义的双语例句     我想查看译文中含有：的双语例句 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。   n-type Since wavelet bases are not available for this general setting, the new idea used here is to apply the discrete Calderón-type reproducing formula associated to para-accretive functions developed in [14]. 例句来源       However, the ECV measurement of dopant concentration in the underlying lightly doped n-type substrate is significantly influenced by the upper heavily-doped layer. 例句来源       Segmentation of p-n junction was performed by implantation of boron (for the n-type Ge) and mechanical grooving of the Li diffusion layer (for the p-type Ge). 例句来源       Some n-type semiconductor metal oxide sensors based on WO3 and In2O3 were studied in detecting unsymmetrical dimethylhydrazine (UDMH) vapors. 例句来源       One was from the orf215 region of the N-type mtDNA. 例句来源       更多             n type Unusually high (several units) transfer ratio was observed for the monolayer B when preparing the structures of (AB)n type. 例句来源       The existence of two solitons of the Alfvén type is indicated. 例句来源       The emission of atomic and complex nitrogen ions, which are the main impurity determining the n type conduction of silicon carbide, is investigated. 例句来源       Due to a far greater n type conductance inherent in the initial substances, the reactions are a model object for the development of methodology of the electrochemical approach. 例句来源       This equation is also valid for other compounds of the RSi(OCH2CH2)3N type, in which silicon is bound to an sp2-carbon atom (R = CH = CH2, Ph, 2-furyl, 2-thienyl, etc.). 例句来源       更多                    This article describles that N-type indium antimonide single crystal and twin crystal involving larg grain samples (n≈1.23 × 1014-2.40 × 1015 cm-3, μe≈ 5.15 X 155 2.10 × 105 cm2/V-sec) are converted into P-type samples by heat treatment in different kinds of gases at 500℃. During this heat treatment, if the temperature rises to above the melting point, the thermal acceptors in the P-type sample disappear, and the sample is converted back to N-type. If this converted N-type sample is again heated at 500℃, it...             本文叙述N型InSb单晶和含有大晶粒的双晶样品(n～1.23×10~(14)—2.40×10~(15)cm~(-3),μ_e～5.15×10~5cm~2/V·sec—2.10×10~5cm~2/V·sec),在500℃下、不同气氛中进行热处理产生受主,引起热转换,而整块地变为P型样品,当继续热处理使温度达到熔点以上时,这种P型样品中的热受主消失了,而转变回到原来的N型样品;若把这种N型样品再在500℃下进行热处理,则它又整块地变为P型样品。我们对这一新发现的过程进行了一些研究,发现这种现象与材料的不同制备条件和热处理时的环境气氛不同有关,并对不同气氛下的循环热转换过程和熔化效应作了论述。 在500℃下进行热处理所引起的热受主浓度与热处理时间的关系中,发现在热处理起始的一段时间内,热受主形成速率较大;随着热处理时间的增加,热受主浓度达到一个饱和值;若再加长热处理时间,则热受主浓度开始下降,这现象与硅的热处理现象相似。 根据实验得到的新结果进行分析,认为这种热处理现象不象是外来因素的影响所引起的,而是一种原来存在于InSb中的内在因素所起的作用,推测可能是与氧和氢有关。最后我们... 文摘来源          We have produced ohmic contact on the surface of n-GaAs using a pusled Q-Switched ruby laser (A=0.6943m), a pulsed Q-Switched YAG laser(A=1.06m)and a frequency doutled pulsed YAG laser (A=0.53m). The specific contact resistance of alloyed Au-Ga-Ni contacts has been measured on the surfaces of n-GaAs. The experimental results show that the use of laser alloying forms more uniform ohmic contacts. The contacts possess electrical properties and surface conditions which are superior to those formed by convention...             我们采用了脉冲Q开关红宝石激光以(λ=0.6943微米)、脉冲Q开关石榴石激光(λ=1.06微米)和倍频的脉冲石榴石激光(λ=0.53微米)产生n型GaAs表面的欧姆接触;测量了n型GaAs上AuGaNi合金的比接触电阻.实验表明用激光合金化形成了均匀的欧姆接触,这种接触具有比通常的体加热合金化更优越的电学性质和表面状况. 文摘来源          This article is to report the results of study of the properties of the amorphous silicon film (GD-aSiHx) prepared by the glow discharge technique by measuring it electrical conductivity and photoconductivity. The experimental results indicate that the GD-aSiHx material prepared has obvious photoconductive effect. Under illumination, its electrical conductivity increases by 2 orders of magnitude. From the absorption and spectral response curve of the GD-aSiHx, the mobility gap Eg of 1.65 eV is obtained. Str...             本文报道了通过电导和光电导的测量,了解用硅烷辉光放电工艺制备非晶态硅薄膜(简称GD-aSiHx)的基本特性。试验结果指出,我们制备的GD-aSiHx本征薄膜具有显著的光电导效应,光照下可使其电导率增加两个数量级。从吸收系数和光谱灵敏度曲线得到GD-aSiHx的迁移率隙Eg为1.65eV。在Eg1.65eV处有强光响应,而在定域态1.65—0.75eV之间有弱光响应,低于0.75eV无光响应,足见我们制备的GD-aSiHx为弱n型半导体。发现光生载流子移向Ec时,双分子复合作用占主导地位。所进行的低温和高温电导和光电导测试结果表明,GD-aSiHx的低温电导随温度下降而降低,并与温度倒数1/T呈函数关系。电导由激活过程逐渐变为非激活过程,激活能为0.66—0.73eV。高温电导曲线表明电导随温度升高而增大,但电导与温度呈非线性关系,说明GD-aSiHx的电子传导是通过跃迁输运的。对低温下光电导用R_D/R_L表示时(R_D是暗阻,R_L是光阻),当T=293-193K,(R_D/R_L)低温:(R_D/R_L)室温≈10;T<193K,R_D≈R_L;高温下光电导R_D/R_L随温度升高而降低;当T... 文摘来源   << 更多相关文摘         相关查询: n型结构 n型硅的 n型电导 n带带型 n型方钴矿 n型函数 n型保护区 n型si n型热电偶 n型gap n型半导体 n型硅  对查询结果不满意

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