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近似模型
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  approximate model
    A New Approximate Model for Efficient Implementation of EM Scattering and Radiation by PEC Objects
    快速分析理想导体电磁散射及辐射的新近似模型
短句来源
    A test and a calculation were performed on parameters for an approximate model of double diffused transistors using an automatic impurity profiler.
    本文通过双扩散晶体管近似模型,运用自动杂质剖面仪,对12个参数进行了测试和计算。
短句来源
    The capacitance between gate and source of a-Si TFT consists of not only parasitic capacitance Cgspdue to overlaps between gate and source electrodes ,but also intrinsic capacitance Cgsi between the channel at the source sied and gate electrode. The formula for Cgsi is derived from gradual channel approximate model.
    a-SiTFT栅源电容Cgs不仅为栅源电极交叠所产生的寄生电容Cgsp,还应包括栅电极与源端沟道间的本征电容Cgsi.用缓变沟道近似模型推导了Cgsi的表达式。
短句来源
    A new approximate model is proposed for the efficient implementation of the electromagnetic scattering and radiation by perfectly electrical conducting (PEC) objects using the method of moments (MOM).
    本文提出一种快速分析理想导体电磁散射及辐射问题的新近似模型 .
短句来源
  “近似模型”译为未确定词的双语例句
    Analytic Model of MOSFET Under Positive Substrate Bias
    衬底正偏的MOSFET的近似模型
短句来源
    Constant Voltage Model of Vertical Symmetry Double-gate MOSFET
    纵向对称双硅栅薄膜MOSFET的等电位近似模型
短句来源
    The OTF of the atmosphere imaging system is calculated and the effects of the scale of turbulence on the integral resolution are analyzed by using the approximate Andrews model of refractive index fluactuation.
    运用湍流大气的Andrews折射率谱近似模型从理论上分析了大气成像系统的光学传递函数并研究了有限湍流尺度 (湍流内、外尺度 )对湍流大气中成像系统光学分辨率的影响。
短句来源
    The system identification was done by the performance index of ISE, and the parameter tuning was made by the performance index of ITAE, The pure-lags were approximated by one rank and two rank-pade, respectively.
    系统辨识的性能指标采用误差平方和 ,参数整定的性能指标采用绝对误差乘时间 ,系统的纯滞后分别用一阶、二阶不对称和二阶对称 pade近似 ,模型参数辨识和滤波器设计采用改进的NLJ法 ,参数整定采用IMC整定的方法。
短句来源
    It was applied to calculate the temperature of each heat source and its contributions to other sources. The superposition principle is applied.
    用该近似模型来计算各热源的温度值和对其他热源的温度贡献值,然后用叠加原理计算出VLSI芯片上各点的温度值.
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  approximate model
On the basis of an approximate model of filtration with drainage washings of a soil layer with a water-impermeable base [1], shown schematically in Fig.
      
In [1], the present author investigated an approximate model of two-dimensional flow in the case of leaching of soil in the presence of an impermeable layer when the depression curve is replaced by a fixed horizontal boundary.
      
An approximate model of the flow is constructed and an analytic solution is obtained for the location of the boundary of the multicycle jet.
      
A brief description is given of the approximate model for the calculation of temperature fields, which simplifies the processing of experimental data
      
Theoretical models of heat transfer by radiation through a vapor gap under conditions of film boiling of liquid are treated, namely, a general wave model for a gap of arbitrary thickness and an approximate model of geometrical optics.
      
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This paper presents the model of approximate broken-line elastance for the step recovery diode (SRD) in case where transition time is not zero (t(?)≠0). Frequency multipliers of arbitrary nonlinear capacitor with an idler are generally considered, and explicit and useful formulae are given. In a detailed investigation of frequency multipliers of the SRD without idlers, we have derived the calculated formulae relating the efficiency and equivalent impedances of the multipliers with arbitrary transition time (t(?))...

This paper presents the model of approximate broken-line elastance for the step recovery diode (SRD) in case where transition time is not zero (t(?)≠0). Frequency multipliers of arbitrary nonlinear capacitor with an idler are generally considered, and explicit and useful formulae are given. In a detailed investigation of frequency multipliers of the SRD without idlers, we have derived the calculated formulae relating the efficiency and equivalent impedances of the multipliers with arbitrary transition time (t(?)) and current cut-off angle of the SRD. The results of these experiments also demonstrate that excellent efficiency and stability may be obtained with SRD high-order multipliers designed according to conclusions in this paper.

本文提出阶跃管在阶跃时间t_7≠0时的倒电容折线近似模型;分析了存在空闲情况下任意变容管倍频器的一般问题,导出了简明的结果。详细讨论了阶跃管无空闲倍频器,得到了倍频器的效率和等效参数同任意阶跃时间及电流截止角的函数关系。实验结果证明,按文中结论设计成的阶跃管高次倍频器可获得较好的效率和稳定性。

A test and a calculation were performed on parameters for an approximate model of double diffused transistors using an automatic impurity profiler. The experiment showed that the estimated neutron damage constant of the transistor coincided well with the result when the effect of reactor-induced gamma-ray was removed. This is, no doubt, beneficial to the control of device hardening technology.

本文通过双扩散晶体管近似模型,运用自动杂质剖面仪,对12个参数进行了测试和计算。实验证明,当去除了反应堆伴生γ射线的影响后,所得到的晶体管中子损伤常数与结果有较好的吻合,这对控制加固工艺无疑会有不少裨益。

The optical-phonon deformation potentials of cubic semicoductor GaP and GaAs havebeen investigated by LMTO-ASA approach within the frozen-phonen approximation.Some of thedifferent treatments in frame of LMTO method are examined and compared with the nonlocalempirical pseudopotential method (NEPM).The investigation indicates that the results of fro-zen-potential.model,in which the displacement of empty spheres is synchronized with the vibra-tion of atomic spheres, are closest to that of the NEPM in a variety...

The optical-phonon deformation potentials of cubic semicoductor GaP and GaAs havebeen investigated by LMTO-ASA approach within the frozen-phonen approximation.Some of thedifferent treatments in frame of LMTO method are examined and compared with the nonlocalempirical pseudopotential method (NEPM).The investigation indicates that the results of fro-zen-potential.model,in which the displacement of empty spheres is synchronized with the vibra-tion of atomic spheres, are closest to that of the NEPM in a variety of LMTO treatments.Theagreement between this approach and experiment is not inferior to one of the NEPM,thus pro-viding the optical deformation potentials of the zinc-blende semiconductors with a feasible abinitio calculation.

本文采用LMTO-ASA能带计算方法,以冻结声子的近似模型,计算了GaP和GaAs的长波声子光学模单声子形变势.讨论了几种不同的计算方案并同非局域赝势法(NEPM)的计算结果进行了比较.研究表明,LMTO-ASA的各计算方案中与NEPM方法的结果最为接近的是空球跟随相应原子球位移的冻结势计算方案,其结果与实验结果的符合程度不亚于NEPM方法.从而为闪锌矿结构半导体长光学声子形变势的计算提供了一种可行的从头计算方法.

 
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