助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   束流 在 材料科学 分类中 的翻译结果: 查询用时:0.019秒
图标索引 在分类学科中查询
所有学科
材料科学
核科学技术
物理学
无线电电子学
金属学及金属工艺
仪器仪表工业
工业通用技术及设备
更多类别查询

图标索引 历史查询
 

束流
相关语句
  ion beam current
    The experiment results suggest that the reactive ion beam etching using CHF3 will get high etching selectivity(2.5∶1 of silicon oxide film and 1∶1 of hafnium oxide film) under low ion energy and ion beam current and low accelerate voltage.
    实验结果表明:以三氟甲烷为工作气体的反应离子束刻蚀,在较低离子能量、束流和加速电压的条件下,就可对氧化硅薄膜和氧化铪薄膜实现较高的刻蚀选择比(分别为2.5∶1和1∶1).
短句来源
    The crystallization temperature of amorphous Ni P alloy film decreased with the increase of bombardment energy and current of nitrogen ion be am. The influence of ion beam current on crystallization temperature was greater than that of accelerated voltage.
    随低能氮离子束的轰击能量和束流的增大 ,Ni P非晶镀层中Ni和Ni3P的晶化温度下降 ,束流对晶化温度的影响比加速电压的影响大。
短句来源
    The increase of microhardness of the films reduced with the increase of ion beam current. The microhardness increased obviously wit h the increase of the accelerated voltage of nitrogen ion. Effected by the nitro gen ion bombardment at 4 000 V accelerated voltage, the microhardness of the fil ms reached HV 2 131 which is increased obviously than that obtained by normal an nealing.
    随束流的增加 ,显微硬度增加减缓 ,而随氮离子束加速电压增加 ,显微硬度增加明显 ,在4 0 0 0V加速电压的氮离子束轰击下 ,显微硬度达到HV 2 131,比一般退火晶化方法所得到的显微硬度显著提高。
短句来源
  “束流”译为未确定词的双语例句
    The influence of current density, ion energy, the ratio of area Ti to Si on the microhardness of TiN/Si3N4 films were studied.
    研究了辅助束流、轰击能量和Ti/Si靶面积比等工艺参数对TiN/Si3N4纳米复合超硬薄膜性能的影响。
    Analyzing of defectiveness for the TiN thin film of different parameters on Si substrate by using PAT (positron annihilation technique) technique
    Si基底上TiN膜不同参数(分压,膜厚,束流强度)下的PAT缺陷分析
    After analyzing the influence of all kinds of technologic conditions to refractive index of TiO2 film, optimal technologic conditions is that substrate is 200 ℃, the chambervacuum is 2× 10-2 Pa, the deposition rates is 0.2nm/s.
    分析了各种工艺条件对氧化钛薄膜折射率的影响,得到制备氧化钛薄膜的最佳工艺参数:基片温度200℃、真空度2×10~(-2)Pa、沉积速率0.2nm/s、电子枪束流100mA。
短句来源
    The optimal deposition parameters were found to be: substrate temperature 750℃and flux 40mA.
    优化的工艺条件为:沉积温度750℃,蒸发束流40mA。
短句来源
    The TiNi shape memory alloy samples were implanted by 75keV N + with doses of 3×10 17 N + cm -2 and 8×10 17 N + cm -2 (dose rate16.3μA /cm 2 )at 200℃during the ion implantation. The samples were analyzed by X-ray di ffraction(XRD)and X-ray photoelectron spec-troscopy(XPS).
    对TiNi形状记忆合金N+离子注入后进行了XRD分析以及XPS分析。 N+离子注入的能量为75keV,束流为16.3μA/cm2,注量分别为3×1017N+cm-2和8×1017N+cm-2,注入过程中温度低于200℃。
短句来源
更多       
查询“束流”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  ion beam current
The source ensures an argon ion beam current of up to 80 mA at a discharge current and voltage of 1 A and 115 V, respectively, and a pressure of 1.5 × 10-2 Pa in the chamber.
      
Depending on the geometric parameter la (the anode length to diameter ratio) and pressure, maxima are observed in the discharge current and in the ion beam current extracted from an aperture at the center of the cathode.
      
Composite layers made in sapphire by implantation of 40-keV Cu+ ions at a dose of 1 × 1017 cm-2 and an ion beam current density varying from 2.5 to 10 μA/cm2 are studied.
      
Metal-nanoparticle-containing composite layers were synthesized by implantation of 60 keV Ag+ ions into a soda-lime silicate glass to a dose of 3×1016 ion/cm2 at an ion beam current density of 3 μA/cm2 and a substrate temperature of 35°C.
      
Sapphire-based composite layers implanted with 40-keV Cu+ ions to a total dose of 1.0×1017 cm-2 at an ion beam current density varied from 2.5 to 10 μA/cm2 were studied using Rutherford backscattering and optical reflectance methods.
      
更多          


The carbon and oxygen on the Mo (110) surface has been investigated by means of LEED and AES. We found that, after argonion bombardment of Mo (110) surface containing carbon and oxygen with the beam energy 1 keV and beam current 6 μA, the Auger, peak shapes and carbon intensities changed. Depth-profile technique showed that carbon was diffused from the bulk. Heating sample to temperature above 700 ℃ or 750℃, two types of LEED patterns of Mo(110) c(4×4)-C, (?) -C were observed respectively.

使用LEED和AES研究了钼(110)表面上的碳和氧,用能最为1千电子伏束流为6微安的氩离子轰击含碳和氧的钼(110)表面,发现碳的峰形和强度发生了变化,深度剖面分析指出,碳层是来源于体内,加热样品到700℃和750℃以上分别观察到碳的c(4×4)-碳和-碳两种有序结构.

Carbon and oxygen on the Mo(l00) and Mo(l1l) surfaces can not be removed by bombarding the sample with argon ions at the ambient temperature. While carbon and oxygen can be reduced by bombarding the sample using nitrogen ions with primary energy of 1 keV and beam current of 6 μA for 10-15 min. This may be due to the adsorption of nitrogen reached saturation. After heating sample to 400-600? carbon and oxygen disappeared; at 600-650℃, Auger peak of nitrogen dropped suddenly and then decreased gradually with increasing...

Carbon and oxygen on the Mo(l00) and Mo(l1l) surfaces can not be removed by bombarding the sample with argon ions at the ambient temperature. While carbon and oxygen can be reduced by bombarding the sample using nitrogen ions with primary energy of 1 keV and beam current of 6 μA for 10-15 min. This may be due to the adsorption of nitrogen reached saturation. After heating sample to 400-600? carbon and oxygen disappeared; at 600-650℃, Auger peak of nitrogen dropped suddenly and then decreased gradually with increasing temperature, carbon segregated simultaneously on the surface. Complete desorption of nitrogen took place at 730℃ and 775℃, A p(2×2)-C and a c(6×2)-C LEED patterns were observed respectively.

用一定能量的氩离子束轰击含碳、氧的钼(100)和(111)表面,不能除去表面上的碳。而用能量为1千电子伏,束流为6微安的氮离子轰击10—15分钟,氮在表面的吸附达到饱和值。加热到400—600℃之间碳、氧从表面上基本消失,600—650℃之间吸附在表面上的氮大量脱附,即氮峰陡降到较低值,碳又偏析到表面上。加热到730℃和775℃氮从表面消失,分别得到碳在钼(100)表面上的p(2×2)和c(6×2)结构。 而若将大量脱附氮的钼(111)表面,冷却到室温,氧又偏析到表面上。重新加热到650℃以上碳先从表面消失,得到氮、氧共存的表面。直至加热到800℃氮、氧才从表面消失,得到清洁表面钼(111)的低能衍射图。冷却到室温以后,氧重新偏析到表面上。用一定能量的氩离子束轰击这个含氧的表面,碳、氮重新出现在表面上。加热到700℃从表面消失,760℃氮从表面消失,得到碳在钼(111)表面上的p(6×6)结构。

Under low dose temperature, voids formed by W-implanted H13 steel have been observed. Causes of voids formed are discussed. The hardness of H13 steel increases and wear resistance becomes bad.

在剂量为1×10~(17)cm~(-2)和温度为310℃下,观察到强束流脉冲钨离子注入H13钢所形成的空洞。探讨了空洞的形成原因并发现空洞能提高H13钢的硬度而使其磨损性能变差。

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关束流的内容
在知识搜索中查有关束流的内容
在数字搜索中查有关束流的内容
在概念知识元中查有关束流的内容
在学术趋势中查有关束流的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社