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束流
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  “束流”译为未确定词的双语例句
    Investigation on the Structure and Photoluminescence Properties of Nd Ion Implanted Silicon Film with Low Flux
    低束流Nd~(3+)注入硅基薄膜结构及光致发光的研究
短句来源
    Even at alow dose (5×10~(16) cm~(-2)), there was Er segregation in Er- implanted Si with strong flux (>10 μA·cm~(-2)).
    当束流密度过大(>10μA·cm~(-2)),即使小注量注入时,也将有一定量的Er析出。
短句来源
    The optimal deposition parameters were found to be: substrate temperature 750℃and flux 40mA.
    优化的工艺条件为:沉积温度750℃,蒸发束流40mA。
短句来源
    Svensson and Andersson had approximately calculated the oblique flux on the base of R & H model.
    Svensson和Andersson用R&H模型计算了斜入射下的分布,因用的是近似方法,只能计算衬底表面中心线上的束流值,且不能满意解释实验结果。
短句来源
    Ion acceleration voltage was 48kV. Implant doses were 2×1017cm-2and the flux was from 25 to 48 uA.
    加速电压是48kV,剂量为2×10~(17)cm~(-2),束流密度在25至68μA.
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  ion beam current
The source ensures an argon ion beam current of up to 80 mA at a discharge current and voltage of 1 A and 115 V, respectively, and a pressure of 1.5 × 10-2 Pa in the chamber.
      
Depending on the geometric parameter la (the anode length to diameter ratio) and pressure, maxima are observed in the discharge current and in the ion beam current extracted from an aperture at the center of the cathode.
      
Composite layers made in sapphire by implantation of 40-keV Cu+ ions at a dose of 1 × 1017 cm-2 and an ion beam current density varying from 2.5 to 10 μA/cm2 are studied.
      
Metal-nanoparticle-containing composite layers were synthesized by implantation of 60 keV Ag+ ions into a soda-lime silicate glass to a dose of 3×1016 ion/cm2 at an ion beam current density of 3 μA/cm2 and a substrate temperature of 35°C.
      
Sapphire-based composite layers implanted with 40-keV Cu+ ions to a total dose of 1.0×1017 cm-2 at an ion beam current density varied from 2.5 to 10 μA/cm2 were studied using Rutherford backscattering and optical reflectance methods.
      
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The surface of the dispenser cathode during the heating, activating and ageing has been in situ investigated, using a glass AES apparatus with the small primary beam density. A significant decrease in the coverage of barium on the cathode surface occurs when tits temperature is higher than 1100℃, After long ageing, an average coverage of near monolayer Ba was observed, It was found that the main elements on a well-activated cathode surface are Ba, O, W at operating temperature and that the Ba existed in both...

The surface of the dispenser cathode during the heating, activating and ageing has been in situ investigated, using a glass AES apparatus with the small primary beam density. A significant decrease in the coverage of barium on the cathode surface occurs when tits temperature is higher than 1100℃, After long ageing, an average coverage of near monolayer Ba was observed, It was found that the main elements on a well-activated cathode surface are Ba, O, W at operating temperature and that the Ba existed in both metal and oxide forms. The appearance of impurity C on the cathode surface depends on cathode composition, procedures of treatment and store condition. The relation between cathode emission and the concentration of C was researched, The impurity S was also seen, It might come from the porous tungsten matrix, and could be removed by raising cathode temperature.

在实验室条件下,AES研究阴极表面,应用小束流以减少表面损伤。利用自制AES系统地分析了钡钨阴极在分解、激活、老炼过程中表面组分和状态的变化。对于铝酸钡钙扩散型阴极表面,当温度高于1100℃时,钡的覆盖度明显下降。经较长时间老炼后钡在钨上平均只有不到一个单原子层的覆盖量。激活良好的处于正常工作状态时,阴极表面上主要是钨、氧、钡,而且钡可能以金属钡和氧化钡共存。阴极中的主要杂质碳和阴极材料、处理工艺、贮放条件和历史以及工作条件有密切关系。激活后的阴极表面含碳量和发射性能有一定的关系。较大量的硫可能来自组成多孔钨体的钨粒内部,高温时有可能消除掉。

Ruth and Hirth had calculated flux distributions using their model, but the distributions were only valid for fluxes perpendicular to the substrates. Svensson and Andersson had approximately calculated the oblique flux on the base of R & H model. However, only the flux distribution on central line could be found and S & A method was not satisfied to explain the experimental data: In this paper, oblique fluxes over whole surface of the substrate have been deriveted from R & H model without assumptions of approximation...

Ruth and Hirth had calculated flux distributions using their model, but the distributions were only valid for fluxes perpendicular to the substrates. Svensson and Andersson had approximately calculated the oblique flux on the base of R & H model. However, only the flux distribution on central line could be found and S & A method was not satisfied to explain the experimental data: In this paper, oblique fluxes over whole surface of the substrate have been deriveted from R & H model without assumptions of approximation added. Better results have been obtained.

Ruth和Hirth用自己的模型计算了束流分布,但该分布只限于在正入射条件下使用。Svensson和Andersson用R&H模型计算了斜入射下的分布,因用的是近似方法,只能计算衬底表面中心线上的束流值,且不能满意解释实验结果。本文也采用R&H模型,但不附加近似假定,直接计算斜入射下整个衬底而上的束流分布,获得较满意的结果。

A focused heavy ion beam sputtering apparatus and typical sputtering conditions and characteristics of the apparatus are described. The argon ion beam can be accelerated to maxium energy of 10kev and focused to a minimum diameter of 1.5mm. Beam intensity cau be adjusted continuosly up to 2mA. Foils on substrates, self-supporting foils and rare earth oxide foils were deposited in the apparatus. The deposition rate per unit area is pre sented The puttering conditions of some sublimation material are given.

本文介绍了聚焦重离子束溅射装置的结构和运行参数。该装置的最高加速电压为10kV,最大离子束流为2mA,蕞小离子束斑为φ1.5mm。利用这台装置,沉积了二十六种金属材料的有衬底薄膜、五种元素的无衬底薄膜和一些稀土氧化物薄膜。研究了单位面积沉积率与靶材质量数的关系。给出了一些升华材料的溅射沉积参数。

 
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