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沉积在
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  deposited on a
    CdS nanocrystals capped with bis(2 ethylhexyl) sulfosuccinate disodium(AOT) molecular and Au nanocrystals were co deposited on a n type silicon wafer to study the different polarizabilities induced by a conductive tip.
    将AOT(bis( 2 ethylhexyl)sulfosuccinatedisodium)分子包覆的CdS纳米晶和Au纳米晶共同沉积在n型硅片表面 ,以分析导电探针对其诱导极化。
短句来源
    Ac characteristics of a thin Ag film percolation system deposited on a broken surface of a-Al2O3 ceramics are measured. We prove that the ac conductivity and ac dielectric constant obey the power law and the general scaling relation near the percolation threshold.
    通过对沉积在具有无规自相似结构的α-Al_2O_3断裂面上的银薄膜逾渗系统交流特性的测量,证明了在逾渗阈值Po附近这一系统的交流电导率和介电常数满足指数临界规律和普适标度关系。
短句来源
    The Au atoms,deposited on a melting glass surface with randomly distributed impurities,form a web shaped film first,and then ramified Au aggregates appears gradually.
    沉积在无规杂质区域的熔融玻璃表面的金原子先形成网状结构的薄膜 ,然后逐渐演变成分枝状凝聚体。
短句来源
    F-passivated ZnO nanocrystalline films were prepared from thermal oxidation of ZnF_2 films. The ZnF_2 films were deposited on a Si wafer by electron beam evaporation technique.
    通过热氧化氟化锌(ZnF2)薄膜的方法制备出氟掺杂的多晶ZnO薄膜,ZnF2薄膜是利用电子束蒸发方法沉积在Si(100)衬底得到的。
短句来源
    The crystal structure of AlN film deposited on a (100) surface of a sapphire by a DC reactive magnetron sputtering is studied by a X-ray diffraction, the diagram of the X-xay diffraction shows that the film made by this way is a single crystal film;
    利用X射线衍射技术对用直流反应磁控溅射技术沉积在蓝宝石基底 (10 0 )晶面上的氮化铝 (AlN)薄膜进行了晶体结构分析 ,对X射线衍射图样的分析结果表明 :用该法沉积在蓝宝石基底 (10 0 )晶面上的AlN薄膜为单晶膜 ;
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    CHARACTERISTICS OF Ag THIN FILMS DEPOSITED ON THE FRACTAL SUBSTRATES OF α-Al_2O_3 CERAMICS
    沉积在α-Al_2O_3分形基底上Ag薄膜的特性
短句来源
    TEM ANALYSIS OF NATURAL EVOLUTION OF Ag ULTRAFINE PARTICLES DEPOSITED ON AMORPHOUS CARBON FILM BY SPUTTERING(Ⅰ)─REDUCTION AND COALESCENE OF Ag/Ag_2O ULTRAFINE PARTICLES
    溅射沉积在非晶碳膜基底上的银超微粒其自然演化的TEM分析(Ⅰ)─Ag/Ag_2O超微粒的还原富集
短句来源
    TEM ANALYSIS OF NATURAL EVOLUTION OF Ag ULTRAFINE PARTICLES DEPOSIED ON AMORPHOUS CARBON FILM BY SPUTTERING(Ⅱ)───SULPHURIZATION OF Ag AND Ag/Ag_2O ULTRAFINE PARTICLES
    溅射沉积在非晶碳膜基底上的银超微粒其自然演化的TEM分析(Ⅱ)──Ag、Ag/Ag_2O超微粒的硫化
短句来源
    Influence of impurities on the structure of ramified aggregates on colloidal substrate surfaces
    无序杂质区域对沉积在胶体基底表面的金原子凝聚体分形结构的影响
短句来源
    Growth mechanism and electrical properties of Au films deposited on silicone oil surfaces
    沉积在硅油表面上Au薄膜的电学性能及成膜机理
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  deposited on a
Here we reported a type of nitrilotriacetic acid chip (NTA-chip) prepared by transferring NTA-DOGS containing a lipid monolayer to a 50 nm thick gold layer deposited on a glass slide.
      
The results of the investigation of the acoustic reflectance function for titanium nitride films deposited on a steel surface are presented as an example.
      
An ammonia waveguide sensor based on a Ta2O5 film deposited on a glass substrate is considered.
      
The catalysts differ in preparation conditions and the composition of the active component film deposited on a nonporous support.
      
Lead adatoms on submonolayers of selenium and tellurium deposited on a gold electrode
      
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The saturation phenomenon of the tungsten deposition rate depending on light intensity is observed under high light intensity by the photolysis of vapor W(CO)6 The saturation deposition rate is measured with the saturation method by giving the values of 1.2×102 A/s,1.7×102 A/s and 2.7×102 A/s at 3℃,5℃ and 8℃ respectively.These results are compared with that measured by the absorption method and the approximate results are in the same order of magnitude by a factor less than 3.

观察到羰基钨W(CO)_6光分解沉积在光强较强时出现饱和现象。用饱和法测定了饱和沉积速率,并与用吸收法测得的结果进行了比较,二者之间相差小于三倍。

We describe two methods of composition determination of superconducting thin films: (1) the multiple-standards method,in which a set of filter disks are used,and (2) the fundamental parameters method,in which only one standard is used.The two methods are convenient and easy to apply.These disk standards can be prepared readily.The samples remain nondestructive when examined.These methods can be applied to superconducting thin films of yttrium series,and the principle of these methods can also be applied to the...

We describe two methods of composition determination of superconducting thin films: (1) the multiple-standards method,in which a set of filter disks are used,and (2) the fundamental parameters method,in which only one standard is used.The two methods are convenient and easy to apply.These disk standards can be prepared readily.The samples remain nondestructive when examined.These methods can be applied to superconducting thin films of yttrium series,and the principle of these methods can also be applied to the films of other series as well.

本文叙述二种用于测定沉积在钛酸锶基片上的超导薄膜组份的方法:(1)多标法,用一组纸片标准样品,解一组方程,(2)基本参数法,只需一个纸片标样.二法均简便易行,标准试样容易制作.测定时不必破坏试样.此法不但适用于钇系超导薄膜组份的测定,本法原理亦适用于铋系,铊系等其他体系的超导薄膜组份测定,并能快速地配合科研与生产.

Titanium films are deposited on Si wafers by electron-beam evaporation in vacuum, the base pressure of the system is 10-7 Torr. Solid phase reaction results through rapid thermal annealing. After annealed at 540-600℃, two metastable phase diffraction peaks of Ti5Si4 are observed in X-ray diffraction (XRD) pattern. Prolonging the annealing time, the first nucleated phase Ti5Si4 remains unchanged until titanium is completely consumed, then it transforms into a stable phase TiSi2. When the annealing tcmpeiature...

Titanium films are deposited on Si wafers by electron-beam evaporation in vacuum, the base pressure of the system is 10-7 Torr. Solid phase reaction results through rapid thermal annealing. After annealed at 540-600℃, two metastable phase diffraction peaks of Ti5Si4 are observed in X-ray diffraction (XRD) pattern. Prolonging the annealing time, the first nucleated phase Ti5Si4 remains unchanged until titanium is completely consumed, then it transforms into a stable phase TiSi2. When the annealing tcmpeiature is above 640℃, a stable phase TiSi2 is formed. The researches of sheel resistance and Raman scattering give the results which are in good agreement with XRD. The two Raman pea' s at 207 and 244 cm-1 are characteristic Raman peaks of TiSi2, but the other three Raman peaks at 270, 297 and 341 cm-1 are likely attributed

钛膜在10~(-7)Torr真空中用电子束蒸发沉积在硅单晶片上,以快速热退火方式进行团相反应。转靶X射线衍射分析发现,540—600℃退火后,有两个亚稳相Ti_5Si_4的衍射峰。延长退火时间,第一成核相Ti_5Si_4可持续存在到钛被消耗完,随即转变成稳定相TiSi_2。退火温度高于640℃,形成稳定相TiSi_2。薄层电阻和喇曼散射的测量研究结果表明,与X射线衍射有很好的对应。207和244cm~(-1)波数处的两个喇曼峰为TiSi_2的特征喇曼峰,而270,297和341cm~(1)的三个喇曼峰似乎是由Ti_5Si_4引起。

 
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