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沉积在
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  deposited on a
    Ac characteristics of a thin Ag film percolation system deposited on a broken surface of a-Al2O3 ceramics are measured. We prove that the ac conductivity and ac dielectric constant obey the power law and the general scaling relation near the percolation threshold.
    通过对沉积在具有无规自相似结构的α-Al_2O_3断裂面上的银薄膜逾渗系统交流特性的测量,证明了在逾渗阈值Po附近这一系统的交流电导率和介电常数满足指数临界规律和普适标度关系。
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    The Au atoms,deposited on a melting glass surface with randomly distributed impurities,form a web shaped film first,and then ramified Au aggregates appears gradually.
    沉积在无规杂质区域的熔融玻璃表面的金原子先形成网状结构的薄膜 ,然后逐渐演变成分枝状凝聚体。
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    Two methods for studying the physical properties of thin films on a metallic substrate are briefly presented. The first method makes possible measurements of the shear modulus and internal friction of a TiN/Ti(C, N) multi-layer film deposited on a Mo wire.
    主要介绍了研究金属衬底上薄膜的物理性质的两种方 法:第一种方法,用于测量沉积在钼丝上的TiN/Ti(C,N)多层膜的切变模量和内耗;
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    F-passivated ZnO nanocrystalline films were prepared from thermal oxidation of ZnF_2 films. The ZnF_2 films were deposited on a Si wafer by electron beam evaporation technique.
    通过热氧化氟化锌(ZnF2)薄膜的方法制备出氟掺杂的多晶ZnO薄膜,ZnF2薄膜是利用电子束蒸发方法沉积在Si(100)衬底得到的。
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    The crystal structure of AlN film deposited on a (100) surface of a sapphire by a DC reactive magnetron sputtering is studied by a X-ray diffraction, the diagram of the X-xay diffraction shows that the film made by this way is a single crystal film;
    利用X射线衍射技术对用直流反应磁控溅射技术沉积在蓝宝石基底 (10 0 )晶面上的氮化铝 (AlN)薄膜进行了晶体结构分析 ,对X射线衍射图样的分析结果表明 :用该法沉积在蓝宝石基底 (10 0 )晶面上的AlN薄膜为单晶膜 ;
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  “沉积在”译为未确定词的双语例句
    CHARACTERISTICS OF Ag THIN FILMS DEPOSITED ON THE FRACTAL SUBSTRATES OF α-Al_2O_3 CERAMICS
    沉积在α-Al_2O_3分形基底上Ag薄膜的特性
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    n-BN/p-Si film heterojunctions was fabricated with boron nitride films grown by magnetron sputtering and S ion implantation, and annealed at 600 ℃,on p-type Si( 100)substrate.
    用射频溅射系统制备了BN薄膜,并且用离子注入的方法在BN薄膜中注入S,从而成功制备了n-BN/p-Si薄膜异质结,并研究了异质结的电学性质。 注入S的BN薄膜是用13.56 MHz射频溅射系统沉积在p型Si(100)(5-6 Ω·cm)衬底上, 靶材为h-BN靶(纯度为99.99%)。
    Growth mechanism and electrical properties of Au films deposited on silicone oil surfaces
    沉积在硅油表面上Au薄膜的电学性能及成膜机理
短句来源
    Iron films deposited on silicone oil surfaces
    沉积在硅油表面的铁薄膜
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    The results of serial experiments indicate that it is good for film growth in such conditions: bias voltage set at -50V, deposition power at 150W, deposition time lasted 120min, total pressure is 4Pa, Na percentage is 50%, substrate temperature set at 500 C.
    系统的实验结果表明,沉积氮化硼薄膜较好的条件为:衬底偏压,50V,溅射功率150W,沉积时间1加min,沉积气压4Pa,氮气含量50%,衬底温度500℃。 从射频磁控溅射实验的结果来看,沉积在钥衬底上的氮化硼薄膜质量稍好于沉积在镍锰钻合金衬底上的氮化硼薄膜。
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  deposited on a
Here we reported a type of nitrilotriacetic acid chip (NTA-chip) prepared by transferring NTA-DOGS containing a lipid monolayer to a 50 nm thick gold layer deposited on a glass slide.
      
The results of the investigation of the acoustic reflectance function for titanium nitride films deposited on a steel surface are presented as an example.
      
An ammonia waveguide sensor based on a Ta2O5 film deposited on a glass substrate is considered.
      
The catalysts differ in preparation conditions and the composition of the active component film deposited on a nonporous support.
      
Lead adatoms on submonolayers of selenium and tellurium deposited on a gold electrode
      
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Three CrO1-CrO3 have been obtained using DC magnetron reactive sputtering techniques, andE-CrO1 and E-CrO2 have also been prepared by reactive evaporation. Within the wavelengthrange of 0.4-2.5um, the optical constants n,k(where the complex refractive index n-ik) ofreactively sputtered and evaporated Chromium-Oxygen thin films have been determined byUV-VIS-NIR spectrophtometer. The energy band gaps of sputtered Cr03 are approximately 1. leV(AD) and 1. 4eV (HT). Designs and calculations of solar absorbing selective...

Three CrO1-CrO3 have been obtained using DC magnetron reactive sputtering techniques, andE-CrO1 and E-CrO2 have also been prepared by reactive evaporation. Within the wavelengthrange of 0.4-2.5um, the optical constants n,k(where the complex refractive index n-ik) ofreactively sputtered and evaporated Chromium-Oxygen thin films have been determined byUV-VIS-NIR spectrophtometer. The energy band gaps of sputtered Cr03 are approximately 1. leV(AD) and 1. 4eV (HT). Designs and calculations of solar absorbing selective surface have been carried out fromobtained optical constants of sputtered and evaporated Chromium-Oxygen thin films. Experimentally measured reflectances and obsorptances for Chromium-Oxygen thin films on aluminium base layer is quite consistent with that of the computed. The SiO_x thin film prepared by DC magnetron reactive sputtering technique has a composition like SiO_2. For this SiO_2 thin film, n≈1.5, k<0. 01. have been determined. SiO_2 is anantireflection layer, deposited on the basic selective surface CrO_x/Cr+CrO_x/Al, has an absorptance up to a(AM2) ≈0.94, and an emittance ε(at room temperature)of about 0.04. Thus a/εapproximately reaches 23.5.

采用直流磁控反应溅射技术,获得了三种铬-氧薄膜复合材料。反应蒸发得到了两种铬-氧薄膜复合材料。用测厚仪与分光光度计法确定了波长在0.4-2.5微米范围内这些薄膜材料的光学常数n、k(复折射率n-ik)。其中第三种溅射铬-氧薄膜(C_rO3)的能带间隙约1.leV (A-D)和1.4eV(H-T)。从这些铬-氧薄膜材料的n、k数据,计算与设计了太阳选择性吸收涂层。得到以铝为底层的铬-氧选择性吸收涂层的最佳太阳光吸收率a≈0.91(AM2),这与实际制备的铬-氧选择性涂层的吸收率是一致的。直流磁控反应溅射制备的SiO_X薄膜,其成分接近SiO_2。经确定SiO_2薄膜的n≈1.5,k<0.01。SiO_2作为减反射膜沉积在上述的铬-氧选择性涂层上,其太阳吸收率a(AM2)≈0.94,室温发射率ε=0.04,故a/ε达23.5。

α-C:H(Butane), Al-O. Si-O and Al-C-F films as antireflection layers of selective absorbing surfaces have been developed using the d. c. reactively cylindrical magnetron sputtering techniques. The refractive indices n of A1Ox, SiOx and Al-C-F films are approximately 1.85, 1.70.1.50 and 1.40 at wavelength 0.5μm respectively, and the extinction coefficient k for each above film is quite low.The dielectric material based on Aluminium-Carbon-Fluorine (Al-C-F) has low n and k, and relatively high deposition rate,...

α-C:H(Butane), Al-O. Si-O and Al-C-F films as antireflection layers of selective absorbing surfaces have been developed using the d. c. reactively cylindrical magnetron sputtering techniques. The refractive indices n of A1Ox, SiOx and Al-C-F films are approximately 1.85, 1.70.1.50 and 1.40 at wavelength 0.5μm respectively, and the extinction coefficient k for each above film is quite low.The dielectric material based on Aluminium-Carbon-Fluorine (Al-C-F) has low n and k, and relatively high deposition rate, about four times larger than SiOx and fifteen times larger than A1OX, and may be suitable for antireflection coatings,or the low refractive index component in multilayer stacks.AlOx(50nm), SiOx(70nm) or Al-C-F(70nm)as uppermost layer sputtered onto the G-C:H/SS-C/Cu selective surface have been fabricated,and all of them associated solar absor-btance α s(AM2)(heat treatment at 500℃ for one hour)about 0.96, and thermal emittances of these selective absorbing surfaces (room temperature) about 0.04, 0.04 and 0.05 respectively, αs/ε of them around 19-24.The evacuated collector tubes with Al-C-F/α-C:H/SS-C/Cu selective surface are produced. The emittance of the selective surface vs temperature is measured from 100-300℃3, about 0.055 at 100℃.

采用直流圆柱形磁控反应溅射研制了α-C:H(丁烷),Al-O、Si-O与Al-C-F等薄膜。在波长为0.5微米时,这些薄膜的折射率n分别为1.85、1.70、1.50与1.40,消光系数k都很低。Al-C-F薄膜是比较理想的减反射膜,不仅折射率低,而且沉积速率高,约为SiO_x的四倍,AlO_x的十五倍。 Al-O膜(60nm)、Si-O膜(70nm)或Al-C-F膜(70nm)溅射沉积在以铜为基底的渐变不锈钢-碳涂层上,构成新的选择性吸收涂层,其太阳吸收率α_s(AM2)均达0.96(真空500℃烘烤1小时),室温发射率ε分别约为0.04、0.04与0.05,α_s/ε约19—24。 研制了具有Al-C-F/α-C:H/SS-C/Cu吸收涂层的全玻璃真空集热管。在100℃时这种吸收涂层的发射率约为0.055。

The surface metallurgy technique which, by bombarding aluminium thin film deposited on the surface of high-speed steel (W18Cr4V) with nitrogen ion beamy transformed the alloy compositions of the surface of high-speed steel has been described here. The hardness and wear-resistance have improved greatly after being treated with this technique. Finally, the basic factors which caused the transformation of mechanics properties of high-speed steel surface, due to nitrogen and aluminium mingling in the surface of...

The surface metallurgy technique which, by bombarding aluminium thin film deposited on the surface of high-speed steel (W18Cr4V) with nitrogen ion beamy transformed the alloy compositions of the surface of high-speed steel has been described here. The hardness and wear-resistance have improved greatly after being treated with this technique. Finally, the basic factors which caused the transformation of mechanics properties of high-speed steel surface, due to nitrogen and aluminium mingling in the surface of high-speed steel, have been discussed.

本文介绍了用氮离子束轰击沉积在高速钢(W18Cr4V)表面上的铝膜,以改变高速钢表面合金成分的表面冶金技术;采用该技术处理高速钢后,高速钢表面的显微硬度和耐磨性得到较大提高。最后,讨论了由于氮和铝进入后引起高速钢表面机械性能变化的几个主要因素。

 
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