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观察形貌
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  observation of the microstructure
    Electron microscopic observation of the microstructure has been made by TEM in stainless steel shape memory alloys consist of different component after different treatment. The mi-crostmcture in hot rolling alloy is made of stacking faults and lump precipitate in the grain boundaiy. The precipitate is defined as carbide of Cr7C3 by the analysis of X - ray diffraction peak and TEM diffraction pattern.
    本文通过对不锈钢型形状记忆合金两种不同成份经过不同处理后的试样在透射电镜下观察形貌发现,合金热轧态微观组织为层错和晶界块状析出物,经X射线和电镜衍射花样共同确定为Cr_7C_3型碳化物。
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  “观察形貌”译为未确定词的双语例句
    Internal boronization treament of Fe3%Cu97%,Ni5%Cu95%,Fe3%Ni5%Cu92%,Fe1%Ni 5%Cu94%is performed at different temperatures and in different time of heat preservation.
    将成分分别为Fe3%Cu97%、Ni5%Cu95%、Fe3%Ni5%Cu92%、Fe1%Ni5%Cu94%4种铜合金在不同的温度和保温时间下进行内硼化处理. 然后利用扫描电子显微镜观察形貌;
短句来源
    TEM image showed that nanorods form after the modification, which were 50~100nm in width and several microns in length.
    使用LB技术对修饰后得到的纳米棒进行了组装,使用原子力显微镜观察形貌,结果表明纳米棒排列混乱无序且有聚集现象;
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    In the compoud material experiment of polymeric aniline /active carbon, different compound methods of traditional chemical oxidation , adsorption gas phase aniline and changing the surface feature of active carbon are compared , analyses the change of functional contain through conductance, yield 's measurement and infrared spectrum.
    在合成聚苯胺/活性炭复合材料实验方式中,采用传统的化学氧化法和吸附气相苯胺法以及活性炭表面改性再聚合方法做比较,通过电导率、产率测定,红外光谱分析,扫面电镜观察形貌,X衍射分析其结晶度变化等测试手段对复合材料做表征。
短句来源
    The morphology was taken by SEM. The results show that the structure of cobalt oxalate would not be changed in process 1,but a transformation of cobalt oxalate from α-type into β-type would occur when adding a small amount of Al in process 2. The particle sizes of Al--doped cobalt oxalate increase with the increase of doping quantities,whereas the outline of cobalt oxalate particles does not change distinctly.
    扫描电镜观察形貌.结果表明,使用工艺1不会改变草酸钴的结构而应用工艺2只需掺入少量铝即可使草酸钴由α-晶型转变为β-晶型.随着草酸钴中铝掺杂量的增加,掺杂草酸钴的粒度增大,而草酸钴的外形轮廓不发生明显改变.
短句来源
    The composition of specimens was analyzed usining XRD, IR, and EDX, the powder morphology was observed by SEM.
    用RigakuD/max-3C型X射线衍射仪(XRD),PE1760-X傅氏红外光谱仪(IR)和X射线散射能谱(EDX)分析粉样和片样的成分,用S-2700扫描电镜(SEM)观察形貌
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  observation of the microstructure
The model is mainly based on the observation of the microstructure of interface between fresh and old (3 months to 60 years) concretes by using scanning electron microscopy.
      
Significant results can be obtained from calorimetric evolution after a series of annealings, even without a direct observation of the microstructure.
      
The TEM observation of the microstructure showed the presence of glassy pockets at the triple grain junctions.
      
Observation of the microstructure was carried out using scanning electron microscopy (SEM) and an analytical electron microscope.
      
An unexpected observation of the microstructure development was the uphill diffusion of tin during the Cu-Sn reactive diffusion.
      
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Single crystals of CoAPO-5 molecular sieve are synthesized by hydrothermal

采用水热法,合成了 CoAPO-5分子筛大晶体,通过 X 射线衍射分析、电子显微镜观察形貌、电子探针、热稳定性、红外光谱、X 射线光电子能谱、~(31)P 固体高分辨魔角旋转核磁共振、晶胞参数测定、表面酸性分析等,对其结构和性能进行了研究。

Crystallization of phosphorous-doped hydrogenated silicon was initiated at asubstrate tem-perature below 90℃ and low RF power.The relationship between microcrystallization andthe deposition condition has been studied in detail.The μc-Si:H material with conductivity of30(Ωcn)~(-1) and conductivity activation energy 2meV was obtained at substrate temperature of150℃.Through the analysis of small angle X-ray diffraction, Raman scattering and SEM,we found the microcrystalline size is small and the morphologies are...

Crystallization of phosphorous-doped hydrogenated silicon was initiated at asubstrate tem-perature below 90℃ and low RF power.The relationship between microcrystallization andthe deposition condition has been studied in detail.The μc-Si:H material with conductivity of30(Ωcn)~(-1) and conductivity activation energy 2meV was obtained at substrate temperature of150℃.Through the analysis of small angle X-ray diffraction, Raman scattering and SEM,we found the microcrystalline size is small and the morphologies are uniform.With the abovefeature, this kind of p-doped μc-Si:H material has great advantage in matching with othertechnology of devices.Finally,the experiment results are discussed.

我们用辉光放电法在较低的衬底温度下(90℃)获得了掺磷微晶化硅(n~+μC-Si).并对微晶化与工艺条件之间的关系进行了详细的研究,在150℃衬底温度,2%掺杂时获得了电导率近30(Qcm)~(-1),电导激活能近似为零的微晶化材料.对微昌化材料的结构进行了小角度X光衍射,拉曼散射谱的分析,并用扫描电镜观察了形貌.这种材料的晶粒较小而且结构均匀.又由于生长温度低,rf功率小,有利于与其它器件工艺匹配.文章对实验结果进行了讨论.

The lattice matched AlGaSb epilayer has been grown on GaSb sub strate by using cvercooling technique at saturation temperature of 550℃.The thick ness of the epilayer was measured using metallograph and the morphology ob served.The lattic parameters and the band gap were measured utilizing X-ray bi morph diffraction and low temperature photoluminescence respectively,so as to de- termine the composition of the epilayer.

在 GaSb 衬底上用过冷却技术在550℃的饱和温度下生长了晶格匹配的AlGaSb 外延层。用金相显微镜测量了外延层的厚度并观察了形貌。用 X 射线双晶衍射和低温光致发光技术分别测量了材料的晶格常数和禁带宽度,并因此确定了外延层的组分。

 
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