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化学比
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  stoichiometric one
     The electron probe analysis data of the crystal LaMgAl_(11)O_(19):Nd~(3+) and its inclusions show that the inclusions are formed by various compo-sitions of main constituents and the crystal composition doesn′t agree withthe stoichiometric one.
     用电子探针分析 LaMgAl_(11)O_(19):Nd~(3+)晶体和夹杂物中的成分,结果表明,夹杂物由主成分不同组成所构成,晶体成分整体偏离化学比
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  “化学比”译为未确定词的双语例句
     Electronic Structure of Substoichiometric with Zr_3N_4 Metal-Vacancies
     金属缺位非化学比材料Zr_3N_4的电子结构
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     Under the irradiation of medium-intense electron beam with energy 100 KeV, α-LiIO3 transforms into γ-LiIO3 at first and then into Li2O and an other new type of Li-O compound which is probably a nonstoichiometric one and re-fered to as X compound.
     α-LiIO_3经100keV能量中等强度的电子束辐照后,最初转变为γ-LiIO_3继而转变为Li_2O和另一种新的、可能是非化学比的Li—O化合物,称之新产物X。
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     Methods Serum levels of CA125,CA72-4 and TSGF in 75 patients with ovary cancer,38 patients with benign ovary tumor and 38 normal controls were measured by elctrochemiluminescence immuno-assay(ECLIA)and chemical colorimetry.
     方法 卵巢癌患者 75例、卵巢良性肿瘤患者 38例及健康妇女 38例的血清样品 ,分别用电化学发光免疫测定法和化学比色定量法测定 CA12 5、CA72 - 4和 TSGF含量。
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     Methods Serum levels of CA125 and TSGF in 223 patients with malignant gynecological tumor, 90 patients with benign gynecological tumors and 98 normal controls were measured by elctrochemiluminescence immuno-assay (ECLIA) and chemical colorimetry .
     方法妇科恶性肿瘤患者223例、妇科良性肿瘤患者90例及正常对照98人的血清样品,分别用电化学发光免疫测定法和化学比色定量法测定CA125和TSGF含量,然后进行分析。
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     Energy dispersive X ray (EDX) analysis showed that N/C ratios of the films can be as high as 1.33.X ray diffraction results showed that the films consisted of β and α C 3N 4.FT IR and Raman spectroscopy supported the existence of C N single bond.
     X-射线能谱(EDX)分析结果表明N/C原子比为1.0~1.4,接近C3N4的化学比; X射线衍射谱说明薄膜主要由β和α-C3N4组成;
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  相似匹配句对
     CHAPTER 5 MARINE SEDIMENTATION Section 5 Sedimentary Chemistry
     沉积物化学
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     Electroless Copper Plating
     化学镀铜
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     V. C higher than families G.
     V.C家系G.
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     Electrochemical treatment effect is preferable to chemical treatment.
     电化学处理化学处理效果更为显著.
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     In this paper,the writer proves the existence theorem of Nash-Mequilibrium points under the weaker conditions than D.
     本文在 D.
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  stoichiometric one
The shape of the reflection spectrum of the buffer layer after annealing corresponds to that of an La0.8Ba0.2MnO3 single crystal, which indicates that the oxygen content is close to the stoichiometric one.
      
For the anion-deficient system the symmetry type of the unit cell is similar to the stoichiometric one.
      
Furthermore, carbon formation was found to be negligible even for H2O/C2H6O molar ratios equal to the stoichiometric one.
      
Moreover, the protein-dye interaction is not a stoichiometric one.
      
This composition, as well as that of the initial pure component in the form of a highly dispersed fraction (~100 ?), differs noticeably from the stoichiometric one.
      
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The electron irradiation effects on the crystal structure of ?-lithium iodate (α-LiIO3) have been observed by TEM. Under the irradiation of medium-intense electron beam with energy 100 KeV, α-LiIO3 transforms into γ-LiIO3 at first and then into Li2O and an other new type of Li-O compound which is probably a nonstoichiometric one and re-fered to as X compound. If the irradiation is carried out with more intense electron beam, α-LiIO3 crystal melts quickly. In that case, either a decrease in intensity of electron...

The electron irradiation effects on the crystal structure of ?-lithium iodate (α-LiIO3) have been observed by TEM. Under the irradiation of medium-intense electron beam with energy 100 KeV, α-LiIO3 transforms into γ-LiIO3 at first and then into Li2O and an other new type of Li-O compound which is probably a nonstoichiometric one and re-fered to as X compound. If the irradiation is carried out with more intense electron beam, α-LiIO3 crystal melts quickly. In that case, either a decrease in intensity of electron beam or a break in irradiation leads to recrystallization of the melted substance in the form of X compound which gradually transforms into Li2O and metal Li under subsequent electron irradiation. The phase tansformation form X compound into Li2O is reversible to certain extent. Besides, it is found that the electron irradiation effects on the structure of α-lithium iodate monocrystal is clearly anisotropic.

用透射电子显微镜观察了电子辐照对α-LiIO_3晶体结构的影响。α-LiIO_3经100keV能量中等强度的电子束辐照后,最初转变为γ-LiIO_3继而转变为Li_2O和另一种新的、可能是非化学比的Li—O化合物,称之新产物X。若用强电子束进行辐照,则α-LiIO_3迅速熔化。此时减弱电子束或停止辐照,均能使熔融物质凝固成上述新产物X,新产物X在电子束辐照下逐渐转变为Li_2O和金属锂。从新产物X转变为Li_2O的相变有一定程度的可逆性。此外发现,在电子束辐照下,α-LiIO_3单晶的结构变化有明显的各向异性。

The study of the transition region at the interface of Si-SiO2 by changing the angle of emission in XPS is reported in this paper. The sample are ultra-thin oxide film on the silicon(111) surface formed at low temperature (700 ℃), the thickness of which was less than 50 A. The variation of the chemical displacement (6) and the intensity ratio (Iox/I81) of the silicon 2p photoelectron peaks come from the oxide film and the single-crystal substrate with the angle of emission is contradictory with the prediction...

The study of the transition region at the interface of Si-SiO2 by changing the angle of emission in XPS is reported in this paper. The sample are ultra-thin oxide film on the silicon(111) surface formed at low temperature (700 ℃), the thickness of which was less than 50 A. The variation of the chemical displacement (6) and the intensity ratio (Iox/I81) of the silicon 2p photoelectron peaks come from the oxide film and the single-crystal substrate with the angle of emission is contradictory with the prediction for an ideal interface model. The comparison of the experiment results with the prediction of the random-bonding model shows that there exists a transition region at the interface of Si-SiO2 and the width of which is about 20 A, less than the mean escape length of the Si2p photoelectron in SiO2. The same results are given by the experiment of Ar+ ion sputtering profiles.

本文报道了用X射线光电子能谱的角度效应研究硅-二氧化硅界面过渡区的结果。样品为(111)取向的硅单晶片上低温(700℃)氧化生成的超薄氧化膜,膜的厚度不大于50。氧化膜与单晶衬底中Si_(2p)光电子谱峰之间的化学位移(δ)和强度比(I_(0x)/I_(si))随光电子发射角(θ)的变化明显地偏离理想界面所预期的结果,表明在硅-二氧化硅的界面处存在化学比为SiO_x(0

This paper discusses the problem associated with the formation mechanism of p-n junction and properties thin-film Cu2S/CdS solar cell. Calculations were made of the doped concentration "C0", of the thickness of Cu-film about Cu-treatment and of the junction areas increased by pre-etching. The authors believed that as the thickness of the Cu2S layer increase, the open-circuit voltage will not decrease.

本文讨论了硫化镉太阳电池p-n结的形成机理。根据所提出的模型及假设,计算了铜—硫化学比的失配量与掺杂浓度的关系和铜处理工艺中蒸铜层的厚度,采用误差补函数扩散模型计算了结深的增长速率。根据予腐蚀电镜照片的形貌,分析计算了结表面的增加量,认为结面积的增加不会使电池的开路电压下降。最后,把计算结果与有关文献及实验数据作了比较。

 
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