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偏压作用下
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  “偏压作用下”译为未确定词的双语例句
     Based on organic semiconductor material and the inorganic semiconductor p \|type Si has been able to forming the homotype heterojunctcon PTCDA/ p \|Si,has been a analyses and discussion on the structure of energy band and the characteristic current~voltage by the action of the forward and inverse voltage.
     根据有机半导体材料 PTCDA与无机半导体 p型 Si能够形成同型异质结PTCDA/p- Si,分析讨论了它在正、反向偏压作用下的能带结构及其电流~电压特性。
短句来源
     As the substrate is made of steel and is supplied a proper negative bias, under the function of bias the metal ions bombarded and heated the substrate upto 900℃ and 1100℃ .
     基板由钢材制 成,施加适当的负偏压.在基板负偏压作用下,金属离子轰击并加热基板至 900℃或 1100℃。
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     In this paper, the following work has been done:1 The load-bearing capacity of L, T and +-shaped columns under axial compression and biaxial bending is calculated by a numerical integral program.
     1 对L、T、十形柱双偏压作用下正截面承载力进行计算,编制了数值积分程序,并对L、T、十形柱偏心矩增大系数进行计算分析。
短句来源
     NONLINEAR ANALYSIS OF REINFORCED CONCRETE MEMBERS WITH IRREGULAR SHAPE SECTIONS SUBJECTED TO BIECCENTRIC COMPRESSION
     在双向偏压作用下钢筋混凝土异形构件的非线性分析
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     The radial electric field of the plasma in the KT-5C tokamak is controlled using electrode biasing. It is found that with positive bias,radial electrical field changes from a low negative well to a modest positive hill,and an enhanced E×B shear layer appears.
     通过电极偏压来控制KT 5C装置边缘区等离子体的径向电场 ,发现在正偏压作用下 ,径向电场剖面由小的负阱状变成明显的山包结构 ,从而形成一个加强的E×B剪切层。
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  相似匹配句对
     Nucleation Behavior of Diamond Films under the Effect of Bias Field
     金刚石膜在偏压电场作用的成核行为
短句来源
     DIELECTRIC PROPERTIES OF THE IONIC CONDUCTOR SINGLE CRYSTALS UNDER THE ACTION OF A DC FIELD
     离子导体在直流偏压作用的介电特性
短句来源
     The Effect of Voltage in Tunneling Effect
     隧道效应中偏压作用
短句来源
     The effect of bias voltage in tunneling phenomena
     偏压在隧道效应中的作用
短句来源
     Self-bias Induced Aligned Growth of Carbon Nanotubes
     自偏压作用纳米碳管的定向生长
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  bias induced
Subjects produced the required movement directions and amplitudes of the star drawing largely successfully, irrespective of the force bias induced by the spring.
      
3 (bisection of an unfilled space) and 4 (bisection of flanked lines/unfilled spaces) aimed at disclosing perceptual, attentional, and numerical constraints on the bias induced by the position of the larger digit.
      
Some empirical investigations about the bias induced when ignoring misclassification are reported, extending the model to include the possibility that the rate of misclassification can vary across units according to the value of some covariates.
      
Spontaneous current and DC bias induced current in nickel-metal hydride secondary battery
      
Besides a possible bias induced by experimental design, some difficulties inherent in stereological analysis appear during thyroid morphometric investigations.
      
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In our previous works, it had been found the apparent dielectric constant ∈c' of α-LiIO3 single crystal increases as a bias DC field is applied in the c direction. And it had been attributed to result of ionic conduction. In this paper, the dielectric properties of KLiS04 and NaCl single crystals under the action of a DC field have been investigated. Similar to the situation of α-LiIO3 single crystal, the phenomenon of change of the apparent dielectric constant was observed in these crystals. It verified the...

In our previous works, it had been found the apparent dielectric constant ∈c' of α-LiIO3 single crystal increases as a bias DC field is applied in the c direction. And it had been attributed to result of ionic conduction. In this paper, the dielectric properties of KLiS04 and NaCl single crystals under the action of a DC field have been investigated. Similar to the situation of α-LiIO3 single crystal, the phenomenon of change of the apparent dielectric constant was observed in these crystals. It verified the conclusion mentioned above. We also studied the dependences of this property of ionic conductors on temperatures, frequencies and ambient atmosphere. The condition under which this phenomenon appeares was discussed.

在我们以前的工作中,发现α-LilO_3在c向直流偏压作用下表观介电常数增加。并把这一现象归结为由离子导电所产生。本文进一步研究了离子导体KLiSO_4和NaCl单晶在直流偏压下的介电特性,也观察到了表观介电常数改变的现象,证实了上述结论的正确性。我们也研究了离子导体的这一特性与温度、频率和样品四周气氛的关系,讨论了它发生的条件。

The cathode electric arc source is used as the source of ion infiltrating metals. The target of source is made of Ti, Al. stainless steel. The arc source produces the arc discharging of cold cathode so that metal plasma is formed and it supplies the high density of metal ion current. As the substrate is made of steel and is supplied a proper negative bias, under the function of bias the metal ions bombarded and heated the substrate upto 900℃ and 1100℃ . The metal atoms infiltrate into the substrate and form...

The cathode electric arc source is used as the source of ion infiltrating metals. The target of source is made of Ti, Al. stainless steel. The arc source produces the arc discharging of cold cathode so that metal plasma is formed and it supplies the high density of metal ion current. As the substrate is made of steel and is supplied a proper negative bias, under the function of bias the metal ions bombarded and heated the substrate upto 900℃ and 1100℃ . The metal atoms infiltrate into the substrate and form an infiltrated metals layer with high speed. The morphologies of fracture of the infiltrated metals layer and the concentration distribution of Ti. Al. Cr. Ni in the layer have been investigated in the paper. The results also show that the technigue of the ion infiltrated metals with cathode electric arc is a new technique of metal plasma surface metallurgy and a development for multi-arc ion plating.

本文用阴极电弧源做离子渗金属源。源极的靶材用Ti、Al、不锈钢制做。弧源因 产生冷阴极弧光放电而产生金属等离子体,形成高密度的金属离子流。基板由钢材制 成,施加适当的负偏压.在基板负偏压作用下,金属离子轰击并加热基板至 900℃或 1100℃。金属原子渗入钢中形成高渗速渗金属层.文中测试了渗金属层的组织形貌和 Ti、 Al、 Cr、 Ni在渗层中的分布。结果表明阴极电弧源离子渗金属技术是新的金属等离子 体表面合金化技术,是对多弧离子镀的发展。

The factors determining quantum efficiency of field-assisted InP/InGaAsP semiconductor photocathodes have been analysed in detail in the paper. The transmission process of electrons in the absorption layer and transferred-electron process in the emission layer as well as the escape probability of electrons in the surface of emission layer have been calculated quantitatively on the basis of continuity equations and tunnelling effect of quantum mechanics. The curves of quantum efficiency versus wavelength for...

The factors determining quantum efficiency of field-assisted InP/InGaAsP semiconductor photocathodes have been analysed in detail in the paper. The transmission process of electrons in the absorption layer and transferred-electron process in the emission layer as well as the escape probability of electrons in the surface of emission layer have been calculated quantitatively on the basis of continuity equations and tunnelling effect of quantum mechanics. The curves of quantum efficiency versus wavelength for various biases have been obtained. The results show that the quantum efficiency of semiconductor photocathode in the range 0.9-1.25μm can be risen two orders of magnitude or more under a proper bias. It is helpful in designing the structure of semiconductor photocathodes and choose the optimum conditions of operation.

本文对决定场助InP/InGaAsP半导体光电阴极量子效率的诸因素进行了详细分析。基于电流连续性方程和量子力学的隧道效应,对阴极吸收层中的电子传输、发射层中的电子转移以及表面电子逸出几率等过程进行了定量计算,得到了在不同场助偏压时,波长与量子效率的关系曲线。计算结果表明,在场助偏压的作用下,可将半导体阴极在0.9—1.25μm范围的量子效率提高两个数量级以上。本文的计算结果对场助半导体阴极的结构设计及工作条件的优化具有一定的帮助。

 
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