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体硅衬底
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  bulk silicon substrate
     CMOS FinFET Fabricated on Bulk Silicon Substrate
     体硅衬底上的CMOS Fin FET(英文)
短句来源
     The results indicated the specific detectivity of PCLT/P(VDF-TrFE) pyroelectric sensors based on porous silicon dioxide and PET plastic film substrates reached 4.2E6 and 3.4E7 cmHz1/2 W-1 respectively, about 1-2 orders of magnitude higher than that of the sensors on bulk silicon substrate formed under the same condition.
     PCLT/P(VDF-TrFE)/PET和PCLT/P(VDF-TrFE)/多孔氧化硅热释电传感器的探测率,比同样制备条件的体硅衬底传感器高1-2个数量级。
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  “体硅衬底”译为未确定词的双语例句
     The continuing growth of mobile communications markets is motivating a steady evolution of radio frequency integrated circuits (RFIC's), and the explosion of interest in high integrated-density, high speed and low power-consumed RFIC is driving the research of novel substrate platforms for the replacement of conventional GaAs or bulk silicon technology, which will reach their physical limits.
     迅速发展的无线通讯技术推动射频集成电路向着高速、低功耗和更高集成度的方向发展,这时,传统的GaAs和体硅衬底平台将面临散热和功率耗散等棘手的问题。 在这种情况下关于新的衬底材料的研究应运而生。
短句来源
     The numeric simulation of LDMOS and NMOS devices, as well as the experiment of inductors on bulk-Si substrate, demonstrate excellent performance of active devices and passive elements, which validates the feasibility of the compact integration technology for SOI RF IC.
     经过对LDMOS、NMOS的工艺、器件的数值模拟和体硅衬底电感的初步实验,获得了良好的有源和无源器件特性,证明这一简洁的集成工艺方案是可行的。
短句来源
  相似匹配句对
     CMOS FinFET Fabricated on Bulk Silicon Substrate
     衬底上的CMOS Fin FET(英文)
短句来源
     Microwave Integrated Circuits on Silicon Substrates
     衬底微波集成电路
短句来源
     A Tunneling-Based Accelerometer in Bulk Silicon Processes
     隧道加速度计
短句来源
     Microhardness were measured relative to crystal silicon.
     显微硬度相对于衬底测量 ;
短句来源
     Fabrication of the Bulk Silicon MOEMS Optical Switch Array
     MOEMS阵列光开关的制作
短句来源
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  bulk silicon substrate
The stress transition thickness and the initial compressive stress of a GaN epilayer on the SOI substrate are larger than those on the bulk silicon substrate, as shown in in situ stress measurement results.
      
The low-porosity PS layers thus formed on the silicon substrate have a refractive index value (nps = 1.9), which is an intermediate value between bulk silicon substrate (nSi = 3.4) and air (nair = 1.0).
      
Furthermore, the STJs positioned on the membranes and on the bulk silicon substrate show similar current-voltage characteristics.
      
Pure germanium epitaxial growth on thin strained silicon-germanium graded layers on bulk silicon substrate for high-mobility cha
      
Fortunately, the majority of integrated circuit applications use devices fabricated on a bulk silicon substrate.
      
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 single pyroelectric sensor with composite sensing film based on porous silicon dioxide was fabricated The sensing film consists of nanometer-sized particles with lead titanate (PT) embedded in a vinylidene-trifluoroethylene [P(VDF-TrFE)] copolymer The substrate was obtained by wet oxidation of porous silicon formed by electrochemical method The results show that, the figure of merit of PT/P(VDF-TrFE) composite with PT volume fraction of 012 is 20% higher for pyroelectricity and 34% higher for detectivity...

 single pyroelectric sensor with composite sensing film based on porous silicon dioxide was fabricated The sensing film consists of nanometer-sized particles with lead titanate (PT) embedded in a vinylidene-trifluoroethylene [P(VDF-TrFE)] copolymer The substrate was obtained by wet oxidation of porous silicon formed by electrochemical method The results show that, the figure of merit of PT/P(VDF-TrFE) composite with PT volume fraction of 012 is 20% higher for pyroelectricity and 34% higher for detectivity than the pure P(VDF-TrFE) film under the same conditions The current sensitivity of PT/P(VDF-TrFE) sensor based on porous silicon dioxide substrate is about 2 times higher than that of the sensor with the same structure but based on a bulk silicon substrate

用电化学方法制备多孔化率约69%的多孔硅,在湿氧中氧化成多孔氧化硅,作热释电传感器的衬底。将用溶胶凝胶法制备的钛酸铅(PT)纳米粉粒掺入聚偏氟乙烯/三氟乙烯共聚物中形成PT/P(VDFTrFE)热释电复合敏感膜。PT粉粒的掺入体积比为012时,与成膜条件相同的P(VDFTrFE)膜相比,热释电优值提高20%,探测优值提高35%。多孔氧化硅结构降低了衬底的热导率和元件热容,使多孔硅衬底传感器的电流灵敏度比结构相同的体硅衬底传感器样品高约2倍。

Nanosized lead titanate doped with calcium and lanthanum (PCLT) powder obtained by the SolGel method was homogeneously mixed with vinylidene fluoridetrifluoroethylene .The nanocomposite PCLT/P(VDFTrFE) film was used as the sensing film of pyrolectric sensors,whose detective merit was about 22.4% higher than that of sensors using pure P(VDFTrFE).35 nm ITO film was deposited as bottom electrode on PET plastic film substrate,on which PCLT/P(VDFTrFE)was prepared by spincoating,and NiCr film was chosen as...

Nanosized lead titanate doped with calcium and lanthanum (PCLT) powder obtained by the SolGel method was homogeneously mixed with vinylidene fluoridetrifluoroethylene .The nanocomposite PCLT/P(VDFTrFE) film was used as the sensing film of pyrolectric sensors,whose detective merit was about 22.4% higher than that of sensors using pure P(VDFTrFE).35 nm ITO film was deposited as bottom electrode on PET plastic film substrate,on which PCLT/P(VDFTrFE)was prepared by spincoating,and NiCr film was chosen as upper electrode.PET plastic film substrate could effectively decrease the thermal conductivity of the element and ITO bottom electrode could reflect the infrared irradiation.The voltage responsivity was increased and the thermal fluctuation noise of the pyroelectric element was decreased significantly.The experimental results indicated the specific detectivity of PCLT/P(VDFTrFE)pyroelectric sensors based on PET film substrate reached 34×107 cmHz1/2 W-1,more 2 orders of magnitude higher than that of the sensors on bulk silicon substrate formed under the same conditions.

将Sol-Gel法制备的掺钙钛酸镧铅纳米粉粒(PCLT)与聚偏氟乙烯-三氟乙烯(P(VDF-TrFE)均匀复合,作为热释电传感器的敏感膜,比同样制备条件的纯聚偏氟乙烯-三氟乙烯膜的探测优值高约22.4%。并以沉积有35nmITO薄膜的廉价PET塑料为衬底,用旋转涂膜法沉积PCLT/P(VDF-TrFE)复合敏感膜,用Ni-Cr薄膜作上电极,制备了PCLT/P(VDF-TrFE)/PET热释电传感器。PET塑料可有效降低热释电元件的热导,下电极ITO可反射红外辐射,明显提高了传感器的电压响应和降低热释电元件的热噪声。测试结果表明,PCLT/P(VDF-TrFE)/PET热释电传感器的探测率达到3.4×107cmHz1/2W-1,比同样制备条件的体硅衬底传感器高2个数量级以上。

One-dimensional thermal diffusion model is adopted to simulate voltage responsivity of single pyroelelctric sensor. The influence of thermal conduction of different substrates such as PET, porous silicon suspended structure and crystal silicon on the voltage responsivity of pyroelelctric sensor are discussed and stimulated. The simulation results are in agreement with reported experiment data.

采用一维热扩散理论 ,用 Matlab应用软件 ,模拟了热释电单元传感器的电压响应 ,比较 PET塑料衬底、多孔二氧化硅衬底、悬空结构以及体硅衬底的热传导对探测器性能的的影响 ,并与 PCL T/ P(VDF- Tr FE)热释电单元传感器的实验结果作了比较

 
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