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气态源分子束
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  gas source molecular beam
     8-element In_(0.53)Ga_(0.47)As/InP Photovoltaic Detector Array Grown by Gas Source Molecular Beam Epitaxy
     气态源分子束外延8元In_(0.53)Ga_(0.47)As/InP光伏探测器阵列
短句来源
     BEHAVIOR OF Si INCORPORATION IN Al_xGa_(1-x)As(x=0 TO 1) GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY
     气态源分子束外延Al_xGa_(1-x)As(x=0~1)材料中Si的掺杂行为研究(英文)
短句来源
     Gas Source Molecular Beam Epitaxy Growth of Ge x Si 1- x /Si Alloys
     气态源分子束外延生长Ge_xSi_(1-x)/Si异质结合金
短句来源
     Si-doped AlxGa1-xAs layers were grown by gas source molecular beam epitaxy with a constant Si cell temperature for all samples.
     为比较Al組份对Si掺杂浓度的影响,在用气态源分子束外延生长(GSMBE)掺Si n型AlxGa1-xAs(0≤x≤1)的所有样品时,n型掺杂剂Si炉的温度恒定不变.
短句来源
     The uniformity of Φ50 mm and Φ75 mm InGaP/GaAs grown by gas source molecular beam epitaxy was investigated.
     报道了气态源分子束外延 (GSMBE)技术生长的Φ5 0mm ,Φ75mmInGaP/GaAs材料的晶体完整性 ,组分均匀性和表面缺陷密度。
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     A vertical-cavity surface-emitting laser( VCSEL) structure which employs InAsP/InGaAsP strain-compensated multiple quantum wells and InP/InGaAsP distributed Bragg reflector( DBR) mirrors were grown by gas-source molecular-beam epitaxy( GSMBE) on InP( 100) substrates.
     采用气态源分子束外延(GSMBE)技术在InP(100)衬底上生长了InAsP/InGaAsP应变补偿量子阱为有源层和InP/InGaAsP分布布拉格反射镜(DBR)为上、下腔镜的垂直腔面发射激光器(VCSEL)结构。
短句来源
     InP and InAs Based Ⅲ-Ⅴ Compound Materials Grown by Gas-Source Molecular Beam Epitaxy
     气态源分子束外延InP和InAs基Ⅲ-Ⅴ族化合物材料
短句来源
     1.3μm vertical-cavity surface-emitting laser structure grown by GSMBE
     气态源分子束外延1.3μm VCSEL器件结构
短句来源
     Growth of Si/SiGe/Si Heterojunction Bipolar Transistors by Gas-Source Molecular Beam Epitaxy
     用气态源分子束外延生长法制备Si/SiGe/Sinpn异质结双极晶体管
短句来源
     Using homo-junction structure and relative thin linear graded In_xGa_(1-x)As as the buffer layer,extended wavelength InGaAs/InP photo detector series with cut-off wavelength of about 1.9,2.2 and 2.5 μm at room temperature were grown by using GSMBE,and their performances over a wide temperature range were extensively investigated.
     采用气态源分子束外延方法及应用有源区同质结构及较薄的组分渐变InxGa1-xAs缓冲层,研制了波长扩展的InGaAs/InP光伏探测器系列,其室温下的截止波长分别约为1.9μm,2.2μm. 和2.5μm.
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  相似匹配句对
     Study on ultrahigh carbon -doped p -t ype InGaAs grown by gas source molecular beam epitaxy
     气态分子外延生长重碳掺杂p型InGaAs研究
短句来源
     1.3μm vertical-cavity surface-emitting laser structure grown by GSMBE
     气态分子外延1.3μm VCSEL器件结构
短句来源
     Molecular Beam Epitaxy
     分子外延
短句来源
     PERFORMANCE ANALYSIS OF EXTENDED WAVELENGTH InGaAs PHOTOVOLTAIC DETECTORS GROWN WITH GAS SOURCE MBE
     气态分子外延生长扩展波长InGaAs探测器性能分析(英文)
短句来源
     Low Temperature Growth Kinetics of SiGe Alloys by Disilane and Germanium Molecular Beam Epitaxy
     气态分子外延GeSi合金中的低温生长动力学研究
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  gas source molecular beam
Pure-Ge/Si short-period superlattice (SPS) samples consisting of 1.5-monolayer Ge and a 1.4- to 3.8-nm-thick Si layer grown by gas source molecular beam epitaxy (GS-MBE) were studied by double-crystal x-ray diffraction.
      
Indium Phosphide layers grown by gas source Molecular Beam Epitaxy, (MBE) have been studied by positron lifetime spectroscopy using the recently modified pulsed positron beam in Munich.
      
Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy
      
We have realized two dimensional electron gases (2DEGs) in tensile strained silicon (Si) channels between strain relaxed silicon germanium (Si0.70Ge0.30) barriers grown on Si(100) substrates by Gas Source Molecular Beam Epitaxy (GSMBE).
      
Silicon-germanium/silicon (Si1 - xGex/Si, x >amp;lt; 0.50) multiple quantum wells (MQWs) have been grown on (001) Si substrates by gas source molecular beam epitaxy (GSMBE) using disilane (Si2H6) and germane (GeH4) as source gases.
      
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Abstract Good quality(AlxGa1-x) InP(x=0, 0.25, 0.5, and 1) layers and GaIuP/AlInP multiple quantum well structures(MQWS) were grown by gas source molecular beam epitaxy(GSMBE) and characterized by photoluminescenc.(PL), double crystal X ray diffraction(XRD) and Hall measurement.

我们用国产第一台化学束外延(CBE)系统,采用气态源分子束外延(GSMBE)技术研制了与GaAs匹配的,性能良好的(AlGa)InP材料和GalnP/AlInP多量子阱材料.对这些材料进行了霍耳,光致发光(PL),阴极荧光(CL)以及X射线双晶衍射(XRD)等测量分析.

The growth of high-quality InGaP/GaAs heterostructures on(001)GaAs substrates by gassource molecular beam epitaxy(GSMBE)was investigated.InGaP epilayers with lattice mismatch△α/α < 8.95 × 10 ̄(-5) and residual carrier concentrations as low as 10 ̄(15)cm ̄(-3) were obtained.The con-trollable carrier concentration region for Si-doped n-type InGaP is from 2 × 10 ̄(15)to 4 × 10 ̄(18)cm ̄(-3)The influence of the method to change the group-V molecular beams from As_2 to P_2(or from P_2 toAs_2)was studied in order to obtain...

The growth of high-quality InGaP/GaAs heterostructures on(001)GaAs substrates by gassource molecular beam epitaxy(GSMBE)was investigated.InGaP epilayers with lattice mismatch△α/α < 8.95 × 10 ̄(-5) and residual carrier concentrations as low as 10 ̄(15)cm ̄(-3) were obtained.The con-trollable carrier concentration region for Si-doped n-type InGaP is from 2 × 10 ̄(15)to 4 × 10 ̄(18)cm ̄(-3)The influence of the method to change the group-V molecular beams from As_2 to P_2(or from P_2 toAs_2)was studied in order to obtain an abrupt heterointerface. The InGaP/GaAs heterojunction bipo-lar transistors(HBTs)prepared by using the heterostructures grown by GSMBE in this work exhibitexcellent static and high-frequency performance,with the cutoff frequency fT=25GHz,the maximumoscillation frequency f_(max)=46GHz,the current gain β=40 with the highestβ=150.

本文研究了InGaP/GaAs异质结构的气态源分子束外延(GSMBE)生长,所得样品晶格失配率△α/α<8.95×10 ̄(-5),本底载流子浓度为10 ̄(15)cm ̄(-3)数量级,掺硅n型样品的载流子浓度控制范围可达2×10 ̄(15)~4×10 ̄(18)cm ̄(-3)。研究了P_2和As_2气氛的切换条件对InGaP/GaAs异质结构界面特性的影响,并成功地生长了InGaP/GaAs异质结双极晶体管(HBT)结构材料,用此材料在国内首次制成的HBT器件fr=25GHz,f_(max)=46GHz,电流增益β=40,最高可达β=150。

Abstract We report on the growth and properties of the InAs and InP based Ⅲ-Ⅴ compounds grown in our laboratory by gas source molecular beam epitaxy technique (GSMBE)using the first China-made chemical beam epitaxy(CBE) system. These grown materials are the lattice-matched Iny (Ga1-xAlx)1-yP (x = 0 ̄1, y≈0. 50) , InGaP/InAlP multiple quantum wells (MQWs)on GaAs (100) substrates, the lattice-matched Inp, InGaAs, InGaAs/InAlAs high electron mobility transistor (HEMT) structures, InGaAs/InP MQWs and the strained-layer...

Abstract We report on the growth and properties of the InAs and InP based Ⅲ-Ⅴ compounds grown in our laboratory by gas source molecular beam epitaxy technique (GSMBE)using the first China-made chemical beam epitaxy(CBE) system. These grown materials are the lattice-matched Iny (Ga1-xAlx)1-yP (x = 0 ̄1, y≈0. 50) , InGaP/InAlP multiple quantum wells (MQWs)on GaAs (100) substrates, the lattice-matched Inp, InGaAs, InGaAs/InAlAs high electron mobility transistor (HEMT) structures, InGaAs/InP MQWs and the strained-layer In(AsP)/InP MQWs on InP(100) substrates.

本文简要报告我们气态源分子束外延实验结果.材料是GaAs(100)衬底上外延的晶格匹配的Iny(Ga1-xAlx)1-yP(x=0~1,y=0.5),InGaP/InAlP多量子阱;在InP(100)衬底上外延的InP,晶格匹配的InGaAs、InAlAs以及InP/InGaAs、InP/InAsP多量子阱,InGaAs/InAlASHEMT等.外延实验是用国产第一台化学束外延(CBE)系统做的.

 
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