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在硅
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  in silicon
     The threshold electric field of delayed propagation of the crack in silicon oil is EDP=0.2 kV/cm.
     压痕裂纹在硅油中滞后扩展的门槛电场强度EDp=0.2 kV/cm.
短句来源
     The behaviors of phosphorous diffusion in silicon were studied by Four-Point Probe (FPP), Spreading Resistance Profiles (SRP) and other equipments.
     处理后,利用四探针法(Four-Poim Probe,FPP)、扩展电阻法(Spreading Resistance Profiles,SRP)等研究了磷在硅中的扩散.
短句来源
     movement distance of particle in silicon is approximately 40μm.
     粒子在硅中运动的距离约在40μm。
短句来源
     The results of DLTS measurement show that the primary defects are the divacancy E4 and E3 defects in Silicon radiated by pulse neutron and that the densities of the oxygen-vacancy and the divacancy E2(V2-) are very low.
     DLTS测量表明,脉冲中子辐照(Φn=8.6×1013n/cm2)在硅中引入的缺陷主要是双空位E4和E3缺陷,氧空位和双空位缺陷强度很低。
短句来源
     The neutral sulphur atom in silicon lies in Ec-0.39eV, which is a deep donor level.
     中性硫原子在硅中为处于E_c-0.39eV的深施主能级.
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  “在硅”译为未确定词的双语例句
     Non-Rutherford Elastic Scattering Cross Sections for 160° Backscattering of 1.30-2.21 MeV Protons on Silicon
     1.30-2.21MeV质子在硅上的160°散射截面测量
短句来源
     When the content of free silicon was 22.4 vol%, flexural strength and fracture toughness reached the maximum values, 386 MPa and 4.19 MPa·m1/2 respectively.
     抗弯强度和断裂韧性在硅体积含量为22.4%时达到最高,分别为386MPa和4.19 MPa·m1/2。
短句来源
     The maximum Er concentration in Er implanted Si and SiO2 is 4.71×1021 cm–3 and 7.67×1021 cm–3 respectively.
     在硅和氧化硅中,最大 Er 体浓度分别达到 4.71×1021 cm–3 和7.67 ×1021 cm–3,远超过了常规方法所能得到的 Er 掺杂浓度。
短句来源
     It is found that two kinds of defects E_1(E_c-0.46 eV) and E2 (Ec-0.04 eV) are generated in the sample.
     发现等离子体氧轰击在硅中引入两个缺陷E_1(E_c—0.46eV)及E_2(E_c—0.04eV)。
短句来源
     We have prepared the Bi3 25La0.75Ti3O12/Bi4Ti3O12/Si Metal-Ferroelectrics-Semiconductor (MFS) structures. The Sol-Gel method was used to deposit Bi3.25La0.75Ti3O12 thin films on p-Si substrates with a BuTi3O12 buffer layer.
     利用溶胶-凝胶(sol—gel)方法,在硅基底上制备了Bi3.25La0.75Ti3O12/Bi4Ti3O12/Si铁电薄膜,其中Bi4Ti3O12作为缓冲层.
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  相似匹配句对
     A LOW TEMPERATURE SILICON THERMOMETER
     低温温度计
短句来源
     Nutrition of silicon
     营养
短句来源
     THE CHEMISORPTION OF RARE EARTH ELEMENT ON Si(111) SURFACE
     稀土元素表面的化学吸附
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  in silicon
When the energy in silicon lattice reaches its maximum value, the bonds of silicon atoms are broken and the material is removed.
      
The analysis of the shape of X-ray diffraction patterns and the dynamics of the changes in silicon atomic structure were described within the framework of three-fraction model.
      
Quantum-Chemical Study of the Electron-Donating Ability of Endocyclic Nitrogen and Oxygen Atoms in Silicon-Substituted Silatrane
      
As an example, the distribution of the temperature and stresses in silicon dioxide particles is considered.
      
The dominance of dissolution on the concave side of the plates indicates the negative sign of the surface stress in the glass and in silicon at the interface with the solutions.
      
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本文根据实验结果,叙述不同腐蚀剂对于硅的表面复合速度S的影响及其时间稳定性。简短地论述了利用稳定光电导测量S方法的实质,介绍了运算公式及实验设备。指出了在怎样的条件下进行表面处理才能正确测量硅的体寿命。同时也表明了硅的电阻率对表面复合速度的影响。由实验数据证明,在10%的KOH水溶液中进行腐蚀,能够在硅表面上得到较低的复合速度。

Discussed in this paper are (1) the technique of removing thin layers of silicon by the anodic oxidation method; (2) the measurement of the sheet conductance of diffused layers in silicon by the four-point probe method; and (3) the measurement of impurity distribution of diffused layers in silicon by the four-point probe and the anodic oxidation technique.

本文讨论了:(1)用阳极氧化法在硅片表面去层的技术;(2)用四探针测量扩散层面电导的方法;(3)用阳极氧化去层及四探针测量面电导方法求得扩散层精细杂质分布。 文中着重讨论了实验技术中的实际问题,如如何在阳极氧化过程中取得精细而均匀的去层(300—1500);如何控制及测量去层厚度;测量面电导及杂质分布时的误差来源及减小误差的措施。 以典型的磷在硅中扩散的杂质分布测量为例:扩散深度为4.9μm,测量间距为400—1600,面电导测量误差估计小于3%,杂质分布误差估计小于20%。简单地提出了一些测量中尚待进一步解决的问题。

Detailed distributions of diffusion of phosphorus into silicon have been measured by the four-point probe method. During the measurement, each successive layer is removed by the anodic oxidation technique. These impurity distributions are found to deviate from the error function complement even with the surface concentration kept constant during diffusion. If it is assumed that this is due to a concentration denpendence of the diffusion coefficient, the experimental results would indicate that the diffusion...

Detailed distributions of diffusion of phosphorus into silicon have been measured by the four-point probe method. During the measurement, each successive layer is removed by the anodic oxidation technique. These impurity distributions are found to deviate from the error function complement even with the surface concentration kept constant during diffusion. If it is assumed that this is due to a concentration denpendence of the diffusion coefficient, the experimental results would indicate that the diffusion coefficient rises very rapidly when the concentration exceeds 1019/cm3.

用四探针测量薄层电导方法及阳极氧化去层技术,测定了磷在硅中扩散的具体分布,在恒表面浓度下,它们偏离余误差函数分布。如认为这是由于扩散系数是杂质浓度的函数,实验得到了当杂质浓度大于10~(19)原子/厘米~3时,扩散系数随杂质浓度增加而增大的强烈依赖关系。 用同样方法测定了磷通过二氧化硅层后在硅中扩散的具体分布,研究了这些杂质分布的特性,实验表明,不同厚度的氧化层在1300℃高温下仍具有掩蔽效应,在完全掩蔽失效时间附近,杂质分布的共同特点是表面浓度较低(~10~(17)原子/厘米~3)、结较浅(~1微米)。对不同厚度的氧化层,经过足够的时间后,硅中表面浓度不受氧化层厚度的影响,而只由扩散源的蒸气压决定。磷通过氧化层后扩散的具体分布情况还与扩散源的性质、条件等密切相关。扩散过程中观察到的氧化层厚度增长有可能影响表面附近杂质的具体分布情况。

 
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