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初始氧化物
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  initial oxide
     The experimental data have shown that reducing E’ center and tri valence silicon dangling bond defects at Si/SiO 2 interface in fluorinated oxides result in less generation of initial oxide charges and interface states induced by processes.
     其结果表明 :F减少工艺过程引入栅介质的 E’中心缺陷和补偿 Si/ Si O2 界面 Si悬挂键的作用 ,将导致初始氧化物电荷和界面态密度的下降 ;
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  “初始氧化物”译为未确定词的双语例句
     It's initial oxiding growth processis the formation of island as metal aluminum, but the growing time is greatly shorter.
     铝镀层与金属铝相似,初始氧化物均以岛状形式生长,但岛状生长时间缩短。
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  相似匹配句对
     Lubricating Role of Oxides
     氧化物的润滑作用
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     Preparation of Oxides
     氧化物的制取
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     initial pH;
     初始 pH值 ;
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     The Initiation of the Setups for Computer Router
     路由器初始设置
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     Effects of pH, ferric oxides dosage and initial dye concentration on photochemical decoloration of the dye solutions were studied in detail.
     讨论了不同pH值、氧化物投加量和染料初始浓度对光化学脱色的影响。
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  initial oxide
The influence of the reaction conditions (dispersity of the initial oxide, temperature, time, and composition of the gas phase in the reaction zone) on the structural characteristics of the crystalline products was studied.
      
Effect of coalescence and of the character of the initial oxide on the photoluminescence of ion-synthesized Si nanocrystals in S
      
Regardless of the composition of the initial oxide mixture, similar reaction products are formed during the reaction.
      
As oxygen vacancies are accumulated (i.e., during reduction), the number of oxygen vacancy-low charge cation complexes in the initial oxide increases.
      
The total composition of the oxide phase in the range of a crystal lattice of a certain type changes continuously from the initial oxide to the end product of reduction, i.e., to the lower oxide or a metal.
      
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The ionizing radiation effects and hardness mechanism in fluorinated MOS structures have been investigated systematically. The experimental data have shown that reducing E’ center and tri valence silicon dangling bond defects at Si/SiO 2 interface in fluorinated oxides result in less generation of initial oxide charges and interface states induced by processes. The existing form of fluorine in fluorinated gate oxides is mainly the F ions and ...

The ionizing radiation effects and hardness mechanism in fluorinated MOS structures have been investigated systematically. The experimental data have shown that reducing E’ center and tri valence silicon dangling bond defects at Si/SiO 2 interface in fluorinated oxides result in less generation of initial oxide charges and interface states induced by processes. The existing form of fluorine in fluorinated gate oxides is mainly the F ions and Si F bonding. The relaxation of Si/SiO 2 interface stress due to the replacement of Si O strain bonds by Si F bonds and the replacement of Si H weak bonds by Si F strong bonds is the mechanism of ionizing radiation hardening. The decreasing radiation induced leakage currents in fluorinated CMOS circuits should be attributed to less formation of oxide charges in field oxides.

对含 F MOS结构的抗电离辐射特性和机理进行了系统研究。其结果表明 :F减少工艺过程引入栅介质的 E’中心缺陷和补偿 Si/ Si O2 界面 Si悬挂键的作用 ,将导致初始氧化物电荷和界面态密度的下降 ;栅 Si O2 中的 F主要以 F离子和 Si- F结键的方式存在 ;含 F栅介质中部分 Si- F键替换 Si- O应力键而使 Si/ Si O2 界面应力得到释放 ,以及用较高键能的 Si- F键替换 Si- H弱键的有益作用是栅介质辐射敏感性降低的根本原因 ;含 F CMOS电路辐射感生漏电流得到抑制的主要原因是场氧介质中氧化物电荷的增长受到了明显抑制。

The initial oxidation of Al ion-plating coating on uranium is in situ studied by AES and EELS at room temperature in super high vacuum oxygen atmosphere. The oxiding behavior of the ion-plating coating is difference from metal aluminum. The initial oxygen absorption and oxiding rates are much paster than of aluminum metal. It's initial oxiding growth processis the formation of island as metal aluminum, but the growing time is greatly shorter.

利用电子能量损失谱(EELS)和俄歇电子能谱(AES)原位研究了铀表面离子镀铝改性层在室温,氧气超高真空环境中的初始氧化行为。铝镀层初始氧化行为与金属铝不同,铝镀层表面初始吸附、氧化速度快于金属铝,钝化能力比金属铝强。铝镀层与金属铝相似,初始氧化物均以岛状形式生长,但岛状生长时间缩短。

>=With the help of thermodynamics, the oxide metallurgy with Ti treatment of low carbon steel is theoretically analysed. The optimum conditions of molten steel for forming titanium oxide are defined and predicted by the thermodynamics analysis. The oxide growth during solidification is researched on the basis of a diffusion growth model. It is found that the increase in the diameter of oxide which grows during solidification is larger when the size of oxide before solidification and cooling rate during solidification...

>=With the help of thermodynamics, the oxide metallurgy with Ti treatment of low carbon steel is theoretically analysed. The optimum conditions of molten steel for forming titanium oxide are defined and predicted by the thermodynamics analysis. The oxide growth during solidification is researched on the basis of a diffusion growth model. It is found that the increase in the diameter of oxide which grows during solidification is larger when the size of oxide before solidification and cooling rate during solidification are smaller. A useful method of distinguishing the categories of oxides was found according to their diameters and cooling rates.

本文通过研究含钛低碳钢的热力学,确定了形成氧化钛的最佳钢液条件。在溶质元素偏析和扩散的基础上,建立了凝固过程氧化物长大模型。计算结果表明,冷却速率对凝固过程氧化物的长大有重要影响。冷却速率越小,凝固过程氧化物长大的尺寸越大。凝固前初始氧化物直径越小,凝固过程氧化物长大的尺寸越大。此外,可以根据冷却速率和凝固后氧化物的直径判断氧化物是凝固前形成的一次氧化物还是凝固过程中产生的二次氧化物。

 
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