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激光器芯片
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  laser chip
     The Design of 1550nm Ridge Waveguide High Speed Laser Chip
     1550nm脊波导高速激光器芯片设计
短句来源
     The main assignment is the design of the 1550nm RW laser chip.
     发射波长为1550nm的脊波导高速激光器芯片设计是本课题的主要任务。
短句来源
     Using thesemiconductor laser chip as a saturable absorber, this laser has been self-Q-switched for a launched pumpingpower of 9mW.
     采用半导体激光器芯片作为饱和吸收体,在9mW的泵浦功率下,该激光器实现了自调Q脉冲输出。
短句来源
     The cavity of this laser is consistedof a linear optical fiber loop mirror and a rear reflecting mirror of semiconductor laser chip.
     该激光器利用线性光纤环形镜和半导体激光器芯片的背向反射镜组成谐振腔。
短句来源
     A hybrid semiconductor laser is fabricated by combining an anti reflection coated F P laser chip with an in fiber Bragg grating (FBG). The cavity length is about 3 cm and the peak reflection of the FBG is 50%.
     利用一个一端镀有增透膜的F-P腔半导体激光器芯片和一段反射率为50%的光纤光栅组合成一混合腔激光器,腔长约为2cm。
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  “激光器芯片”译为未确定词的双语例句
     Measurement of 3db Bandwidth of Laser Diode Chips
     半导体激光器芯片3dB带宽的测量(英文)
短句来源
     (1)Finding out the principles of the two-dimensional finite element method for temperature field simulation of high power laserThe profile and boundary conditions of the chip and submount of the high power laser is simply, we adopt the right-angled triangle cell to divide the submount and chip of the laser into triangular elements.
     大功率半导体激光器芯片与载体具有规整的外形和多个边界条件,所以我们对激光器载体和芯片都采用了直角三角形单元进行有限单元剖分。
短句来源
     In this paper, various factors effecting the modulation bandwidth of ultrahigh speed semiconductor laser modules are described.
     本文叙述了影响超高速半导体激光器组件调制带宽的各种因素:激光器芯片的驰豫振荡频率;
短句来源
     The results show, according to phase difference of counterpropagating light fields in a fiber loop, the optical feedback which is consisted of afiber coupler and LD chip can feedback light fields into the erbium-doped fiber selectively,and the laser can generate optical pulses with increasing amplitude. Optical pulses lead to transient gain saturation of the erbium-doped fiber, which will result in self- Q- switching in the laser.
     结果表明,该激光器中由光纤耦合器和半导体激光器芯片组成的反馈光路,依据光纤环中相向传输激光场相差的不同,对进入掺铒光纤的激光场进行选择反馈,在光纤环中激发幅度不断增强的光脉冲,引起掺铒光纤的瞬态增益饱和,实现激光器的自调Q。
短句来源
     The epitaxial structure for LD is an optimized SQW GRIN SCH structure, and cm bars are made with a fill factor of 60%.
     激光器的生长结构采用经过优化的单量子阱渐变折射率分别限制波导结构 ,激光器芯片结构为标准的CM条 ,注入因子设计为 6 0 %。
短句来源
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  相似匹配句对
     Measurement of 3db Bandwidth of Laser Diode Chips
     半导体激光器芯片3dB带宽的测量(英文)
短句来源
     The basic rules of laser including:
     所以,从激光器
短句来源
     Blue dye laser
     蓝色染料激光器
短句来源
     Microfluidic chips
     微流芯片
短句来源
     The Design of 1550nm Ridge Waveguide High Speed Laser Chip
     1550nm脊波导高速激光器芯片设计
短句来源
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  laser chip
Within this concept one facet of the diode laser chip is used for coupling to a high quality Littman/Metcalf resonator whereas the other side of the diode laser chip emits the output beam.
      
The FGECL was fabricated by the assembly of the multimode Fabry-Perot (FP) laser chip and fiber grating.
      
Each generation used the same laser chip and basic reentrant cavity design.
      
Each laser chip carrier is In-soldered onto a copper block, which serves as a heat sink and as the ground contact for the laser.
      
Figure 1 illustrates the detailed schematic structure of an epi-down bonded GaAs based laser chip on a mounting substrate.
      
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In this paper, various factors effecting the modulation bandwidth of ultrahigh speed semiconductor laser modules are described. These factors are the relaxation oscillation frequency of LD chip, the parasitic parameters of LD chip and module, and the driving circuit frequency characteristics of lasers. Optimum design considerations of ultrahigh speed semiconductor LD module are presented. Finally,possibilities of further extending the bandwidth of module are discussed.

本文叙述了影响超高速半导体激光器组件调制带宽的各种因素:激光器芯片的驰豫振荡频率;芯片及组件的寄生参量以及激光器匹配驱动电路的频率特性。文中还讨论了超高速半导体激光器组件的最佳设计。最后,讨论了进一步提高组件调制带宽的可能性。

The mechanism of a novel structure self-Q- switched erbium-doped fiber ring laser has been investigated. The results show, according to phase difference of counterpropagating light fields in a fiber loop, the optical feedback which is consisted of afiber coupler and LD chip can feedback light fields into the erbium-doped fiber selectively,and the laser can generate optical pulses with increasing amplitude. Optical pulses lead to transient gain saturation of the erbium-doped fiber, which will result in self-...

The mechanism of a novel structure self-Q- switched erbium-doped fiber ring laser has been investigated. The results show, according to phase difference of counterpropagating light fields in a fiber loop, the optical feedback which is consisted of afiber coupler and LD chip can feedback light fields into the erbium-doped fiber selectively,and the laser can generate optical pulses with increasing amplitude. Optical pulses lead to transient gain saturation of the erbium-doped fiber, which will result in self- Q- switching in the laser. The theoretical analysis is in good agreement with the experiments.

对一种结构新颖的自调Q掺铒光纤环形激光器的工作机理进行了研究。结果表明,该激光器中由光纤耦合器和半导体激光器芯片组成的反馈光路,依据光纤环中相向传输激光场相差的不同,对进入掺铒光纤的激光场进行选择反馈,在光纤环中激发幅度不断增强的光脉冲,引起掺铒光纤的瞬态增益饱和,实现激光器的自调Q。理论分析能较好地解释实验中观察到的现象。

A novel structure erbium-doped fiber laser is reported in this peper. The cavity of this laser is consistedof a linear optical fiber loop mirror and a rear reflecting mirror of semiconductor laser chip. Using thesemiconductor laser chip as a saturable absorber, this laser has been self-Q-switched for a launched pumpingpower of 9mW. Pulses of 12μs full width at half maximum(FWHM) and peak power close to 22mW areobtained. The period of pulses train is 65μs.

研制出一种结构新颖的掺铒光纤激光器。该激光器利用线性光纤环形镜和半导体激光器芯片的背向反射镜组成谐振腔。采用半导体激光器芯片作为饱和吸收体,在9mW的泵浦功率下,该激光器实现了自调Q脉冲输出。输出光脉冲宽度为12μs,脉冲峰值功率约为22mW;脉冲序列的重复周期约为65μs。

 
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