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激光器端面
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  laser facets
     In this work using IL-400 controller and molybdenum boat,prep-aration of long wavelength superlumineseent diode coated by single and double antireflective coating on the semiconductor laser facets have been fabricated, and the spectral characteristics and power are tested after evaporation.
     本实验采用IL-400型膜厚速率控制仪和钼舟,对半导体激光器端面分别蒸镀单层和双层减反射膜来制备长波长超辐射发光二极管,并对蒸镀减反射膜后器件的功率特性和光谱特性方面进行了测试。
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  “激光器端面”译为未确定词的双语例句
     A high-power LD-end-pumped passively Q-switched Nd∶LuVO_4 laser at 1. 06 μm is reported,with a Cr~(4+)∶YAG crystal as the passively Q-switched component.
     采用大功率半导体激光器端面泵浦Nd∶LuVO4晶体,利用Cr4+∶YAG晶体作为可饱和吸收元件,实现了1.06μm激光的被动调Q运转.
短句来源
     Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In_(0.25)Ga_(0.75)As as Output Coupler
     半导体激光器端面泵浦 Nd∶YAG激光器用In_(0.25)Ga_(0.75) As吸收体被动锁模兼做输出镜(英文)
短句来源
     HIGH-POWER HIGH-EFFICIENCY Nd∶YVO_4/KTP INTRACAVITY-DOUBLED GREEN LASER END-PUMPED BY A DIODE-LASER-ARRAY
     半导体激光器端面泵浦高功率高效Nd:YVO_4/KTP腔内倍频连续绿光激光器研究
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     Theory and Analysis of Laser Diode End pumped Nd:Ti:LiNbO_3 Waveguide Laser
     半导体激光器端面抽运NdvTivLiNbO_3波导激光器理论与分析
短句来源
     A diode laser,the nominal wavelength is 0.78μm,was used to end-pumped a Nd:YAG rod. The CW output of 1.064μm wavelength laser was obtained.
     采用标称波长为0.78μm 的半导体激光器,端面光泵 Nd:YAG 棒,获得了1.064μm 波长激光的连续输出。
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  相似匹配句对
     THE OPTIMIZATION OF REFLECTIVITY ON END SURFACE OF SEMICONDUCTOR LASER
     半导体激光器端面反射率的优化
短句来源
     Plating Film on Facets of 808nm Semiconductor Laser
     808nm激光器端面镀膜技术
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     Blue dye laser
     蓝色染料激光器
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     Laser Q-Switching
     激光器Q调
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  laser facets
Control of the tuning range by antireflection (AR) coating of laser facets is also predicted.
      
Chemically assisted ion beam etching (CAIBE) involving an Ar ion beam and a halogen ambient gas (Cl2, IBr3) has been used to etch high-quality laser facets for InGaAsP/InP bulk lasers (1.55 μm).
      
Chlorine ion-beam-assisted etching (IBAE) has been used to micromachine laser facets and deflecting mirrors for monolithic two-dimensional GaAs/AIGaAs laser arrays.
      
The structural modification of the laser facets, as probed by micro-Raman spectroscopy and Rutherford backscattering spectroscopy, and the calibration technique used to assess the rate of oxide removal are also presented.
      
Also, the sidewall smoothness of the laser facets has received attention recently.
      
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Monitoring the spontaneous emission from the semiconductor laser to be coated, using vapour deposition technique, we have succeeded in antireflection coating of the semiconductor laser. In reference to the method proposed by Kaminow et al., the residual reflectivity of the coated face of the laser diode is measured to be 5×10_(-4).

用真空热蒸发技术,监测被镀器件的自发辐射,在GaAs半导体激光器端面上成功地制备了高效减反射膜。用Kaminow等人提出的间接方法测得其剩余反射率为5×10~(-4)。

It is very difficult to realize the high efficient antireflection (AR) film coating on the facets of laser diode with the conventional monitoring technique for control the film thickness.In this work,the feasibility of monitoring AR film coating on the facets of semiconductor laser via detecting the spontaneous emission from the laser diode has been investigated theoretically and experimentally.The method proposed by Kaminow et al.has been adopted to measure the modal reflectivi- ty of the AR coaling on the...

It is very difficult to realize the high efficient antireflection (AR) film coating on the facets of laser diode with the conventional monitoring technique for control the film thickness.In this work,the feasibility of monitoring AR film coating on the facets of semiconductor laser via detecting the spontaneous emission from the laser diode has been investigated theoretically and experimentally.The method proposed by Kaminow et al.has been adopted to measure the modal reflectivi- ty of the AR coaling on the facets of the GaAs laser.The results have shown that a single layer of AR coating with a reflectivity of less than 5×10~(-4) has been obtained

采用常规膜厚监控方法在二极管激光器端面镀高效减反射膜有很多困难。本文从理论上研究了自发光监测控制减反射膜的可行性,并且得到了用这种方法在半导体激光器端面镀高效减反射膜的实验结果。利用 Kaminow 等人提出的间接测量法,测得在 GaAs 激光器端面镀制了单层 SiO 膜后的剩余反射率小于5×10~(-4)。

Two principles have been proposed for the active monitoring method, adopted to the AR Coating semiconductor lasers and based on detecting the derivatives of the outputs from the facets to be coated. The principles have been used to guide the AR coating experiments and to improve the reliability of the experiments.

理论研究导出了用微分功率输出监控半导体激光器端面减反射膜制备的主动监控法的两条原则。遵循这两原则完成了减反射膜的镀制,显著提高了主动监控法的可靠性。

 
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