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硅单晶    
相关语句
  silicon crystal
    Measurement of the Stress in Silicon Crystal.
    硅单晶中应力观测
短句来源
    Revealing of Swirl Defects in Silicon Crystal through Copper Decoration Etching
    硅单晶漩涡缺陷的铜缀饰腐蚀显示
短句来源
    A Study of the Distribution of the Stresses and the Slip Dislocation of the Silicon Crystal
    硅单晶的滑移位错与应力分布的研究
短句来源
    MEASUREMENT AND STUDY OF THE STRESSES IN SILICON CRYSTAL WITH INFRARED POLARISCOPE
    用红外光弹仪测量研究硅单晶应力
短句来源
    A STUDY ON AS-GROWN SWIRL DEFECTS IN CZ SILICON CRYSTAL
    直拉硅单晶原生漩涡缺陷的研究
短句来源
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  silicon single crystal
    The Structure of and the Defects in the Twin Interface of Silicon Single Crystal
    硅单晶中孪生界面的结构和缺陷
短句来源
    INVESTIGATION OF OHMIC CONTACT ON HIGH RESISTIVITY SILICON SINGLE CRYSTAL
    高阻硅单晶欧姆接触的研究
短句来源
    Oxygen Control Technology for Large Diameter CZ Grown Silicon Single Crystal
    大直径CZ硅单晶的控氧技术
短句来源
    Growth Characteristics of Φ 200 mm Silicon Single Crystal
    Φ200mm硅单晶的生长工艺特点
短句来源
    Growth Problems Analysis of Ф100mmm<111>Silicon Single Crystal
    4英寸<111>硅单晶制备中的“断棱”与“掉苞”问题
短句来源
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  single crystal silicon
    A Calibration Curve for Measuring Oxygen Content in Single Crystal Silicon by 9μm Infrared Absorption Method
    9微来红外吸收法测定硅单晶中氧含量的标定曲线
短句来源
    Comparison Experiments Between the NIM and NBS Standard Slices for Single Crystal Silicon Resistivity
    NIM-IC型半导体硅单晶电阻率标准样片与NBS的SRM型标准样片的比较实验
短句来源
    In our experiment, the d {533} of a single crystal silicon is measured. The accuracy of measurement is about 8×10-cnm.
    本实验测量了硅单晶d{533}晶面间距,其精度可达8×10~(-6)nm.
短句来源
    The N-doped and N-undoped single crystal silicon under different conditions was investigated by means of Fourier Transfosm Infrared Spectroscope (FTIR) at room temperature (300K) and low temperature (SK). The experiments pointed out that the 1030cm-1, 1000cm-1 and 806cm-1 optical absorption lines are related to the nitrogenoxygen complex in nitrogen-doped CZ silicon.
    对不同条件下含氮和不含氮的硅单晶,在300K和8K下进行红外吸收研究.实验结果表明:含氮硅单晶和氮一氧复合体相关的红外吸收峰为1030cm-1,1000cm-1和806cm-1.
短句来源
    The Surface photovoltaic Effect of Single Crystal Silicon
    硅单晶的表面光伏效应
短句来源
更多       
  single crystal silicon
    A Calibration Curve for Measuring Oxygen Content in Single Crystal Silicon by 9μm Infrared Absorption Method
    9微来红外吸收法测定硅单晶中氧含量的标定曲线
短句来源
    Comparison Experiments Between the NIM and NBS Standard Slices for Single Crystal Silicon Resistivity
    NIM-IC型半导体硅单晶电阻率标准样片与NBS的SRM型标准样片的比较实验
短句来源
    In our experiment, the d {533} of a single crystal silicon is measured. The accuracy of measurement is about 8×10-cnm.
    本实验测量了硅单晶d{533}晶面间距,其精度可达8×10~(-6)nm.
短句来源
    The N-doped and N-undoped single crystal silicon under different conditions was investigated by means of Fourier Transfosm Infrared Spectroscope (FTIR) at room temperature (300K) and low temperature (SK). The experiments pointed out that the 1030cm-1, 1000cm-1 and 806cm-1 optical absorption lines are related to the nitrogenoxygen complex in nitrogen-doped CZ silicon.
    对不同条件下含氮和不含氮的硅单晶,在300K和8K下进行红外吸收研究.实验结果表明:含氮硅单晶和氮一氧复合体相关的红外吸收峰为1030cm-1,1000cm-1和806cm-1.
短句来源
    The Surface photovoltaic Effect of Single Crystal Silicon
    硅单晶的表面光伏效应
短句来源
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  silicon crystal
Extraction of a 70-GeV/cProton Beam to the RAMPEX Setup by Using a Silicon Crystal
      
The experimental data on the formation of a stable proton beam with a 70-GeV/cmomentum extracted from the U-70 accelerator (Protvino) to the 14th channel with a bent silicon crystal (under conditions of operation of several setups) are presented.
      
A method for extracting a proton beam from the U-70 IHEP synchrotron using a bent silicon crystal at a simultaneous operation of several internal targets is described.
      
The use of a KX605A silicon crystal in the instrument as the sensor unit is substantiated.
      
The use of the extended multipole model for a silicon crystal revealed some new specific features of the electronic structure: consideration of multipoles up to the 7th order makes it possible to explain the intensity of the forbidden 222 reflection.
      
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