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双极性晶体管
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  bipolar transistor
     A method to simulate the characteristics of Insulated Gate Bipolar Transistor (IGBT) with Protel 99SE in this paper. use the outside characteristics extract & transfer the parameter of IGBT,create the database in Protel 99SE,It's able simulate any type IGBT.
     本文提出一种简便的模拟绝缘栅双极性晶体管 (IG-BT-Insulated Gate Bipolar Transistor)的方法 ,利用外部特性参数提取、换算模型参数 ,通过建立 Protel99SE中的数据库项 ,能够对任意新型号的 IGBT进行仿真。
短句来源
     The most effective converter that fits for such kind of application is a well-known full-bridge three-phase VSI (Voltage Source Inverter) converter with IGBT (Insolated Gate Bipolar Transistor) modules, which can be used in wind power generation system or other general purpose utilizations such as ASD (Adjustable Speed Drive), Active Rectifiers, AC power supplies, and so forth.
     最适合的变换器就是IGBT(集成门极双极性晶体管)三相全桥电压源变换器,这种拓扑结构的变换器可以应用到风力发电系统或者其他通用的场合,比如ASD(变速驱动)系统、有源整流、交流电源等等。
短句来源
     The recent development of pulse modulator is to use solid-state switches such as IGBT (Insulated Gate Bipolar Transistor ) and power MOSFET(Metal Oxide Semiconductor Field Effect Transistor)etc. as substitute for hydrogen thyratrons.
     用IGBT(绝缘栅双极性晶体管)和功率MOSFET(金属氧化物半导体场效应管)等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。
短句来源
     In regard to the calculations of the reciever sensitivity, Personick gave only specific formulae for FET reciever, In this paper the formulae for bipolar transistor reciever are complemented and thus extend the field of application of Personick's method.
     对于接收机灵敏度的计算,Personick只给出场效应管接收机的具体公式。 本文补充了双极性晶体管接收机的计算公式,使Personick方法的应用范围更广。
短句来源
     The paper describes tile 5kW single-phase inverter of the wind generation system in Longshan County,Hunan Province. The inverter,employing insulatedgate bipolar transistor (IGBT) in its main circuit and and CW3524 (PWM) inits control circuit,is simple in structure, high in reliability,effective in function and conuenient for installation. It can be sued in wind generation systemand other inverter system.
     本文介绍了应用于湖南省龙山县熔洞风力发电系统中的5kW单相逆变器装置.该装置主电路采用绝缘栅控双极性晶体管(IGBT),控制电路采用脉定调制器件(PWM)CW3524,具有系统简单、可靠性好、功能强、安装方便等特点.可用于风力发电系统中,也可用于其它逆变器系统中.
短句来源
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  bipolar junction transistor
     Teaching Practice on Equivalent Circuit of Bipolar Junction Transistor
     双极性晶体管等效电路的教学实践
短句来源
     There are three power transistor which have been widely used in S band now: Bipolar Junction transistor (BJT), GaAs Metal-oxide Semiconductor Field Effect Transistor (GaAs MOSFET) and Lateral Diffuse Metal-oxide Semiconductor field effect transistor (LDMOS FET) . Thanks to the advantages, such as, wide frequency , easy power supply, good stability, the LDMOS FET has used in the motion telecommunication .
     目前在S波段人们常用的放大器有双极性晶体管(BJT )、砷化镓场效应晶体管(GaAs MOSFET)、边缘扩散场效应晶体管(LDMOS FET)等,由于LDMOS FET具有频带宽、供电方便、稳定可靠等优势,目前已经广泛用于移动通信3G的研究。
短句来源
     There are three power transistor which have been widely used in L band now:Bipolar Junction transistor (BJT), GaAs Metal-oxide Semiconductor Field EffectTransistor (GaAs MOSFET) and Lateral Diffuse Metal-oxide Semiconductor fieldeffect transistor (LDMOS FET) . Thanks to the advantages, such as, wide frequency ,easy power supply,good stability,the GaAs MOSFET has used in the telecommunication .
     目前,在L 波段人们常用的放大器有双极性晶体管(BJT)、砷化镓场效应晶体管(GaAs MOSFET)、边缘扩散场效应晶体管(LDMOS FET)等,由于GaAs MOSFET具有频带宽、供电方便、稳定可靠等优势,目前已经广泛用于通信的研究。
短句来源
     Kinds of equivalent circuit of bipolar junction transistor introduced for transistor circuit analysis add to the burdens of beginer's study.
     为分析双极性晶体管放大电路而引入的众多双极性晶体管等效模型加重了初学者负担。
短句来源
     Bipolar junction transistor(BJT)has the self-heating phenomena,which seriously affects the properties of transistor.
     对于双极性晶体管,由于自身存在的自加热现象,严重地影响着器件的特性。
短句来源
  “双极性晶体管”译为未确定词的双语例句
     A Numerical Method for Correlating Current Density of the Microwave Power Device Based on Si/Si_(1-x)Ge_x/Si
     基于Si/Si_(1-x)Ge_x/Si异质结双极性晶体管的微波功率器件电流密度的数值拟合计算
短句来源
     In the control system, control signal is achieved mainly by TMS320F2812 digital signal processor , logical process of output signal is implemented by programmable logic CMOS chip GAL20V8. AD sample module , PID arithmetic module , PWM module and dynamic simulation module are designed respectively by C and Compile language.
     电流调节器主电路拓扑采用栅极绝缘双极性晶体管IGBT来构建,通过TMS320F2812 DSP控制器来进行PWM信号开发,输出信号的逻辑处理采用可编程逻辑器件GAL20V8来实现,使用C和汇编语言开发AD采样模块、PID算法模块、PWM模块和动态模拟模块等,实现电流调节器在超导磁体充放电过程中的基本功能,并对其控制策略进行了优化。
短句来源
     Simulation result shows that nearly 100% breakdown voltage of the plane junction can be realized.
     模拟结果显示 ,该结构可以使射频功率双极性晶体管的击穿电压几乎 10 0 %达到平行平面结的理想值
短句来源
     The paper introduces the basic structure,working principle and switching feature of IGBT and its application to the converter used for welding.
     介绍了绝缘门极双极性晶体管(IGBT)的基本结构、工作原理、开关特性,以及在焊接逆变器中的应用。
短句来源
     In this project, MCS-51 is used as the main control unit that can produce several kinds of current and IGBT is employed as the high power output unit which can generate maximum voltage 800 v, maximum current 40 A, and maximum power 6 kW.
     以绝缘栅双极性晶体管(IG BT)作为大功率输出器件,输出最高电压为800V,最大电流为40A,功率可达6kW。
短句来源
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  bipolar transistor
An expression that describes emitter current push-out to the emitter edges with consideration for avalanche multiplication of the current in the collector p-njunction of a bipolar transistor was derived.
      
As the minimum feature size is reduced, the threshold is predicted to decrease sharply due to a growing amplifying effect of the parasitic bipolar transistor.
      
As an example of such heterostructure devices, in general, the first practical bandgap-engineered silicon device, namely, the SiGe heterojunction bipolar transistor, is discussed in more detail.
      
For making the model more illustrative, the MOS structure is considered as an injector (tunnel MOS emitter) of a bipolar transistor.
      
Electrical properties of the InP/InGaAs pnp heterostructure-emitter bipolar transistor
      
更多          
  bipolar junction transistor
A modified Colpitts circuit structure employing the parasitic inductance of BJT (Bipolar Junction Transistor) is also proposed and investigated.
      
Modeling of bipolar junction transistor in FDTD simulation of printed circuit board - Abstract
      
A simple and efficient approximate method to incorporate nonlinear bipolar junction transistor (BJT) into Finite-Difference Time-Domain (FDTD) framework is presented.
      
As a result IGBT's need simple gate drive circuits, but operating frequency at rated current is lower, than that of a bipolar junction transistor with cellular structure.
      
The utility of these models, methods, and criteria is applicable to monolithic bipolar junction transistor, MOS, CMOS, and other device technologies.
      
更多          


In the design of optical fibre communication system, the main problem is the determination of the transmitting distance when the parameters of the fibre, laser and detector are known, and the requirements for bit rate and error rats of the system are given. S. D. Personick's method, is known to be maore satisfactory than the others' for this purpose, in which a group of formulae and curves are available, In this paper we have converted the Personick's standard of r. m. s. pulse width into the full width at half...

In the design of optical fibre communication system, the main problem is the determination of the transmitting distance when the parameters of the fibre, laser and detector are known, and the requirements for bit rate and error rats of the system are given. S. D. Personick's method, is known to be maore satisfactory than the others' for this purpose, in which a group of formulae and curves are available, In this paper we have converted the Personick's standard of r. m. s. pulse width into the full width at half maximum of Gaussian pulse, which may be used in consideration of the restriction of the band width of the fibres imposed on the transmitting distance, in order to facilitate engineering calculation. In regard to the calculations of the reciever sensitivity, Personick gave only specific formulae for FET reciever, In this paper the formulae for bipolar transistor reciever are complemented and thus extend the field of application of Personick's method. The Goell's method joined with the Personick's "penalty" curves may offer a simple method for estimation of reciever sensitivity. Finally, several numerical examples including the case of 5.7 km trial line have been evaluated for comparison.

已知光纤、激光器、探测器的参数和系统传输码率与误码率的要求,如何确定系统可能达到的通信距离,是光纤通信系统总体设计的主要问题。如所熟知,数字光纤通信系统的设计以S.D.Personick方法较完善,已有一套公式和曲线可供使用。本文把Personick的均方根脉宽标准转化为高斯脉冲的半宽,用来考虑光纤带宽对通信距离的限制,以便作工程计算。对于接收机灵敏度的计算,Personick只给出场效应管接收机的具体公式。本文补充了双极性晶体管接收机的计算公式,使Personick方法的应用范围更广。把Personick的“代价”曲线和Goell方法结合起来,可作为一种接收机灵敏度估算的简便方法。最后,列举几个例子作比较,包括5.7公里实验线路的估算。

This paper describes a method of designing active networks by using nullor equivalents as models for op-amps and bipolar transistor circuits.As many as 24 types of dual op-amp GIC circuits are derived on the basis of the 8 types developed by Bruton. Of the 16 types of simulated inductance circuits consisting of two transistors and a minimum number of RC elements,only 8 types are found to be capable, of low loss realization of simulated inductance. And the actual performances obtained from such realization are...

This paper describes a method of designing active networks by using nullor equivalents as models for op-amps and bipolar transistor circuits.As many as 24 types of dual op-amp GIC circuits are derived on the basis of the 8 types developed by Bruton. Of the 16 types of simulated inductance circuits consisting of two transistors and a minimum number of RC elements,only 8 types are found to be capable, of low loss realization of simulated inductance. And the actual performances obtained from such realization are in good agreement with theo-retical calculations.

本文应用零极子等效为运放及双极性晶体管电路的模型,阐述有源网络的设计方法及其应用。文中将Bruton的双放大器GIC电路由八种推演到24种,发现由两只晶体管和最少的阻容元件构成的接地模拟电感共有16种电路,其中8种可以实现低耗模电感。 上述设计方法已借助模拟电感加以实现,实际性能和理论是一致的。

This paper presents a new hybrid method of parameters extraction for semiconductor models,enlarging the selecting- scale of initial parameter values,and the efficiency of parameters extraction is improved also.Finally,three examples are given, and the results are compared with that obtained by the method described in literature.

本文对一般半导体器件模型参数提取提供了一个有效且可靠的方法,着重分析了一个类似于EM3模型的双极性晶体管高频线性增量模型进行参数提取的全过程,同时提出了各种辅助措施以使参数提取工作更加有效和精确.克服了以往方法中收敛结果对参数初值非常灵敏及迭代速度缓慢的缺点,从而扩大了参数初值的选取范围,提高了参数提取效率。使参数初值选择得偏离最佳点在250%左右范围内,都能收敛到该最佳点.在IBM-PC机上调试,通过了参数的提取程序.最后给出3个算例,并与文献中的方法进行了比较.

 
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