We have prepared successfully that the p-i-n structural p-ZnSe (Zn0.65Cd0.35Se-ZnSe MQW)-n-ZnSe SEED (SelfElectro-optic Effect Device) by using MOCVD(Metal Organic Chemical Vapor Deposition)technique and opticelectronic device technology.
Two long-term reliability tests were performed on CMOS/SOS devices developed by our institute. One was for CMOS 4012 and another was a comparative test for CMOS/ SOS devices developed wilh different mask designing and device technology.
The pulse anodic oxidation process is used to etching and insulating film preparation in QCW device process with electrolyte solution of 4∶20∶1∶1 ratio of glycol∶deionization water∶phosphoric acid∶2% hydrochloric acid.
Based on the EbersMoll Model, the physical procedure is described when the bipolar switching transistor switches. All of the delay parameters calculated by the method of ChargeControlled are illustrated. The relation between the delay parameters, loading capability and the parameters of the device process and circuits are indicated.
Based on the theories of ion implantation,projected range distribution and damage mechanism, the dependence of ion implantation process parameters on the device process parameters and the control of implantation quality are explored by citing experiment data from our all-implantation technique in the Si-gate CMOS process.
The results show that device process has certain effects on the threshold voltage uniformity,proper process should be used in the research of the threshold voltage uniformity,in order to reduce the deviation.
结果表明 ,器件工艺对 MESFET阈值电压有一定的影响 ,开展 Ga As MESFET阈值电压均匀性研究应采用适宜的工艺 ,以尽可能减少工艺引起的偏差。
The design and fabrication of InGaP/GaAs double junction tandem solar cells were reported in this paper. The efficiency between 21%～24% (1AM0, 28 ℃) and filling factor between 79%～82% were measured. The problems related to material structure design, device processing as well as performance characterization were also discussed.
It is shown that the proposed lateral emitter can be used in all microelectronic analogues of vacuum tubes, from microwave devices to flat displays, the device technology being substantially integrated.
The method has been demonstrated experimentally at 1 550 nm using compact and conventional device technology.
Thereby surface and thin film analytical tools play a key role and have to be applied from the very beginning of the development of a device technology.
Ion implantation is a well-known standard procedure in electronic device technology for precise and controlled introduction of dopants into silicon.
Laser- and sensitive charge-coupled device technology together with advanced mathematical modelling of photon propagation in tissue has prompted the development of novel optical imaging technologies.