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器件工艺     
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  device technology
     We have prepared successfully that the p-i-n structural p-ZnSe (Zn0.65Cd0.35Se-ZnSe MQW)-n-ZnSe SEED (SelfElectro-optic Effect Device) by using MOCVD(Metal Organic Chemical Vapor Deposition)technique and opticelectronic device technology.
     利用MOCVD技术和光电子器件工艺成功地制备了P-i-n结构的P-ZnSe-(Zn0.65Cd0.35Se-ZnSeMQW)-n-ZnSe自电光效应器件(SEED)。
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     Two long-term reliability tests were performed on CMOS/SOS devices developed by our institute. One was for CMOS 4012 and another was a comparative test for CMOS/ SOS devices developed wilh different mask designing and device technology.
     用本所研制的CMOS/SOS器件作了两项试验,即CMOS/SOS4012长期可靠性试验和不同版图设计、不同器件工艺研制的CMOS/SOS长期可靠性对比试验。
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     Progresses in SiC Device Technology
     SiC器件工艺的发展状况
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     The device technology is studied and tits performance is improved in this dissertation.
     本学位论文对器件工艺、器件的特性进行了研究,改善了探测器的器件工艺和器件性能,有利于器件的进一步实用化,取得了如下结果:
短句来源
     Study on HVMOS Device Technology Compatible with Conventional CMOS Process
     与常规CMOS工艺相兼容的高压MOS器件工艺研究
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  device process
     The pulse anodic oxidation process is used to etching and insulating film preparation in QCW device process with electrolyte solution of 4∶20∶1∶1 ratio of glycol∶deionization water∶phosphoric acid∶2% hydrochloric acid.
     脉冲阳极氧化工艺主要用于器件工艺中的蚀刻与绝缘膜制备,电解液采用乙二醇∶去离子水∶磷酸∶2%盐酸的体积比为40∶20∶1∶1的混合溶液。
短句来源
     Based on the EbersMoll Model, the physical procedure is described when the bipolar switching transistor switches. All of the delay parameters calculated by the method of ChargeControlled are illustrated. The relation between the delay parameters, loading capability and the parameters of the device process and circuits are indicated.
     从埃伯斯-摩尔模型出发,较为详细地介绍了双极型开关晶体管开关时的物理过程,用电荷控制法计算了开关晶体管的各个延时参数,阐明了器件工艺参数及外电路参数与延时、电路带负载能力的关系,指出了在器件或集成电路工艺中如何来保证器件有较短的延时和较强的带负载能力.
短句来源
     Based on the theories of ion implantation,projected range distribution and damage mechanism, the dependence of ion implantation process parameters on the device process parameters and the control of implantation quality are explored by citing experiment data from our all-implantation technique in the Si-gate CMOS process.
     本文运用有关离子注入的原理和射程分布损伤机理等理论,结合作者所在工厂的硅栅CMOS工艺中应用全离子注入技术的实验数据及实践经验,对注入工艺参量与器件工艺参数的相关性及注入质量的控制等进行了探讨;
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     The results show that device process has certain effects on the threshold voltage uniformity,proper process should be used in the research of the threshold voltage uniformity,in order to reduce the deviation.
     结果表明 ,器件工艺对 MESFET阈值电压有一定的影响 ,开展 Ga As MESFET阈值电压均匀性研究应采用适宜的工艺 ,以尽可能减少工艺引起的偏差。
短句来源
     Reliable Temperature Measurement with Thermocouple in Semiconductor device Process
     半导体器件工艺中热电偶可靠性测温
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  device processing
     The InGaAs MSM photodetectors with InP:Fe barrier enhancement layer have beenfabricated by using LP-MOVPE growth and normal device processing.
     采用LP-MOVPE方法及常规器件工艺制成了InP:Fe肖特基势垒增强InGaAsMSM光电探测器。
短句来源
     The problems related to material structure design, device processing as well as performance characterization also have been discussed.
     文中对其材料结构设计、器件工艺制作以及性能测量表征等方面的问题进行了讨论。
短句来源
     The design and fabrication of InGaP/GaAs double junction tandem solar cells were reported in this paper. The efficiency between 21%~24% (1AM0, 28 ℃) and filling factor between 79%~82% were measured. The problems related to material structure design, device processing as well as performance characterization were also discussed.
     研制了InGaP/GaAs串接太阳电池 ,结果表明 ,电池的转换效率在 2 1%~ 2 4%之间 ( 1AM0 ,2 8℃ ) ,填充因子在 79%~ 81%之间 ,并对其材料结构、器件工艺制作以及性能测量表征等进行了讨论。
短句来源
     The problems related to material structure, device processing as well as performance characterization also have been discussed.
     文中对其材料结构、器件工艺制作以及性能测量表征等方面的问题进行了讨论。
     With the improvement on the technology for circuit designing and device processing, great progress has been made in analog ICs in recent years.
     近年来,由于器件工艺水平的提高和电路设计技术的改进,模拟集成电路获得了很大的发展。
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  device technique
     Reduction of the Reverse Current in pn Junction by an Improved Partly Perfect Crystal Device Technique(PCDT)
     部分完美晶体器件工艺的改进和pn结反向电流的降低
短句来源
     THE SEGREGATION OF METAL IMPURITIES IN SILICON AND ITS APPLICATION TO DEVICE TECHNIQUE
     金属杂质在硅中的分凝及其在器件工艺中的应用
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  device technology
It is shown that the proposed lateral emitter can be used in all microelectronic analogues of vacuum tubes, from microwave devices to flat displays, the device technology being substantially integrated.
      
The method has been demonstrated experimentally at 1 550 nm using compact and conventional device technology.
      
Thereby surface and thin film analytical tools play a key role and have to be applied from the very beginning of the development of a device technology.
      
Ion implantation is a well-known standard procedure in electronic device technology for precise and controlled introduction of dopants into silicon.
      
Laser- and sensitive charge-coupled device technology together with advanced mathematical modelling of photon propagation in tissue has prompted the development of novel optical imaging technologies.
      
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  device process
Future prospects for high performance BiCMOS device/process technologies are addressed.
      
A device process using B implantation and subsequent regrowth could on the other hand be limited by the diffusion of B.
      
Compared to conventional manufacturing processes, there are several new aspects in this CdTe device process.
      
On the other hand, silicon has advantages of low cost, high thermal conductivity and well-developed device process technology.
      
This is consistent with our expectations that intra-device process tolerances are very small.
      
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  device processing
These traps are introduced during device processing and are related to the amount of water.
      
This effect can be used to create etch patterns during device processing without prior masking the semiconductors.
      
Our data demonstrate the applicability of liquid-phase epitaxial Si grown over oxidized Si for future use in three-dimensional integrated-device processing.
      
Modeling of diffusion and oxidation in two dimensions during silicon device processing
      
This unique nuclear technique provided an excellent method for optimizing the composition of the BPSG film for device processing.
      
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  device fabrication technology
ELE 463 Solid State Electronic Devices The theory of selected solid state electronic devices and an introduction to device fabrication technology.
      
Modern device fabrication technology is discussed followed by its relationship to device performance.
      
Producing regular microstructures is a time consuming task relying upon the elaborate and expensive semiconductor device fabrication technology.
      
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