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器件制造
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  device fabrication
     This work studies a MOS device fabrication tachnology to form Ti polycide gate, Ti si-licide contacts on S/D regions and shallow PN junctions simultaneously.
     本工作研究了同时形成polycide栅,源/漏硅化钛接触和浅PN结的MOS器件制造技术。
短句来源
     The minimum of the integrated absorption A is located in the same temperature range as that of the room temperature conductivity of a-Si: F films annealed in the same way. EPR assessment of a-Si: F confirms it great thermal stability compared to a-Si: H, opening prospects for a potentially better material for device fabrication.
     总吸收率A的最小值用同一退火方法所测得的室温电导最低点所对应的退火温度一致,EPR测量证明,a-Si:F比a-Si:H具有更好的热稳定性,是颇有希望用于器件制造的较好材料。
短句来源
     The observation of high-resolution TEM show that the new SOI structure can meet the requirements of device fabrication.
     剖面透射电镜照片(XTEM)给出了此SOI结构,高分辨TEM实验结果表明上层硅具有与衬底硅相似的结晶质量可满足器件制造的要求。
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     Dry etching technique for silicon of high aspect ratio in MEMS device fabrication
     MEMS器件制造工艺中的高深宽比硅干法刻蚀技术
短句来源
     Dry etching technique for silicon carbide (SiC) in silicon carbide device fabrication
     碳化硅(SiC)器件制造工艺中的干法刻蚀技术
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  device process
     Ion implantation technique for the fabrication of very high-speed bipolar circuits is discussed in the paper, with emphasis on the ion implantation doping and shallow junction formation and the annealing of the implanted layer in bipolar device process.
     本文讨论了高速双极器件制造中的离子注入技术。 重点讨论在双极器件制造工艺中的离子注入掺杂技术,离子注入形成浅结技术,以及离子注入层的退火技术。
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  device manufacture
     In this dissertation, the intrinsic noise characteristic parameters for BJT/FET device, which is one of the key factors to reflect the low noise device manufacture technique, is researched.
     文章主要研究了BJT/FET器件的本征噪声特性参数,它是反映低噪声器件制造工艺的关键之一。
短句来源
     These results have an important reference value on the research of the lifetime engineering for high-speed power device and device manufacture engineering.
     这些结果对高速功率器件寿命工程研究和器件制造工程都有重要的参考价值 .
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  “器件制造”译为未确定词的双语例句
     Fabricating Metal Micro/Meso-Structures &-Devices
     金属Micro/Meso结构器件制造技术
短句来源
     Study on the Description and Input Method of Micro Devices Manufacturing Feature's Information
     微器件制造特征信息描述与输入方法的研究
短句来源
     The process defect, minor defect and key precess, their impact on quality and reliability, and the control method are introduced.
     重点介绍了国内外半导体器件制造工艺与器件可靠性的相关性报道:工艺缺陷、微缺陷、关键工艺对器件质量和可靠性的影响及其控制方法;
短句来源
     Ion Implantation Technique in the IGCT's Process
     IGCT器件制造中的离子注入扩散技术
短句来源
     In order to meet the demands of engineering project,the nickel base high resistance foil material with resistivity not less than 1.5 μΩ·m,thickness size of 0.01 mm has produced.
     为满足电子器件制造的需要,研制了1种电阻率≥1.5μΩ·m,厚0.01mm,厚度公差±0.001mm的NiMoCrAlSiTi镍基高电阻箔材。
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  device fabrication
Recent device fabrication and experiment results in this field are also presented.
      
Charicteristic of a novel optoelectronic polymer and related device fabrication
      
This review aims to present an overview of the merger of micro-scale technologies and biomaterials in two-dimensional (2D) surface patterning, device fabrication and three-dimensional (3D) tissue-engineering applications.
      
Examples of applications of the SDB multilayer structures in device fabrication are shown.
      
The peculiarities of technological steps for device fabrication (porous-silicon formation and aluminum treatment) are underlined.
      
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  device process
Future prospects for high performance BiCMOS device/process technologies are addressed.
      
A device process using B implantation and subsequent regrowth could on the other hand be limited by the diffusion of B.
      
Compared to conventional manufacturing processes, there are several new aspects in this CdTe device process.
      
On the other hand, silicon has advantages of low cost, high thermal conductivity and well-developed device process technology.
      
This is consistent with our expectations that intra-device process tolerances are very small.
      
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  device manufacture
Three-dimensional micromachining of glass using femtosecond laser for lab-on-a-chip device manufacture
      
As these techniques move from research to industrial manufacture, the capital cost of the equipment and the cost of device manufacture become important, particularly where more than one micromachining technique can meet the performance requirements.
      
Potentiality of the main techniques (VPE, LPE and MBE) and material systems (AIGaAs, InGaAs) is assessed with respect to requirements posed by device manufacture.
      
Alloying is widely used in semiconductor device manufacture to form both ohmic contacts to, and p-n junctions in, the semiconductor body.
      
However, an optimum composition in the range 0.9TeO2 0.1TiO2 was identified, which allows optically transparent thin films to be prepared with high refractive index and offers the potential for practical device manufacture.
      
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The conditions of forming, growing and shrinking of secondary defects in Si wafers during the processes of fabricntion of Si devices are described. Experiments show that : (1) Stacking faults of surface type can be reduced effectively by carefully caemical csching. (2)The oxidation-induced stacking faults can be reduced and eliminated by annealing in N2 gas or oxidizing in HCl-added O2 gas. (3) The oxidation induced stacking faults can be prevented by preoxidation gettering, preoxidation high temperature annealing...

The conditions of forming, growing and shrinking of secondary defects in Si wafers during the processes of fabricntion of Si devices are described. Experiments show that : (1) Stacking faults of surface type can be reduced effectively by carefully caemical csching. (2)The oxidation-induced stacking faults can be reduced and eliminated by annealing in N2 gas or oxidizing in HCl-added O2 gas. (3) The oxidation induced stacking faults can be prevented by preoxidation gettering, preoxidation high temperature annealing or proper impurity diffusion. The mechanism of growing and shrinking of secondary defects is discussed briefly.

本文叙述硅器件制造过程中,硅晶体中二次缺陷形成、生长和缩小的条件。实验指出:(1)用细致的化学腐蚀方法可有效地减少表面型氧化层错。(2)采用N_2气体中退火或掺氯氧化能缩小和消除热氧化层错。(3)采用氧化前吸收、氧化前高温退火或合适的杂质扩散等方法可以防止热氧化层错的产生。本文也可简单地讨论二次缺陷的生长和缩小的机理问题.

This paper deals with two different methods of liquid phase epitaxy growth. ——

本文叙述了液相外延的简单理论及其生长工艺.稳态生长和瞬态生长中的三种冷却技术都是以生长速率取决于溶质向界面的扩散快慢为依据的.砷化镓液相外延所获得的实验结果与理论的一致性证实了本试验是符合扩散理论模式的.瞬态法中的过冷工艺能在几微米到十几微米的范围内获得重复的厚度和良好的表面形态的外延层.对生长厚度在一百微米以上的外延层则稳态法是一种理想的工艺.实验指出:严格舟器的处理,改善系统的密封性,提高保护气氛的纯度以及对生长溶液的高温热处理都会对外延层纯度的提高带来明显的效果.文中列出了各种生长工艺参数对外延层材料的电学性能,厚度控制以及表面形态的影响,并得到了本系统的理想生长工艺条件.薄层外延材料参数能满足器件制造的要求.在变容管和体效应管方面得到了应用,特别是在6毫米体效应管的制作中,得到了更为满意的结果.文章也列出了由瞬态法生长的磷化铟材料液相外延的初步结果.

This paper describes the experimental rasult of the flux-grown lithium ferrite single crystal.In this paper the growth condition of single crystal and the result of magnetic- property measurements are also discussed.The measurements show that this material has 4πMs=3835±230G.,Tc=643±5℃,magnetic moment variations≤±7%(in a range ±100°K arround room-temperature),anisotropy field strength=-287Oe,and ferr- omagnetic resonance line width ⊿H=5.8Oe。 The success in making these kinds of Single crystal will provide possibility...

This paper describes the experimental rasult of the flux-grown lithium ferrite single crystal.In this paper the growth condition of single crystal and the result of magnetic- property measurements are also discussed.The measurements show that this material has 4πMs=3835±230G.,Tc=643±5℃,magnetic moment variations≤±7%(in a range ±100°K arround room-temperature),anisotropy field strength=-287Oe,and ferr- omagnetic resonance line width ⊿H=5.8Oe。 The success in making these kinds of Single crystal will provide possibility for constructing the microwave Single crystal devices at higher frequency.

本文阐述以助溶剂缓慢降温法生长纯锂铁氧体单晶的试验结果。文中还对单晶生长条件和磁性能测试结果进行丁讨论。测试结果表明,该材料具有,居里温度T_c=643±5℃,在室温上下各波动100°K时,磁矩变化值≤±7%,各向异性场强=-287Oe,铁磁共振线宽△H=5.8Oe。这类单晶材料的研制成功,将为微波高频段单晶器件的制造创造条件。

 
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