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inp激光器
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  inp lasers
     Deep Levels in (Ga, Al)As/GaAs and GaInAsP/InP Lasers
     (Ga,Al)As/GaAs及GaInAsP/InP激光器中的深能级
短句来源
     1.55μm Wavelength Buried Heterostructure InGaAsP/InP Lasers
     1.55μm掩埋条形InGaAsP/InP激光器
短句来源
     1. 48μm High─Power GaInAsP/InP Lasers
     1.48μm大功率GaInAsP/InP激光器
短句来源
     1.48μm High-power GaInAsP/InP Lasers
     1.48μm大功率GaInAsP/InP激光器
短句来源
     2. Basic difference of degradation modes between GaAlAs/GaAs lasers and InGaAsP/InP lasers;
     GaAlAs/GaAs激光器与InGaAsP/InP激光器退化模式的主要差别;
短句来源
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  inp laser
     AN INVESTIGATION OF DYNAMIC CHARACTERISTIC FOR THE BURIED CRESCENT InGaAsP/InP LASER
     隐埋“月牙”形InGaAsP/InP激光器动态特性研究
短句来源
     Technological study on Al2O3 and ZrO2 antireflection coatings has been carried out on 1.3μm InGaAsP/InP laser diodes(LDs),superluminescent diodes(SLDs)and light emitting diodes(LEDs).
     在1.3μmInGaAsP/InP激光器(LD)、超辐射发光二极管(SLD)和发光二极管(LED)上进行了大量的Al2O3和ZrO2减反射膜的工艺研究。
短句来源
     An Investigation for the steady state characteristics of buried crescent InGaAsP/InP laser
     掩埋弯月形 InGaAsP/InP 激光器稳态特性研究
短句来源
     In this paper, the dynamic characteristic of the buried crescent InGaAsP/Inp laser is analysed by the computer simulation method.
     本文用计算机模拟方法分析了隐埋“月牙”形InGaAsP/InP激光器的动态特性,得到阈值电流,单模截止条件与有源区厚度(中心)d_0、沟宽W、条宽s、腔长L和材料的电阻率R_x等结构参数间的关系。
短句来源
     A high-frequency and high-power InGaAsP/InP laser structure was establishedon the basis of buried crescent lasers by using the proton bombardment technique-theselected proton bombarded the buried crescent laser (SPB-BC).
     在普通掩埋新月型激光器的基础上,提出了一种高频大功率的InGaAsP/InP激光器结构——选择性质子轰击掩埋新月型(SPB-BC),并对激光器结构模型进行了理论分析。
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  “inp激光器”译为未确定词的双语例句
     Be-doped InGaAsP/InP DH Lasers and the Influences of Dopants (Zn, Be) on the Properties of Lasers
     Be掺杂InGaAsP/InP激光器和Zn,Be对其性能的影响
短句来源
     Low Threshold Current High Output Power Fundamental Transverse Mode 1.3μm InGaAsP/InP BH Laser
     1.3微米低阈值大功率基横模BH InGaAsP/InP激光器
短句来源
     CW Operated 1.55μm Proton-bombarded Stripe InGaAsP/InP DH Laser at Room Temperature
     室温连续激射的1.55μm质子轰击条型InGaAsP/InP激光器
短句来源
     The Effect of Nonradiative Recombination on the T_0 Value of 1.3μm InGaAsP/lnP LD
     非辐射复合对1.3μmInGaAsP/Inp激光器T_0的影响
短句来源
     A laser with the large optical cavity (LOC) configuration has beed designed and fabricated taking account of the various factors which have an effect on temperature characteristics of the InGaAsP-InP lasers.
     本文针对影响InGaAsP-InP激光器温度特性的各种因素,设计并制备了大光腔(LOC)结构激光器.
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  inp lasers
It is shown that saturation of the light-current characteristics in pulse operation takes place in the InAlGaAs/InP and InGaAsP/InP lasers as the pump current is increased.
      
Dry etched mesas for buried heterostructure InGaAsP/InP lasers using electron cyclotron resonance Cl2/CH4/H2/Ar discharges
      
Single longitudinal mode, symmetrical three-cavity GaInAsP/InP lasers
      
High-temperature operation of AlGaInAs/InP lasers1994
      
  inp laser
According to this, the laser frequency is tuned by alternating strain in the active region of an InGaAsP/InP laser heterostructure emitting in a wavelength range of 1.3-1.8 μm.
      
Acoustoelectronic interaction in InGaAsP/InP laser heterostructures
      
InGaAsP/InP laser heterostructures in the continuous pumping regime were investigated by autocorrelation methods.
      
Two-photon absorption of 1.55 μm light in quantum-well InGaAs/InP laser heterostructures has been studied.
      
Internal quantum efficiency of stimulated emission of (λ=1.55 μm) InGaAsP/InP laser diodes
      
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A groove large-optical cavity (G-LOC) InGaAsP/InP laser has been fabricated on semi-insulating InP substrate. The fabrication process involves only a single step liquid phase epitaxial growth on a channeled substraote, and is thus simple and reproducible. The device combines the advantages of the groove laser and the LOC structure. In groove laser, the presence of a built-in real index waveguide makes it possible to obtain low-threshold, single mode operation, while the LOC structure posseseg the potential capability...

A groove large-optical cavity (G-LOC) InGaAsP/InP laser has been fabricated on semi-insulating InP substrate. The fabrication process involves only a single step liquid phase epitaxial growth on a channeled substraote, and is thus simple and reproducible. The device combines the advantages of the groove laser and the LOC structure. In groove laser, the presence of a built-in real index waveguide makes it possible to obtain low-threshold, single mode operation, while the LOC structure posseseg the potential capability of delivering high output power. As a result, threshold current as low as 25 mA and an output power of 200 mW per facet have been achieved. The G-LOC Laser can be used as light source in applications such as optical communication and signal process, as well as integrated with other optoelectronic devices.

本文报道在半绝缘铟磷(InP)衬底上制作的槽状大光腔铟镓砷磷/铟磷(InGaAsP/InP)激光器.该结构采用了衬底开槽技术,用一步液相外延工艺来完成,制作简单,重复性好.这种器件将槽状激光器的完全隐埋实折射率导波机制与大光腔结构结合起来,既保持了槽状激光器的低阈值单模运转性能,又能发挥大光腔的高输出潜力.所制成的激光器阈值电流低达25mA,单面脉冲输出功率达200mW,并可实现单模运转.

In this paper, the dynamic characteristic of the buried crescent InGaAsP/Inp laser is analysed by the computer simulation method. The dependences of the threshold current and the single model cut-off condition on the structure parameters such as the active layer thickness (centre) d0, the channel width W, the cavity length L, the stripe width s, and the material resistance Rx are obtained.

本文用计算机模拟方法分析了隐埋“月牙”形InGaAsP/InP激光器的动态特性,得到阈值电流,单模截止条件与有源区厚度(中心)d_0、沟宽W、条宽s、腔长L和材料的电阻率R_x等结构参数间的关系。 在模拟分析的基础上,提供了阈值电流与结构参数间的近似表示式,从中能简捷地估算激光器的物理特性。文内还提出了注入载流子浓度高斯分布模型,应用这模型,可准确地计算电流扩展和增益分布,且导出了最大增益g_(max),阈值电流密度J_(th),模增益G_(th),最佳有源区(中心)厚度d_(0,min),最佳阈值电流密度J_(th,min)等一系列解析式。 基于上述分析,该激光器最佳设计参数为d_0=0.15—0.2μm,W=2—4μm,s=10—15μm,L=200μm。

Be-doped mesa-stripe-geometry InGaAsP/InP DH lasers have been made, The characteristics of these lasers are similar to those of Zn-doped and Cd-doped InGaAsP/InP lasers. The material parameters of Zn-doped and Be-doped lasers have also been studied by measureing the facet reflectivities changed with the external refractive indeces.

首次使用Be作限制层的P型杂质制作了低台形InGaAsP/InP激光器,器件的中心波长为1.3μm。通过测量得到了P型限制层掺Be和zn器件的材料参数。

 
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