投影能带 projected band(6)   projected band      Analys of Projected Band Structure and Electronic States of GaAs(114)A Surface      GaAs(114)A表面投影能带和表面态分析 短句来源      2. We propose a method to construct omnidirectional reflectors withwide band gaps by one dimensional photonic crystals, and the main notion is the direct tailor of the projected band structures.      2．运用传输矩阵法计算了一维光子晶体的能带图及投影能带图，并提出通过对投影能带图直接裁剪的方法，重叠两个以上的一维光子晶体以拓宽一维光子晶体的全方向反射能带的带宽。 短句来源      We presented the surface projected band structure along the high line of surface brillouin zone,the electron properties,such as localization and dispersion of this surface states are discussed.      我们给出了四种半导体材料的表面投影能带结构和与它们相对应的各个表面态 ,讨论了各个表面态沿表面布里渊区高对称线Г Y S X Г的色散关系 . 短句来源      Using the scattering\|theoretic method and employing the second nearest\|neighbor tight\|binding formalism to describe the bulk electronic structure,we calculated the surface electronic structure of InSb(211) A,B surfaces. The surface projected band structures are presented.      采用散射理论的格林函数方法计算了InSb(211)A,B两类表面的电子结构,分别给出了两类表面的表面投影能带结构,分析了各表面态的轨道特性和色散特性; 短句来源      The bulk electronic structure of YBa 2Cu 3O 7 was described by the third-neighbor tight-binding formalism and an analytic scattering theoretical method was used to evaluate the surface electronic structure. The bulk and surface density of states and the surface projected band structure of CuO and CuO 2 terminated surface are calculated. The surface density of states of CuO and CuO 2 are compared with the density of states of bulk.      用近似到第三近邻的紧束缚模型得到了 YBCO的体电子态密度 ,Cu O及 Cu O2 的表面态密度和表面投影能带 ,进而分析了 Cu O和 Cu O2 的表面态密度的特点及与体态密度的差别。 短句来源 更多          “投影能带”译为未确定词的双语例句      Wave vector resolved surface densities of states and band structure along the surface Brillouin zone are presented.      采用层轨道表象及表面投影技术 ,给出了 (313)表面在二维布里渊区高对称点的波矢分辩的电子态密度和表面投影能带结构 . 短句来源      By the method of the formular scattering theory,the electronic structure of InSb(110) relaxed surface is calculated,and the density of surface state,the projected surface band structure of InSb(110) are presented.      利用形式散射理论方法，采用最近邻的紧束缚模型计算了InSb（110）弛豫表面的电子结构，给出了总体、局域、分波态密度和表面投影能带。 短句来源      Wave-vector-resolved surface densities of states and the surface band structure are obtained.      采用层轨道表象及表面投影技术 ,给出了 (31 3)表面在二维布里渊区高对称点的波矢可分辨的电子态密度和表面投影能带结构 . 短句来源   相似匹配句对      Projection of Oriented Object Data Model      面向对象数据模型的投影 短句来源      Projection Displays      投影显示 短句来源      Analys of Projected Band Structure and Electronic States of GaAs(114)A Surface      GaAs(114)A表面投影能带和表面态分析 短句来源      Design of The Energy Band For Heterojunction Bipolar Transistors      异质结双极晶体管的能带设计 短句来源      Calculation of Energy Band of Diamond      金刚石能带的计算 短句来源 查询“投影能带”译词为用户自定义的双语例句     我想查看译文中含有：的双语例句 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。   projected band It is possible to fabricate tubules with direct band gaps away from the Γ point by exploiting the similarities between the projected band structure of graphite and that of the tubule. 例句来源       Modelling indicates that electrons excited in the Si substrate with energies and parallel momenta not allowed in Ag contribute to the surface chemistry after crossing the gap in the projected band structure of Ag(111). 例句来源       In the nonrelativistic case, forbidden gaps appear above and below the Fermi levelin the bulk projected band structure of lead. 例句来源       The gray areas are the projected band structure of the perfect 2D photonic crystal. 例句来源                By the method of the formular scattering theory,the electronic structure of InSb(110) relaxed surface is calculated,and the density of surface state,the projected surface band structure of InSb(110) are presented. Analysising the results,the origination of InSb (110) relaxed surface is also discussed.             利用形式散射理论方法，采用最近邻的紧束缚模型计算了ＩｎＳｂ（１１０）弛豫表面的电子结构，给出了总体、局域、分波态密度和表面投影能带。通过分析其表面态的变化指出了表面发生弛豫的原因主要是阴阳离子的ｐ态电子的相互作用加强所产生的。 文摘来源          Using the sp 3s * energy band model and the method of the formular scattering theory, the electronic structure of InAs(110) relaxed surface has been calculated, the projected surface band structure and the layer density of surface state at M point of InAs(110) have been presented.The reason of the origination of the surface states,the characteristic of the orbital and the change of the surface states upon relaxation discussed.The results are inconcordance with those from experiments and other theo...             采用最近邻的紧束缚的ｓｐ３ｓ模型，利用形式散射理论的格林函数方法，计算了ＩｎＡｓ（１１０）弛豫表面的电子结构，给出了表面投影能带和Ｍ点的层态密度，分析了产生表面态的原因和轨道特性以及驰豫引起表面态的变化，所得结论与实验和其他理论结果相符合． 文摘来源          Using the scattering\|theoretic method and employing the second nearest\|neighbor tight\|binding formalism to describe the bulk electronic structure,we calculated the surface electronic structure of InSb(211) A,B surfaces.The surface projected band structures are presented.The results show that the (211) B surface is more stable than the (211) A surface.Our results are in agreement with the experiments.             采用散射理论的格林函数方法计算了InSb(211)A,B两类表面的电子结构,分别给出了两类表面的表面投影能带结构,分析了各表面态的轨道特性和色散特性;并在此基础上讨论了两类表面的稳定性;计算结果和实验结果定性的相符合. 文摘来源   << 更多相关文摘         相关查询: 投影能带结构 表面投影能带结构 能带 投影 球心投影 投影位移 投影原理 能带弯曲 投影crt 双重投影 投影算子 投影同步  对查询结果不满意

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