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外延生长     
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  epitaxial growth
     EPITAXIAL GROWTH OF La_(1.85)Sr_(0.15)CuO_4,La_2CuO_4,Nd_(1.85)Ce_(0.15)CuO_4 and Pr_2CuO_4 THIN FILMS ON SrTiO_3,LaAlO_3,Y-ZrO_2 SUBSTRATES
     在SrTiO_3、LaAlO_3和Y-ZrO_2衬底上外延生长La_(1.85)Sr_(0.15)CuO_4、La_2CuO_4和Nd_(1.85)Ce_(0.15)CuO_4、Pr_2CuO_4薄膜
短句来源
     Epitaxial growth of Hg_(0.7)Cd_(0.3)Te by laser-assisted deposition
     激光蒸发淀积的Hg_(0.7)Cd_(0.3)Te外延生长
短句来源
     Epitaxial Growth of Er_2O_3 Films by MBE
     电子束外延生长Er_2O_3单晶薄膜
短句来源
     Direct Observation of Epitaxial Growth of YBa_2Cu_3O_(7-δ) Thin Films on SrTiO_3 (001) Vicinal Substrates by Scanning Probe Microscopy
     SrTiO_3斜切基片上外延生长YBa_2Cu_3O_(7-δ)薄膜的扫描探针显微镜研究
短句来源
     Epitaxial Growth of CoSi_2 on Si(100) Substrate by Co/GeSi/Ti/Si Multilayer Solid Phase Reaction
     Co/a-GeSi/Ti/Si多层薄膜固相反应外延生长CoSi_2薄膜
短句来源
更多       
  epitaxy growth
     Solid Source Molecular Beam Epitaxy Growth of InAsP Using As_2 and As_4 Modes
     采用As_2和As_4模式的新型全固源InAsP分子束外延生长
短句来源
     Gas Source Molecular Beam Epitaxy Growth of Ge x Si 1- x /Si Alloys
     气态源分子束外延生长Ge_xSi_(1-x)/Si异质结合金
短句来源
     MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF Ge_xSi_(1-x)/Si STRAINED-LAYER SUPERLATTICES
     Ge_xSi_(1-x)/Si应变层超晶格的分子束外延生长及其特性研究
短句来源
     MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF LUMINESCENT Si_(1-x)Ge_x/Si QUANTUM STRUCTURES
     Si_(1-x)Ge_x/Si量子阱发光材料的分子束外延生长及其结构研究
短句来源
     This dissertation presents the investigation on the epitaxy growth with large lattice mismatch (14%) heterostructures GaN/Al2O3(0001), by an electron cyclotron resonance (ECR) plasma assisted metalorganic chemical vapor deposition (PAMOCVD) with a nitrogen plasma as a nitrogen source at low temperature (700℃) .
     本论文采用电子回旋共振(ECR)微波等离子体辅助金属有机物化学气相沉积(PAMOCVD)方法,以氮等离子体为氮源,研究了大晶格失配(14%)异质结GaN/Al_2O_3(0001)的低温(700℃)外延生长
短句来源
更多       
  epitaxial
     EPITAXIAL GROWTH OF La_(1.85)Sr_(0.15)CuO_4,La_2CuO_4,Nd_(1.85)Ce_(0.15)CuO_4 and Pr_2CuO_4 THIN FILMS ON SrTiO_3,LaAlO_3,Y-ZrO_2 SUBSTRATES
     在SrTiO_3、LaAlO_3和Y-ZrO_2衬底上外延生长La_(1.85)Sr_(0.15)CuO_4、La_2CuO_4和Nd_(1.85)Ce_(0.15)CuO_4、Pr_2CuO_4薄膜
短句来源
     Investigation on interface structure of Ba_(0.7)Sr_(0.3)TiO_3/YBa_2Cu_3O_(7-δ) epitaxial films on (001) SrTiO_3 substrate
     (001)SrTiO_3衬底上的Ba_(0.7)Sr(0.3)TiO_3/YBa_2Cu_3O_(7-δ)外延生长薄膜的界面结构研究
短句来源
     A Epitaxial Technology for Si_(1-x)Ge_x/Si Materials
     Si_(1-x)Ge_x/Si材料外延生长技术
短句来源
     Epitaxial growth of Hg_(0.7)Cd_(0.3)Te by laser-assisted deposition
     激光蒸发淀积的Hg_(0.7)Cd_(0.3)Te外延生长
短句来源
     Epitaxial Growth of Er_2O_3 Films by MBE
     电子束外延生长Er_2O_3单晶薄膜
短句来源
更多       
  epitaxial growing
     Molecular Dynamics Simulation of C_(60) Thin Films Epitaxial Growing on MoS_2
     MoS_2基板上外延生长C_(60)薄膜的分子动力学模拟
短句来源

 

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  epitaxial growth
The influence exerted by parameters of the crystallization process on the epitaxial growth was revealed.
      
Epitaxial growth of rhenium layer electrodeposited from chloride melts onto single-crystal and polycrystalline rhenium substrates with orientations (10-10), (11-20), and (0001) was studied.
      
Conditions for epitaxial growth on single-crystal rhenium foil with orientation (0001) were found.
      
The initial process on the gold cathode is the epitaxial growth of a layer up to 3 μm thick with a smoothed surface and a considerably later growth of grain boundaries.
      
Simulation of epitaxial growth under ion-beam sputtering
      
更多          
  epitaxy growth
A universal fiber-optic pyrometer for the molecular-beam-epitaxy growth module developed in collaboration with JSC Semiconductor Technologies and Equipment is described.
      
Atomic layer molecular beam epitaxy growth of InAs on GaAs substrates
      
Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-z/GaAs with direct band gap up to 2.0?eV
      
In situ optical monitoring of metalorganic vapor phase epitaxy growth of C-doped GaAs
      
Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers
      
更多          
  epitaxial
Ribbon epitaxial substrates made of Ni-Pd and Ni-W-Pd alloys for second-generation high-temperature superconductors
      
An X-ray epitaxial film interferometer as a tool for studying the structure of a semiconductor heterosystem
      
An X-ray epitaxial film interferometer is described that makes it possible to measure the deflections of the atomic planes of a film, which are parallel to the interface, with a sensitivity of several tenth of an angstrom.
      
The device was used for growing epitaxial Si layers with an Er concentration of 5×1018-1021 cm-3.
      
Heavy charged particle detectors based on high-resistivity epitaxial silicon layers
      
更多          
  epitaxial growing
It is expected that the SrxBa1 - xNb2O6 (x = 0.3, 0.5 and 0.7) were highly oriented or epitaxial growing on La doped SrTiO3 (110) single crystal substrate.
      
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