This dissertation presents the investigation on the epitaxy growth with large lattice mismatch (14%) heterostructures GaN/Al2O3(0001), by an electron cyclotron resonance (ECR) plasma assisted metalorganic chemical vapor deposition (PAMOCVD) with a nitrogen plasma as a nitrogen source at low temperature (700℃) .
Epitaxial growth of rhenium layer electrodeposited from chloride melts onto single-crystal and polycrystalline rhenium substrates with orientations (10-10), (11-20), and (0001) was studied.
The initial process on the gold cathode is the epitaxial growth of a layer up to 3 μm thick with a smoothed surface and a considerably later growth of grain boundaries.
A universal fiber-optic pyrometer for the molecular-beam-epitaxy growth module developed in collaboration with JSC Semiconductor Technologies and Equipment is described.
An X-ray epitaxial film interferometer is described that makes it possible to measure the deflections of the atomic planes of a film, which are parallel to the interface, with a sensitivity of several tenth of an angstrom.
It is expected that the SrxBa1 - xNb2O6 (x = 0.3, 0.5 and 0.7) were highly oriented or epitaxial growing on La doped SrTiO3 (110) single crystal substrate.